V62C2802096L(L)
Ultra Low Power
256K x 8 CMOS SRAM
Features
• Ultra Low-power consumption
- Active: 35mA at 55ns
- Stand-by: 10
µA
(CMOS input/output)
2
µA
CMOS input/output, L version
• Single +2.2V to 2.7V Power Supply_Typical
• Extented Voltage from 2.2 to 3.6V.
• Equal access and cycle time
• 55/70/85/100 ns access time
• Easy memory expansion with CE1, CE2
and OE inputs
• 1.0V data retention mode
• TTL compatible, Tri-state input/output
• Automatic power-down when deselected
• Package available: 32L TSOP(I)/ STSOP(I)
• 48 Ball CSP_BGA
Functional Description
The V62C2802096L is a low power CMOS Static RAM
organized as 262,144 words by 8 bits. Easy memory exp-
ansion is provided by an active LOW CE1, an active
HIGH CE2, an active LOW OE, and Tri-state I/O’s. This
device has an automatic power-down mode feature when
deselected.
Writing to the device is accomplished by taking Chip
Enable 1 (CE1) with Write Enable (WE) LOW, and Chip
Enable 2 (CE2) HIGH. Reading from the device is per-
formed by taking Chip Enable 1 (CE1) with Output
Enable (OE) LOW while Write Enable (WE) and Chip
Enable 2 (CE2) is HIGH. The I/O pins are placed in a
high-impedance state when the device is deselected: the
outputs are disabled during a write cycle.
TheV62C2802096LL comes with a 1V data retention fe-
ature and Lower Standby Power. The V62C2802096L is
avalable in a 32-pin 8 x 20 mm TSOP1 / STSOP 8x13.4 mm
and CSP type 48-fpBGA packages.
Logic Block Diagram
32-Pin TSOP1 / STSOP
(CSP_BGA See next page)
A
11
A
9
A
8
INPUT BUFFER
ROW DECODER
SENSE AMP
A
0
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
A9
A
13
WE
CE
2
I/O8
Cell Array
A
15
Vcc
A17
A
16
A
14
A
12
A
7
A
6
A
5
A
4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
I/O1
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
OE
A
10
CE1
I/O
8
I/O
7
I/O
6
I/O
5
I/O
4
GND
I/O
3
I/O
2
I/O
1
A
0
A
1
A
2
A
3
COLUMN DECODER
A
10
A
11
A
12
A
13
A
14
A
15
A
16
A
17
CONTROL
CIRCUIT
OE
WE
CE1
CE2
1
REV. 1.1
April
2001 V62C2802096L(L)
V62C2802096L(L)
Absolute Maximum Ratings *
Parameter
Voltage on Any Pin Relative to Gnd
Power Dissipation
Storage Temperature (Plastic)
Temperature Under Bias
Symbol
Vt
P
T
Tstg
Tbias
Minimum
-0.5
−
-55
-40
Maximum
3.6
1.0
+150
+85
Unit
V
W
0
C
0
C
* Note:
Stresses greater than those listed above Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rat-
ing only and functional operation of the device at these or any conditions outside those indicated in the operational sections of this specifica-
tion is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect reliability.
Truth Table
CE1
H
X
L
L
L
CE2
X
L
H
H
H
WE
X
X
H
H
L
OE
X
X
L
H
X
Data
High-Z
High-Z
Data Out
High-Z
Data In
Standby
Standby
Active, Read
Mode
Active, Output Disable
Active, Write
* Key:
X = Don’t Care, L = Low, H = High
Recommended Operating Conditions
(T
A
= 0
0
C to +70
0
C / -40
0
C to 85
0
C
**
)
Parameter
Supply Voltage
Symbol
V
CC
Gnd
V
IH
V
IL
Min
2.2
0.0
2.0
-0.5*
Typ
2.5
0.0
-
-
Max
2.7
0.0
V
CC
+ 0.2
0.6
Unit
V
V
V
V
Input Voltage
*
V
IL
min = -1.0V for pulse width less than t
RC
/2.
