HGT1N40N60A4D
Data Sheet
December 2001
600V, SMPS Series N-Channel IGBT with
Anti-Parallel Hyperfast Diode
The HGT1N40N60A4D is a MOS gated high voltage
switching device combining the best features of a MOSFET
and a bipolar transistor. These devices have the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25
o
C and 150
o
C. This
IGBT is ideal for many high voltage switching applications
operating at high frequencies where low conduction losses
are essential. This device has been optimized for high
frequency switch mode power supplies.
Formerly Developmental Type TA49349.
Features
• 100kHz Operation At 390V, 22A
• 600V Switching SOA Capability
• Typical Fall Time . . . . . . . . . . . . . . . . . 55ns at T
J
= 125
o
C
• Low Conduction Loss
Symbol
C
G
Ordering Information
PART NUMBER
HGT1N40N60A4D
PACKAGE
SOT-227
BRAND
40N60A4D
E
Packaging
JEDEC STYLE SOT-227B
GATE
EMITTER
NOTE: When ordering, use the entire part number.
TAB
(ISOLATED)
COLLECTOR
EMITTER
Fairchild CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
©2001 Fairchild Semiconductor Corporation
HGT1N40N60A4D Rev. B
HGT1N40N60A4D
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Noted
HGT1N40N60A4D
600
110
45
300
±
20
±
30
200A at 600V
298
2.3
2500
-55 to 150
1.5
1.7
UNITS
V
A
A
A
V
V
W
W/
o
C
V
o
C
N-m
N-m
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
CES
Collector Current Continuous
At T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
At T
C
= 110
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
Gate to Emitter Voltage Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GEM
Switching Safe Operating Area at T
J
= 150
o
C, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Power Dissipation Derating T
C
> 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RMS Isolation Voltage, Any Terminal To Case, t = 2s . . . . . . . . . . . . . . . . . . . . . . . . . . .V
ISOL
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Baseplate Screw Torque 4mm Metric Screw Size . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Terminal Screw Torque 4mm Metric Screw Size
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
Electrical Specifications
PARAMETER
T
J
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
CES
I
CES
V
CE(SAT)
V
GE(TH)
I
GES
SSOA
V
GEP
Q
g(ON)
t
d(ON)I
t
rI
t
d(OFF)I
t
fI
E
ON1
E
ON2
E
OFF
t
d(ON)I
t
rI
t
d(OFF)I
t
fI
E
ON1
E
ON2
E
OFF
V
EC
I
EC
= 40A
IGBT and Diode at T
J
= 125
o
C
I
CE
= 40A
V
CE
= 0.65 BV
CES
V
GE
= 15V
R
G
= 2.2
Ω
L = 200
µ
H
Test Circuit (Figure 24)
TEST CONDITIONS
I
C
= 250
µ
A, V
GE
= 0V
V
CE
= BV
CES
I
C
= 40A,
V
GE
= 15V
T
J
= 25
o
C
T
J
= 125
o
C
T
J
= 25
o
C
T
J
= 125
o
C
MIN
600
-
-
-
-
4.5
-
200
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
-
-
-
1.7
1.5
5.6
-
-
8.5
350
450
25
18
145
35
400
850
370
27
20
185
55
400
1220
660
2.25
MAX
-
250
3.0
2.7
2.0
7
±
250
-
-
405
520
-
-
-
-
-
-
-
-
-
225
95
-
1400
775
2.7
UNITS
V
µ
A
mA
V
V
V
