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K4S560432D-TC1H

Description
16M x 4bit x 4 Banks Synchronous DRAM LVTTL
Categorystorage    storage   
File Size75KB,11 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
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K4S560432D-TC1H Overview

16M x 4bit x 4 Banks Synchronous DRAM LVTTL

K4S560432D-TC1H Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerSAMSUNG
Parts packaging codeTSOP2
package instructionTSOP2, TSOP54,.46,32
Contacts54
Reach Compliance Codecompli
ECCN codeEAR99
access modeFOUR BANK PAGE BURST
Maximum access time6 ns
Other featuresAUTO/SELF REFRESH
Maximum clock frequency (fCLK)100 MHz
I/O typeCOMMON
interleaved burst length1,2,4,8
JESD-30 codeR-PDSO-G54
JESD-609 codee0
length22.22 mm
memory density268435456 bi
Memory IC TypeSYNCHRONOUS DRAM
memory width4
Number of functions1
Number of ports1
Number of terminals54
word count67108864 words
character code64000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize64MX4
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP2
Encapsulate equivalent codeTSOP54,.46,32
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply3.3 V
Certification statusNot Qualified
refresh cycle8192
Maximum seat height1.2 mm
self refreshYES
Continuous burst length1,2,4,8,FP
Maximum standby current0.002 A
Maximum slew rate0.19 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch0.8 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width10.16 mm
K4S560432D
CMOS SDRAM
256Mbit SDRAM
16M x 4bit x 4 Banks
Synchronous DRAM
LVTTL
Revision 0.0
Jan. 2002
* Samsung Electronics reserves the right to change products or specification without notice.
Rev. 0.0 Jan. 2002

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