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934068653315

Description
MOSFET N-CH 20V 0.6A
CategoryDiscrete semiconductor    The transistor   
File Size718KB,15 Pages
ManufacturerNexperia
Websitehttps://www.nexperia.com
Environmental Compliance
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934068653315 Overview

MOSFET N-CH 20V 0.6A

934068653315 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
package instructionCHIP CARRIER, R-PBCC-N3
Reach Compliance Codecompliant
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage20 V
Maximum drain current (ID)0.6 A
Maximum drain-source on-resistance0.62 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PBCC-N3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formCHIP CARRIER
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
GuidelineIEC-60134
surface mountYES
Terminal surfaceTin (Sn)
Terminal formNO LEAD
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
PMZ600UNE
26 June 2014
20 V, N-channel Trench MOSFET
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small
DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2. Features and benefits
Trench MOSFET technology
Leadless ultra small SMD plastic package: 1.0 × 0.6 × 0.48 mm
ElectroStatic Discharge (ESD) protection > 1 kV HBM
Drain-source on-state resistance R
DSon
= 470 mΩ
3. Applications
Relay driver
High-speed line driver
Low-side load switch
Switching circuits
4. Quick reference data
Table 1.
Symbol
V
DS
V
GS
I
D
R
DSon
Quick reference data
Parameter
drain-source voltage
gate-source voltage
drain current
V
GS
= 4.5 V; T
amb
= 25 °C
V
GS
= 4.5 V; I
D
= 0.6 A; T
j
= 25 °C
[1]
Conditions
T
j
= 25 °C
Min
-
-8
-
Typ
-
-
-
Max
20
8
0.6
Unit
V
V
A
Static characteristics
drain-source on-state
resistance
[1]
2
-
470
620
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 1 cm .

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934068653315 PMZ600UNEYL
Description MOSFET N-CH 20V 0.6A MOSFET N-CH 20V 0.6A XQFN3
package instruction CHIP CARRIER, R-PBCC-N3 CHIP CARRIER, R-PBCC-N3
Reach Compliance Code compliant compliant
Shell connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 20 V 20 V
Maximum drain current (ID) 0.6 A 0.6 A
Maximum drain-source on-resistance 0.62 Ω 0.62 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PBCC-N3 R-PBCC-N3
Humidity sensitivity level 1 1
Number of components 1 1
Number of terminals 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form CHIP CARRIER CHIP CARRIER
Peak Reflow Temperature (Celsius) NOT SPECIFIED 260
Polarity/channel type N-CHANNEL N-CHANNEL
Guideline IEC-60134 IEC-60134
surface mount YES YES
Terminal form NO LEAD NO LEAD
Terminal location BOTTOM BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED 30
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
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