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2SD1693M

Description
3A, 70V, NPN, Si, POWER TRANSISTOR, TO-126, TO-126, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size232KB,4 Pages
ManufacturerNEC Electronics
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2SD1693M Overview

3A, 70V, NPN, Si, POWER TRANSISTOR, TO-126, TO-126, 3 PIN

2SD1693M Parametric

Parameter NameAttribute value
MakerNEC Electronics
Parts packaging codeSIP
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknown
Shell connectionCOLLECTOR
Maximum collector current (IC)3 A
Collector-emitter maximum voltage70 V
ConfigurationDARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE)2000
JEDEC-95 codeTO-126
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1
'$7$ 6+((7
6,/,&21 32:(5 75$16,6725
6'
131 6,/,&21 (3,7$;,$/ 75$16,6725
'$5/,1*721 &211(&7,21

)25 /2:)5(48(1&< 32:(5 $03/,),(56
FEATURES
• On-chip Zener diode
• High DC current gain due to Darlington connection
• Large current capacity and low V
CE(sat)
• Large power dissipation TO-126 type power transistor
• Complementary transistor: 2SB1150
PACKAGE DRAWING (UNIT: mm)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
°
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Total power dissipation
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(pulse)
*
P
T
(T
A
= 25°C)
P
T
(T
C
= 25°C)
T
j
T
stg
Ratings
60
±10
60
±10
8.0
±3.0
±5.0
1.3
15
150
−55
to +150
Unit
V
V
V
A
A
W
W
°C
°C
(OHFWURGH &RQQHFWLRQ
* PW
10 ms, duty cycle
50%
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
°
Parameter
Collector to base voltage
Collector to emitter voltage
Collector to emitter voltage
Collector cutoff current
Collector cutoff current
DC current gain
DC current gain
Collector saturation voltage
Base saturation voltage
Turn-on time
Storage time
Fall time
Symbol
V
CBO
V
CEO
V
CEO(SUS)
I
CBO
I
CEO
h
FE1
**
h
FE2
**
V
CE(sat)
**
V
BE(sat)
**
t
on
t
stg
t
f
Conditions
I
C
= 1.0 mA, I
E
= 0
I
C
= 10 mA, R
BE
=
I
C
= 3.0 A, I
B
= 3.0 mA, L = 1.0 mH
V
CB
= 40 V, I
E
= 0
V
CE
= 40 V, R
BE
=
V
CE
= 2.0 V, I
C
= 1.5 A
V
CE
= 2.0 V, I
C
= 3.0 A
I
C
= 1.5 A, I
B
= 1.5 mA
I
C
= 1.5 A, I
B
= 1.5 mA
I
C
= 1.5 A
I
B1
=
−I
B2
= 1.5 mA
R
L
= 27
Ω,
V
CC
40 V
2,000
1,000
0.9
1.5
0.5
2.0
1.0
1.2
2.0
V
V
µ
s
MIN.
50
50
50
10
1.0
20,000
TYP.
60
60
MAX.
70
70
Unit
V
V
V
µ
A
mA
µ
s
µ
s
** Pulse test PW
350
µ
s, duty cycle
2%/per pulsed
h
FE
CLASSIFICATION
Marking
h
FE1
M
2,000 to 5,000
L
4,000 to 12,000
K
3,000 to 20,000
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
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©
2002
1998

2SD1693M Related Products

2SD1693M 2SD1693K
Description 3A, 70V, NPN, Si, POWER TRANSISTOR, TO-126, TO-126, 3 PIN 3A, 70V, NPN, Si, POWER TRANSISTOR, TO-126, TO-126, 3 PIN
Maker NEC Electronics NEC Electronics
Parts packaging code SIP SIP
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Contacts 3 3
Reach Compliance Code unknown unknown
Shell connection COLLECTOR COLLECTOR
Maximum collector current (IC) 3 A 3 A
Collector-emitter maximum voltage 70 V 70 V
Configuration DARLINGTON WITH BUILT-IN DIODE AND RESISTOR DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE) 2000 3000
JEDEC-95 code TO-126 TO-126
JESD-30 code R-PSFM-T3 R-PSFM-T3
JESD-609 code e0 e0
Number of components 1 1
Number of terminals 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Polarity/channel type NPN NPN
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal surface TIN LEAD TIN LEAD
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON

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