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HER307G

Description
3 A, 800 V, SILICON, RECTIFIER DIODE, DO-201AD
Categorysemiconductor    Discrete semiconductor   
File Size65KB,2 Pages
ManufacturerGood-Ark
Websitehttp://www.goodark.com/
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HER307G Overview

3 A, 800 V, SILICON, RECTIFIER DIODE, DO-201AD

HER301G THRU HER308G
HIGH EFFICIENCY GLASS PASSIVATED RECTIFIER
Reverse Voltage -
50 to 1000 Volts
Forward Current -
3.0 Amperes
Features
Low power loss, high efficiency
Low leakage
Low forward voltage drop
High current capability
High speed switching
High reliability
High current surge
Mechanical Data
Case:
Molded plastic
Epoxy:
UL94V-0 rate flame retardant
Lead:
MIL-STD-202E method 208C guaranteed
Mounting Position:
Any
Weight:
0.042 ounce, 1.195 grams
DIM ENSIONS
DIM
A
B
C
D
inches
Min.
0.283
0.189
0.048
1.000
Max.
0.374
0.208
0.051
-
Min.
7.20
4.80
1.20
25.40
mm
Max.
9.50
5.30
1.30
-
Note
Maximum Ratings and Electrical Characteristics
Ratings at 25
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Symbols
HER
301G
HER
302G
HER
303G
HER
304G
HER
305G
HER
306G
HER
307G
HER
308G
Units
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375" (9.5mm) lead length at T
A
=50
Peak forward surge current,
8.3mS single half sine-wave superimposed
on rated load (MIL-STD-750D 4066 method)
Maximum instantaneous forward voltage at 3.0A DC
Maximum full load reverse current average, full cycle
0.375" (9.5mm) lead length at T
L
=55
Maximum DC reverse current
at rated DC blocking voltage
T
A
=25
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R(AV)
I
R
T
rr
C
J
T
J
, T
STG
50
35
50
100
70
100
200
140
200
300
210
300
3.0
400
280
400
600
420
600
800
560
800
1000
700
1000
Volts
Volts
Volts
Amps
200.0
1.0
1.3
150.0
10.0
50.0
70
-65 to +150
1.5
150.0
1.7
Amps
Volts
A
A
Maximum reverse recovery time (Note 1)
Typical junction capacitance (Note 2)
Operating and storage temperature range
Notes:
(1) Test conditions: I
F
=0.5A, I
R
=1.0A, I
rr
=0.25A
(2) Measured at 1.0MHz and applied reverse voltage of 4.0 volts
75.0
50
nS
F
1

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HER307G HER301G HER304G HER305G HER306G HER308G
Description 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-201AD RECTIFIER DIODE 3 A, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 600 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-201AD
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