ISL6622IRZ datasheet, PDF - EEWORLD Datasheet

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ISL6622IRZ: DescriptionVR11.1 Compatible Synchronous Rectified Buck MOSFET Drivers; DFN10, SOIC8; Temp Range: See Datasheet; CategoryAnalog mixed-signal IC Drivers and interfaces; File Size621KB，12 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/

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ISL6622IRZ Overview

VR11.1 Compatible Synchronous Rectified Buck MOSFET Drivers; DFN10, SOIC8; Temp Range: See Datasheet

ISL6622IRZ Parametric

Parameter Name	Attribute value
Brand Name	Intersil
Maker	Renesas Electronics Corporation
Parts packaging code	DFN, SOIC
package instruction	HVSON, SOLCC10,.12,20
Contacts	10, 8
Reach Compliance Code	compliant
ECCN code	EAR99
Factory Lead Time	6 weeks
high side driver	YES
Interface integrated circuit type	AND GATE BASED MOSFET DRIVER
JESD-30 code	S-PDSO-N10
JESD-609 code	e3
length	3 mm
Humidity sensitivity level	1
Number of functions	1
Number of terminals	10
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
Nominal output peak current	3 A
Package body material	PLASTIC/EPOXY
encapsulated code	HVSON
Encapsulate equivalent code	SOLCC10,.12,20
Package shape	SQUARE
Package form	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
Peak Reflow Temperature (Celsius)	260
power supply	12 V
Certification status	Not Qualified
Maximum seat height	1 mm
Maximum supply voltage	13.2 V
Minimum supply voltage	6.8 V
Nominal supply voltage	12 V
Supply voltage 1-max	13.2 V
Mains voltage 1-minute	4.75 V
surface mount	YES
Temperature level	INDUSTRIAL
Terminal surface	Matte Tin (Sn) - annealed
Terminal form	NO LEAD
Terminal pitch	0.5 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	30
width	3 mm
Base Number Matches	1

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DATASHEET

ISL6622

VR11.1 Compatible Synchronous Rectified Buck MOSFET Drivers

The ISL6622 is a high frequency MOSFET driver designed to

drive upper and lower power N-Channel MOSFETs in a

synchronous rectified buck converter topology. The advanced

PWM protocol of ISL6622 is specifically designed to work

with Intersil VR11.1 controllers and combined with

N-Channel MOSFETs, form a complete core-voltage regulator

solution for advanced microprocessors. When ISL6622

detects a PSI protocol sent by an Intersil VR11.1 controller, it

activates Diode Emulation (DE) and Gate Voltage

Optimization Technology (GVOT) operation; otherwise, it

operates in normal Continuous Conduction Mode (CCM)

PWM mode.

In the 8 Ld SOIC package, the ISL6622 drives the upper and

lower gates to VCC during normal PWM mode, while the

lower gate drops down to a fixed 5.75V (typically) during PSI

mode. The 10 Ld DFN part offers more flexibility: the upper

gate can be driven from 5V to 12V via the UVCC pin, while the

lower gate has a resistor-selectable drive voltage of 5.75V,

6.75V, and 7.75V (typically) during PSI mode. This provides

the flexibility necessary to optimize applications involving

trade-offs between gate charge and conduction losses.

To further enhance light load efficiency, the ISL6622 enables

diode emulation operation during PSI mode. This allows

Discontinuous Conduction Mode (DCM) by detecting when

the inductor current reaches zero and subsequently turning

off the low side MOSFET to prevent it from sinking current.

An advanced adaptive shoot-through protection is integrated

to prevent both the upper and lower MOSFETs from

conducting simultaneously and to minimize dead time. The

ISL6622 has a 20k integrated high-side gate-to-source

resistor to prevent self turn-on due to high input bus dV/dt.

This driver also has an overvoltage protection feature

operational while VCC is below the POR threshold: the

PHASE node is connected to the gate of the low side

MOSFET (LGATE) via a 10k resistor, limiting the output

voltage of the converter close to the gate threshold of the low

side MOSFET, dependent on the current being shunted,

which provides some protection to the load should the upper

MOSFET(s) become shorted.

FN6470

Rev 2.00

October 30, 2008

Features

• Dual MOSFET Drives for Synchronous Rectified Bridge

• Advanced Adaptive Zero Shoot-through Protection

• Integrated LDO for Selectable Lower Gate Drive Voltage

(5.75V, 6.75V, 7.75V) to Optimize Light Load Efficiency

• 36V Internal Bootstrap Diode

• Advanced PWM Protocol (Patent Pending) to Support PSI

Mode, Diode Emulation, Three-State Operation

• Diode Emulation for Enhanced Light Load Efficiency

• Bootstrap Capacitor Overcharging Prevention

• Supports High Switching Frequency

- 3A Sinking Current Capability

- Fast Rise/Fall Times and Low Propagation Delays

• Integrated High-Side Gate-to-Source Resistor to Prevent

from Self Turn-On due to High Input Bus dV/dt

• Pre-POR Overvoltage Protection for Start-up and

Shutdown

• Power Rails Undervoltage Protection

• Expandable Bottom Copper Pad for Enhanced Heat

Sinking

• Dual Flat No-Lead (DFN) Package

- Near Chip-Scale Package Footprint; Improves PCB

Efficiency and Thinner in Profile

• Pb-Free (RoHS Compliant)

