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HGTD6N50E1

Description
7.5 A, 500 V, N-CHANNEL IGBT, TO-251AA
Categorysemiconductor    Discrete semiconductor   
File Size34KB,4 Pages
ManufacturerIntersil ( Renesas )
Websitehttp://www.intersil.com/cda/home/
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HGTD6N50E1 Overview

7.5 A, 500 V, N-CHANNEL IGBT, TO-251AA

HGTD6N40E1, HGTD6N40E1S,
HGTD6N50E1, HGTD6N50E1S
March 1997
6A, 400V and 500V N-Channel IGBTs
Packages
HGTD6N40E1, HGTD6N50E1
JEDEC TO-251AA
EMITTER
COLLECTOR
GATE
COLLECTOR
(FLANGE)
Features
• 6A, 400V and 500V
• V
CE(ON)
: 2.5V Max.
• T
FALL
: 1.0µs
• Low On-State Voltage
• Fast Switching Speeds
• High Input Impedance
Applications
• Power Supplies
• Motor Drives
• Protective Circuits
HGTD6N40E1S, HGTD6N50E1S
JEDEC TO-252AA
COLLECTOR
(FLANGE)
GATE
EMITTER
Description
The HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, and
HGTD6N50E1S are n-channel enhancement-mode insulated
gate bipolar transistors (IGBTs) designed for high voltage, low
on-dissipation applications such as switching regulators and
motor drivers. These types can be operated directly from low
power integrated circuits.
PACKAGING AVAILABILITY
PART NUMBER
HGTD6N40E1
HGTD6N50E1
HGTD6N40E1S
HGTD6N50E1S
PACKAGE
TO-251AA
TO-251AA
TO-252AA
TO-252AA
BRAND
G6N40E
G6N50E
G6N40E
G6N50E
E
G
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
C
NOTE: When ordering, use the entire part number.
Absolute Maximum Ratings
T
C
= +25
o
C, Unless Otherwise Specified
HGTD6N40E1
HGTD6N40E1S
400
400
±20
7.5
6.0
60
0.48
-55 to +150
HGTD6N50E1
HGTD6N50E1S
500
500
±20
7.5
6.0
60
0.48
-55 to +150
UNITS
V
V
V
A
A
W
W/
o
C
o
C
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
CES
Collector-Gate Voltage R
GE
= 1MΩ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
CGR
Gate-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GE
Collector Current Continuous at T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
at T
C
= +90
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C90
Power Dissipation Total at T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Power Dissipation Derating T
C
> +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
INTERSIL CORPORATION’S PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,587,713
4,641,162
4,794,432
4,860,080
4,969,027
4,417,385
4,598,461
4,644,637
4,801,986
4,883,767
4,430,792
4,605,948
4,682,195
4,803,533
4,888,627
4,443,931
4,618,872
4,684,413
4,809,045
4,890,143
4,466,176
4,620,211
4,694,313
4,809,047
4,901,127
4,516,143
4,631,564
4,717,679
4,810,665
4,904,609
4,532,534
4,639,754
4,743,952
4,823,176
4,933,740
4,567,641
4,639,762
4,783,690
4,837,606
4,963,951
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
www.intersil.com or 407-727-9207
|
Copyright
©
Intersil Corporation 1999
File Number
2413.4
1970

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