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BSP297E6327

Description
Power Field-Effect Transistor, 0.66A I(D), 200V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-4
CategoryDiscrete semiconductor    The transistor   
File Size284KB,8 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
Download Datasheet Parametric View All

BSP297E6327 Overview

Power Field-Effect Transistor, 0.66A I(D), 200V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-4

BSP297E6327 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionPLASTIC PACKAGE-4
Contacts4
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresLOGIC LEVEL COMPATIBLE
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage200 V
Maximum drain current (Abs) (ID)0.66 A
Maximum drain current (ID)0.66 A
Maximum drain-source on-resistance1.8 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G4
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals4
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)1.8 W
Maximum pulsed drain current (IDM)2.64 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
BSP 297
SIPMOS
®
Small-Signal Transistor
• N channel
• Enhancement mode
• Logic Level
• V
GS(th)
= 0.8...2.0V
Pin 1
G
Type
Pin 2
D
Marking
Pin 3
S
Pin 4
D
V
DS
200 V
I
D
0.65 A
R
DS(on)
2
Package
BSP 297
Type
BSP 297
SOT-223
BSP 297
Ordering Code
Q67000-S068
Tape and Reel Information
E6327
Maximum Ratings
Parameter
Symbol
Values
Unit
Drain source voltage
Drain-gate voltage
R
GS
= 20 k
V
DS
V
DGR
200
V
200
V
GS
Gate source voltage
ESD Sensitivity (HBM) as per MIL-STD 883
Continuous drain current
T
A
= 25 ˚C
±
20
Class 1
A
0.65
I
D
DC drain current, pulsed
T
A
= 25 ˚C
I
Dpuls
2.6
P
tot
Power dissipation
T
A
= 25 ˚C
W
1.8
Data Sheet
1
05.99
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