nA
A
V
nC
nC
ns
ns
ns
ns
µ
J
µ
J
µ
J
ns
ns
ns
ns
µ
J
µ
J
µ
J
V
Collector to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
Gate to Emitter Plateau Voltage
On-State Gate Charge
I
C
= 250
µ
A, V
CE
= V
GE
V
GE
=
±
20V
T
J
= 150
o
C, R
G
= 2.2
Ω,
V
GE
= 15V
L = 100
µ
H, V
CE
= 600V
I
C
= 40A, V
CE
= 0.5 BV
CES
I
C
= 40A,
V
CE
= 0.5 BV
CES
V
GE
= 15V
V
GE
= 20V
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 3)
Turn-On Energy (Note 3)
Turn-Off Energy (Note 2)
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note3)
Turn-On Energy (Note 3)
Turn-Off Energy (Note 2)
Diode Forward Voltage
IGBT and Diode at T
J
= 25
o
C
I
CE
= 40A
V
CE
= 0.65 BV
CES
V
GE
=15V
R
G
= 2.2
Ω
L = 200
µ
H
Test Circuit (Figure 24)
©2001 Fairchild Semiconductor Corporation
HGT1N40N60A4D Rev. B
HGT1N40N60A4D
Electrical Specifications
PARAMETER
Diode Reverse Recovery Time
Thermal Resistance Junction To Case
T
J
= 25
o
C, Unless Otherwise Specified
(Continued)
SYMBOL
t
rr
R
θ
JC
TEST CONDITIONS
I
EC
= 40A, dI
EC
/dt = 200A/
µ
s
IGBT
Diode
NOTES:
2. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I
CE
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
3. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
ON1
is the turn-on loss of the IGBT only. E
ON2
is the
turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
J
as the IGBT. The diode type is specified in Figure 20.
MIN
-
-
-
TYP
48
-
-
MAX
55
0.42
1.8
UNITS
ns
o
C/W
o
C/W
Typical Performance Curves
120
(Unless Otherwise Specified)
225
200
175
150
125
100
75
50
25
0
0
100
200
300
400
500
600
700
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
V
GE
= 15V
I
CE
, DC COLLECTOR CURRENT (A)
100
T
J
= 150
o
C
T
J
= 150
o
C, R
G
= 2.2Ω, V
GE
= 15V, L = 100µH
80
60
40
20
0
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (
o
C)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
300
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
t
SC
, SHORT CIRCUIT WITHSTAND TIME (ms)
T
C
f
MAX
, OPERATING FREQUENCY (kHz)
75
o
C
V
GE
15V
V
CE
= 390V, R
G
= 2.2Ω, T
J
= 125
o
C
10
I
SC
8
100
1000
800
f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
f
MAX2
= (P
D
- P
C
) / (E
ON2
+ E
OFF
)
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
R
ØJC
= 0.42
o
C/W, SEE NOTES
10
1
10
20
100
6
t
SC
4
600
400
2
10
11
12
13
14
15
16
V
GE
, GATE TO EMITTER VOLTAGE (V)
200
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
©2001 Fairchild Semiconductor Corporation
HGT1N40N60A4D Rev. B
I
SC
, PEAK SHORT CIRCUIT CURRENT (A)
12
1200
HGT1N40N60A4D
Typical Performance Curves
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
80
70
60
50
40
30
20
T
J
= 150
o
C
10
0
0
0.25
0.5
0.75
1.0
1.25
1.5
1.75
2.0
2.25
2.5
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
T
J
= 25
o
C
T
J
= 125
o
C
DUTY CYCLE < 0.5%, V
GE
= 12V
PULSE DURATION = 250ms
(Unless Otherwise Specified)
(Continued)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
80
70
60