Applications

• High Light Load Efficiency Voltage Regulators

• Core Regulators for Advanced Microprocessors

• High Current DC/DC Converters

• High Frequency and High Efficiency VRM and VRD

Related Literature

• Technical Brief TB363 “Guidelines for Handling and

Processing Moisture Sensitive Surface Mount Devices

(SMDs)”

• Technical Brief TB417 “Designing Stable Compensation

Networks for Single Phase Voltage Mode Buck

Regulators” for Power Train Design, Layout Guidelines,

and Feedback Compensation Design

FN6470 Rev 2.00

October 30, 2008

Page 1 of 12

ISL6622IRZ Related Products

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Description	VR11.1 Compatible Synchronous Rectified Buck MOSFET Drivers; DFN10, SOIC8; Temp Range: See Datasheet	VR11.1 Compatible Synchronous Rectified Buck MOSFET Drivers; DFN10, SOIC8; Temp Range: See Datasheet	VR11.1 Compatible Synchronous Rectified Buck MOSFET Drivers; DFN10, SOIC8; Temp Range: See Datasheet	IC MOSFET DRVR SYNC BUCK 8-SOIC	IC MOSFET DRVR SYNC BUCK 10-DFN
Brand Name	Intersil	Intersil	Intersil	Intersil	Intersil
Maker	Renesas Electronics Corporation	Renesas Electronics Corporation	Renesas Electronics Corporation	Renesas Electronics Corporation	Renesas Electronics Corporation
Parts packaging code	DFN, SOIC	DFN, SOIC	DFN, SOIC	DFN, SOIC	DFN, SOIC
package instruction	HVSON, SOLCC10,.12,20	SOP, SOP8,.25	HVSON, SOLCC10,.12,20	SOP, SOP8,.25	HVSON, SOLCC10,.12,20
Contacts	10, 8	10, 8	10, 8	10, 8	10, 8
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99
Factory Lead Time	6 weeks	8 weeks	6 weeks	7 weeks	6 weeks
high side driver	YES	YES	YES	YES	YES
Interface integrated circuit type	AND GATE BASED MOSFET DRIVER	AND GATE BASED MOSFET DRIVER	AND GATE BASED MOSFET DRIVER	AND GATE BASED MOSFET DRIVER	AND GATE BASED MOSFET DRIVER
JESD-30 code	S-PDSO-N10	R-PDSO-G8	S-PDSO-N10	R-PDSO-G8	S-PDSO-N10
JESD-609 code	e3	e3	e3	e3	e3
length	3 mm	4.9 mm	3 mm	4.9 mm	3 mm
Humidity sensitivity level	1	1	1	3	1
Number of functions	1	1	1	1	1
Number of terminals	10	8	10	8	10
Maximum operating temperature	85 °C	70 °C	70 °C	85 °C	85 °C
Minimum operating temperature	-40 °C	-	-	-40 °C	-40 °C
Nominal output peak current	3 A	3 A	3 A	3 A	3 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	HVSON	SOP	HVSON	SOP	HVSON
Encapsulate equivalent code	SOLCC10,.12,20	SOP8,.25	SOLCC10,.12,20	SOP8,.25	SOLCC10,.12,20
Package shape	SQUARE	RECTANGULAR	SQUARE	RECTANGULAR	SQUARE
Package form	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SMALL OUTLINE	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SMALL OUTLINE	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
Peak Reflow Temperature (Celsius)	260	260	260	260	260
power supply	12 V	12 V	12 V	12 V	12 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	1 mm	1.75 mm	1 mm	1.75 mm	1 mm
Maximum supply voltage	13.2 V	13.2 V	13.2 V	13.2 V	13.2 V
Minimum supply voltage	6.8 V	6.8 V	6.8 V	6.8 V	6.8 V
Nominal supply voltage	12 V	12 V	12 V	12 V	12 V
surface mount	YES	YES	YES	YES	YES
Temperature level	INDUSTRIAL	COMMERCIAL	COMMERCIAL	INDUSTRIAL	INDUSTRIAL
Terminal surface	Matte Tin (Sn) - annealed	Matte Tin (Sn) - annealed	Matte Tin (Sn) - annealed	Matte Tin (Sn) - annealed	Matte Tin (Sn) - annealed
Terminal form	NO LEAD	GULL WING	NO LEAD	GULL WING	NO LEAD
Terminal pitch	0.5 mm	1.27 mm	0.5 mm	1.27 mm	0.5 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	30	30	30	30	30
width	3 mm	3.9 mm	3 mm	3.9 mm	3 mm
Supply voltage 1-max	13.2 V	-	13.2 V	-	13.2 V
Mains voltage 1-minute	4.75 V	-	4.75 V	-	4.75 V
Base Number Matches	1	1	1	-	1

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