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S29DS032J80FFI000

Description
Memory Circuit, 32MX1, CMOS, PBGA80, 11 X 9 MM, LEAD FREE, FBGA-80
Categorystorage    storage   
File Size2MB,77 Pages
ManufacturerSPANSION
Websitehttp://www.spansion.com/
Download Datasheet Parametric View All

S29DS032J80FFI000 Overview

Memory Circuit, 32MX1, CMOS, PBGA80, 11 X 9 MM, LEAD FREE, FBGA-80

S29DS032J80FFI000 Parametric

Parameter NameAttribute value
MakerSPANSION
Parts packaging codeBGA
package instructionBGA,
Contacts80
Reach Compliance Codeunknown
JESD-30 codeR-PBGA-B80
memory density33554432 bit
Memory IC TypeMEMORY CIRCUIT
memory width1
Number of functions1
Number of terminals80
word count33554432 words
character code32000000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize32MX1
Package body materialPLASTIC/EPOXY
encapsulated codeBGA
Package shapeRECTANGULAR
Package formGRID ARRAY
Maximum supply voltage (Vsup)1.95 V
Minimum supply voltage (Vsup)1.65 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formBALL
Terminal locationBOTTOM
Base Number Matches1
S29DS032J
32 Megabit, 3.0 Volt-only
DDR Burst Mode Flash Memory
featuring 110 nm Floating Gate Process Technology
Data Sheet
ADVANCE
INFORMATION
Notice to Readers:
The Advance Information status indicates that this
document contains information on one or more products under development
at Spansion LLC. The information is intended to help you evaluate this product.
Do not design in this product without contacting the factory. Spansion LLC
reserves the right to change or discontinue work on this proposed product
without notice.
Publication Number
S29DS032J_00
Revision
A
Amendment
0
Issue Date
June 7, 2006
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