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HER3003

Description
30 A, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size153KB,2 Pages
ManufacturerGood-Ark
Websitehttp://www.goodark.com/
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HER3003 Overview

30 A, SILICON, RECTIFIER DIODE

HER3001 THRU HER3007
HIGH EFFICIENCY RECTIFIER
Reverse Voltage -
50 to 1000 Volts
Forward Current -
3.0 Amperes
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
Low cost
Ultrafast recovery time for high efficiency
Low forward voltage, high current capability
Low leakage
High surge capability
High temperature soldering guaranteed:
250 , 0.375” (9.5mm) lead length for 10 seconds,
5 lbs. (2.3Kg) tension
Mechanical Data
Case:
DO-201AD, molded plastic body over passivated chip
Terminals:
Plated axial leads solderable per
MIL-STD-750, method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:
0.042 ounce, 1.19 grams
DIM ENSIONS
DIM
A
B
C
D
inches
Min.
0.283
0.189
0.048
1.000
Max.
0.374
0.208
0.051
-
Min.
7.20
4.80
1.20
25.40
mm
Max.
9.50
5.30
1.30
-
Note
Maximum Ratings and Electrical Characteristics
Ratings at 25
ambient temperature unless otherwise specified.
Symbols
HER
3001
HER
3002
HER
3003
HER
3004
HER
3005
HER
3006
HER
3007
Units
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375" (9.5mm) lead length at T
A
=55
Peak forward surge current
8.3mS single half sine-wave superimposed
on rated load (MIL-STD-750D 4066 method) at T
A
=55
Maximum instantaneous forward voltage at 3.0A
Maximum DC reverse current
at rated DC blocking voltage
T
A
=25
T
A
=125
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
T
rr
C
J
R
R
JA
JL
50
35
50
100
70
100
200
140
200
400
280
400
3.0
150.0
600
420
600
800
560
800
1000
700
1000
Volts
Volts
Volts
Amps
Amps
1.0
10.0
50.0
50.0
45.0
20.0
8.5
-55 to +150
1.7
Volts
A
Maximum reverse recovery time (Note 1) T
J
=25
Typical junction capacitance (Note 2)
Typical thermal resistance (Note 3)
Operating junction and storage temperature range
100.0
nS
F
/W
T
J
, T
STG
Notes:
(1) Reverse recovery test conditions: I
F
=0.5A, I
R
=1.0A, I
rr
=0.25A
(2) Measured at 1.0MHz and applied reverse voltage of 4.0 volts
(3) Thermal resistance from junction to lead and from junction to ambient with 0.375” (9.5mm) lead length, both leads attached to heatsink
1

HER3003 Related Products

HER3003 HER3004 HER3001 HER3005 HER3002 HER3006 HER3007
Description 30 A, SILICON, RECTIFIER DIODE 30 A, SILICON, RECTIFIER DIODE 30 A, SILICON, RECTIFIER DIODE HIGH EFFICIENCY RECTIFIER 30 A, SILICON, RECTIFIER DIODE HIGH EFFICIENCY RECTIFIER HIGH EFFICIENCY RECTIFIER

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Index Files: 121  1901  1731  1052  1520  3  39  35  22  31 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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