**
For Industrial Temperature
3
REV. 1.1
April
2001 V62C2802096L(L)
V62C2802096L(L)
DC Operating Characteristics
(V
cc
= 2.2~2.7V, Gnd = 0V, T
A
= 0
0
C to +70
0
C / -40
0
C to 85
0
C)
Parameter
Input Leakage Current
Output Leakage
Current
Operating Power
Supply Current
Average Operating
Current
Sym
Test Conditions
V
cc
= Max,
V
in
= Gnd to V
cc
CE1 = V
IH
or CE2 = V
IL
V
cc
= Max, V
OUT
= Gnd to V
cc
CE1 = V
IL
, CE2 = V
IH
V
IN
= V
IH
or V
IL
, I
OUT
= 0 mA
CE1 = V
IL
, CE2 = V
IH
I
OUT
= 0mA,
Min Cycle, 100% Duty
CE1 = 0.2V,
CE2 = V
cc
- 0.2V
I
OUT
= 0mA,
-55
-
-
-
-
1
1
3
35
-
-
-
-
-70
1
1
3
30
-
-
-
-
-85
1
1
3
25
-
-
-
-
-100
1
1
3
20
Min Max Min Max Min Max Min Max
Unit
µA
µA
mA
I
I
LI
I
I
LO
I
CC
I
CC1
mA
I
CC2
-
3
-
3
-
3
-
3
mA
Cycle Time=1µs, 100% Duty
Standby Power Supply
Current (TTL Level)
Standby Power Supply
Current (CMOS
Level)
Output Low Voltage
Output High Voltage
I
SB
I
SB1
CE1 = V
IH
or CE2 = V
IL
CE1 > V
cc
- 0.2V or
CE2 < 0.2V, f = 0
V
IN
< 0.2V or
V
IN
> V
cc
- 0.2V
I
OL
= 2 mA
I
OH
= -2 mA
-
0.5
10
2
0.4
-
-
-
-
-
2.0
0.5
10
2
0.4
-
-
-
-
-
2.0
0.5
10
2
0.4
-
-
-
-
-
2.0
0.5
10
2
0.4
-
mA
µA
µA
V
V
L
LL
-
-
-
2.0
V
OL
V
OH
Capacitance
(f = 1MHz, T
A
= 25
0
C)
Parameter*
Symbol
Input Capacitance
I/O Capacitance
Test Condition
V
in
= 0V
V
in
= V
out
= 0V
Max
7
8
Unit
pF
pF
C
in
C
I/O
* This parameter is guaranteed by device characterization and is not production tested.
AC Test Conditions
Input Pulse Level
0.6V to 2.2V
5ns
TTL
Input Rise and Fall Time
Input and Output Timing
Reference Level
C
L
*
1.4V
Output Load Condition
70ns/85 ns
C
L
Figure A.
* Including Scope and Jig Capacitance
= 30pf + 1TTL Load
Load 100ns/120 ns C
L
= 100pf + 1TTL Load
4
REV. 1.1
April
2001 V62C2802096L(L)
V62C2802096L(L)
Read Cycle
(3,9)
(V
cc
= 2.2~2.7V, Gnd = 0V, T
A
= 0
0
C to +70
0
C / -40
0
C to +85
0
C)
Parameter
Read Cycle Time
Address Access Time
Chip Enable Access Time
Output Enable Access Time
Output Hold from Address Change
Chip Enable to Output in Low-Z
Chip Disable to Output in High-Z
Output Enable to Output in Low-Z
Output Disable to Output in High-Z
Power-Up Time
Power-Down Time
Symbol
t
RC
t
AA
t
ACE
t
OE
t
OH
t
CLZ
t
CHZ
t
OLZ
t
OHZ
t
PU
t
PD
55
-
-
-
10
10
-
5
-
0
-
-55
-
55
55
35
-
-
25
-
25
-
55
70
-
-
-
10
10
-
5
-
0
-
-70
-
70
70
40
-
-
30
-
25
-
70
85
-
-
-
10
10
-
5
-
0
-
-85
-
85
85
40
-
-
35
-
30
-
85
-100
100
-
-
-
10
10
-
5
-
0
-
-
100
100
50
-
-
40
-
35
-
100
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Note
Min Max Min Max Min Max Min Max
4,5
4,5
4,5
4,5
5
5
Write Cycle
(3,11)
(V
cc
= 2.2~2.7V, Gnd = 0V, T
A
= 0
0
C to +70
0
C / -40
0
C to +85
0
C)
Parameter
Write Cycle Time
Chip Enable to Write End
Address Setup to Write End
Address Setup Time
Write Pulse Width
Write Recovering Time
Data Valid to Write End
Data Hold Time
Write Enable to Output in High-Z
Output Active from Write End
Symbol
t
WC
t
CW
t
AW
t
AS
t
WP
t
WR
t
DW
t
DH
t
WZ
t
OW
55
45
45
0
45
0
25
0
-
5
-55
-70
-85
-100
Unit
-
-
-
-
-
-
-
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Note
Min Max Min Max Min Max Min Max
-
-
-
-
-
-
-
-
25
-
70
60
60
0
50
0
30
0
-
5
-
-
-
-
-
-
-
-
30
-
85
70
70
0
60
0
35
0
-
5
-
-
-
-
-
-
-
-
35
-
100
80
80
0
70
0
40
0
-
5
40
-
4,5
4,5
5
REV. 1.1
April
2001 V62C2802096L(L)
Domestic Chip Exchange
京公网安备 11010802033920号
EEWORLD