50
40
30
20
10
0
0
0.25
0.5
0.75
1.0
1.25
1.5
1.75
2.0
2.25
2.5
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
T
J
= 150
o
C
T
J
= 25
o
C
T
J
= 125
o
C
DUTY CYCLE < 0.5%, V
GE
= 15V
PULSE DURATION = 250ms
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
5500
E
ON2
, TURN-ON ENERGY LOSS (mJ)
5000
4500
4000
3500
3000
2500
2000
1500
1000
500
0
0
E
OFF
, TURN-OFF ENERGY LOSS (mJ)
R
G
= 2.2Ω, L = 200mH, V
CE
= 390V
1800
1600
1400
1200
1000
800
600
400
200
0
0
10
20
30
T
J
= 25
o
C, V
GE
= 12V OR 15V
40
50
60
70
80
T
J
= 125
o
C, V
GE
= 12V OR 15V
R
G
= 2.2Ω, L = 200mH, V
CE
= 390V
T
J
= 125
o
C, V
GE
= 12V, V
GE
= 15V
T
J
= 25
o
C, V
GE
= 12V, V
GE
= 15V
10
20
30
40
50
60
70
80
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
42
t
d(ON)I
, TURN-ON DELAY TIME (ns)
40
38
36
34
32
30
28
26
24
22
0
R
G
= 2.2Ω, L = 200mH, V
CE
= 390V
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 15V
t
rI
, RISE TIME (ns)
120
100
80
60
40
20
R
G
= 2.2Ω, L = 200mH, V
CE
= 390V
T
J
= 125
o
C, T
J
= 25
o
C, V
GE
= 12V
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 15V
10
20
30
40
50
60
70
80
0
0
10
20
30
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 15V
40
50
60
70
80
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
©2001 Fairchild Semiconductor Corporation
HGT1N40N60A4D Rev. B
HGT1N40N60A4D
Typical Performance Curves
190
t
d(OFF)I
, TURN-OFF DELAY TIME (ns)
180
170
V
GE
= 12V, V
GE
= 15V, T
J
= 125
o
C
160
150
V
GE
= 12V or 15V, T
J
= 25
o
C
140
R
G
= 2.2Ω, L = 200mH, V
CE
= 390V
130
30
0
10
20
30
40
50
60
70
80
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
0
10
20
30
40
50
60
70
80
t
fI
, FALL TIME (ns)
(Unless Otherwise Specified)
(Continued)
70
65
60
55
50
45
40
35
R
G
= 2.2Ω, L = 200mH, V
CE
= 390V
T
J
= 125
o
C, V
GE
= 12V OR 15V
T
J
= 25
o
C, V
GE
= 12V OR 15V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
400
350
300
250
200
150
100
50
0
6
7
8
9
10
11
V
GE
, GATE TO EMITTER VOLTAGE (V)
T
J
= -55
o
C
T
J
= 25
o
C
V
GE
, GATE TO EMITTER VOLTAGE (V)
DUTY CYCLE < 0.5%, V
CE
= 10V
PULSE DURATION = 250ms
16
14
12
10
8
6
4
2
0
0
I
G(REF)
= 1mA, R
L
= 7.5Ω, T
C
= 25
o
C
V
CE
= 600V
V
CE
= 400V
T
J
= 125
o
C
V
CE
= 200V
50
100
150
200
250
300
350
400
Q
G
, GATE CHARGE (nC)
FIGURE 13. TRANSFER CHARACTERISTIC
E
TOTAL
, TOTAL SWITCHING ENERGY LOSS (mJ)
E
TOTAL
, TOTAL SWITCHING ENERGY LOSS (mJ)
5
T
J
= 125
o
C, V
CE
= 390V, V
GE
= 15V
E
TOTAL
= E
ON2
+E
OFF
4
I
CE
= 80A
70
FIGURE 14. GATE CHARGE WAVEFORMS
T
J
= 125
o
C, V
CE
= 390V, V
GE
= 15V
E
TOTAL
= E
ON2
+E
OFF
10
I
CE
= 80A
I
CE
= 40A
1
I
CE
= 20A
3
2
I
CE
= 40A
1
I
CE
= 20A
0
25
50
75
100
125
150
0.1
1
10
100
500
T
C
, CASE TEMPERATURE (
o
C)
R
G
, GATE RESISTANCE (Ω)
FIGURE 15. TOTAL SWITCHING LOSS vs CASE TEMPERATURE
FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE
©2001 Fairchild Semiconductor Corporation
HGT1N40N60A4D Rev. B
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