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HER157

Description
1.5 A, 800 V, SILICON, RECTIFIER DIODE, DO-15
Categorysemiconductor    Discrete semiconductor   
File Size158KB,2 Pages
ManufacturerSHANGHAI SHANGLANG ELECTRONIC TECHNOLOGY CO., LTD.
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HER157 Overview

1.5 A, 800 V, SILICON, RECTIFIER DIODE, DO-15

CE
CHENYI ELECTRONICS
HER151 THRU HER158
HIGH EFFICIENCY RECTIFIER
Reverse Voltage - 50 to 1000 Volts
Forward Current - 1.5Amperes
FEATURES
. Plastic package has Underwrites Laboratory
Flammability Classification 94V-0
. Low forward voltage drop
. High current capability
. High reliability
. Low power loss,high effciency
. High surge current capability
. High speed seitching
. Low leakage
MECHANICAL DATA
.
Case:
JEDEC DO-41 molded plastic body
.
Epoxy:
UL94V-0 rate flame retardant
. Lead:
plated axial leads, solderable per MIL-STD-750, method 2026
.
Polarity:
Color band denotes cathode end
.
Mounting Position:
Any
.
Weight:
0.014 ounce, 0.39 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Ratings at 25
ambient temperature unless otherwise specified,Single phase,half wave 60Hz,resistive or inductive)
load. For capacitive load,derate current by 20%)
HER HER HER HER HER HER HER HER
Symbols 151 152 153 154 155 156 157 158
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Macimum average forward rectified
current 0.375"(9.5mm)lead length at
T
A
=55
Peak forward surge current 8.3ms
sing-wave superimposed on rated load
(JEDEC method)
Maximum instantaneous forward voltage at 2.0 A
Maximum DC Rreverse Current at rated DC
blocking voltage at
T
A
=25
Maximum full load reverse current full cycle
average. 0.375"(9.5mm)lead length at
TL=55
Maximum reverse recovery time(Note 1)
Typical junction Capacitance(Note 2)
Operating and storage temperature range
Trr
50
50
-65 to +150
70
30
I
R
100
V
F
1.0
1.1
5.0
1.7
I
FSM
50.0
V
RRM
V
RMS
V
DC
I
(AV)
50
35
50
100
70
100
200
140
200
300
210
300
1.5
400
280
400
600
420
600
800
560
800
1000
700
1000
Units
Volts
Volts
Volts
Amp
Amps
Volts
A
ns
pF
C
J
T
J
T
STG
Notes:
1.Test conditions:I
F
=0.5A,I
R
=1.0A,Irr=0.25A.
2.Measured at 1MHz and applied reverse voltage of 4.0V Volts
Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD
Page 1 of 2

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