RM45N600T7(T2)
P
OWER
F
IELD
E
FFECT
T
RANSISTOR
GENERAL DESCRIPTION
This high voltage MOSFET uses an advanced termination
scheme to provide enhanced voltage-blocking capability
without degrading performance over time. In addition, this
advanced MOSFET is designed to withstand high energy in
avalanche and commutation modes. The new energy
efficient design also offers a drain-to-source diode with a fast
recovery time. Designed for high voltage, high speed
switching applications in power supplies, converters and
PWM motor controls, these devices are particularly well
suited for bridge circuits where diode speed and
commutating safe operating areas are critical and offer
additional and safety margin against unexpected voltage
transients.
SYMBOL
PIN CONFIGURATION
Top View
Top View
FEATURES
SOURCE
Avalanche Energy Specified
Source-to-Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
I
DSS
and V
DS
(on) Specified at Elevated Temperature
Isolated Mounting Hole Reduces Mounting Hardware
GATE
DRAIN
GATE
1
2
3
1
2
DRAIN
Robust High Voltage Termination
3
ABSOLUTE MAXIMUM RATINGS
Rating
Drain to Current
Continuous
Pulsed
Gate-to-Source Voltage
Continue
TO-220
RM45N600T2
Symbol
I
D 25C(1)
I
D 100C(1)
I
DM
V
GS
TO-247
RM45N600T7
Value
44.5
28.2
135
±30
50
431
0.40
3.45
-55 to 150
809
2.5
0.29
62.5
40
260
2018-12/71
REV:O
Unit
A
V
W
W/
Total Power Dissipation TO-220
TO-247
Derate above 25
TO-220
TO-247
P
D
Junction and Storage Temperature Range
Single Pulse Drain-to-Source Avalanche Energy
T
J
= 25
(V
DD
= 100V, V
GS
= 10V, I
L
= 12A, L = 10mH, R
G
= 25Ω)
Thermal Resistance
Junction to Case
Junction to Case
TO-220
TO-247
T
J
, T
STG
E
AS
Rθ
JC
Rθ
JA
T
L
SOURCE
mJ
/W
Junction to Ambient TO-220
Junction to Ambient TO-247
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, T
J
= 25 .
Characteristic
Drain-Source Breakdown Voltage
(V
GS
= 0 V, I
D
= 250 A)
Symbol
V
(BR)DSS
Min
600
Typ
Max
Units
V
Drain-Source Leakage Current
(V
DS
=600 V, V
GS
= 0 V)
Gate-Source Leakage Current-Forward
(V
gsf
= 30 V, V
DS
= 0 V)
Gate-Source Leakage Current-Reverse
(V
gsr
= - 30 V, V
DS
= 0 V)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 250 A)
Static Drain-Source On-Resistance (V
GS
= 10 V, I
D
= 15.6A) *
I
DSS
I
GSSF
I
GSSR
V
GS(th)
R
DS(on)
10
100
100
2
3
75
3.6
2808
125
37
37
106
95
93
69
18
30
1.5
**
170
uA
nA
nA
V
mΩ
4
90
Gate resistance (f=1MHz, open drain)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Forward On-Voltage(1)
Forward Turn-On Time
Reverse Recovery Time
VDD=480V, ID=45A, VGS=10V
(V
DD
= 300 V, I
D
= 45 A,
R
G
= 4.7Ω) *
(V
DS
= 100 V, V
GS
= 0 V,
f = 1.0 MHz)
R
G
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
SOURCE-DRAIN DIODE CHARACTERISTICS
V
SD
(I
S
= 45 A,
t
on
d
IS
/d
t
= 100A/μs)
t
rr
2%
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
ns
* Pulse Test: Pulse Width 300μs, Duty Cycle
** Negligible, Dominated by circuit inductance
Embedded System
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