BUK7616-55A datasheet, PDF - EEWORLD Datasheet

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BUK7616-55A: DescriptionTRANSISTOR 65.7 A, 55 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3, FET General Purpose Power; CategoryDiscrete semiconductor The transistor; File Size215KB，13 Pages; ManufacturerNXP; Websitehttps://www.nxp.com; Environmental Compliance

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BUK7616-55A Overview

TRANSISTOR 65.7 A, 55 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3, FET General Purpose Power

BUK7616-55A Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
package instruction	PLASTIC, D2PAK-3
Contacts	3
Reach Compliance Code	not_compliant
ECCN code	EAR99
Avalanche Energy Efficiency Rating (Eas)	120 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	55 V
Maximum drain current (Abs) (ID)	65.7 A
Maximum drain current (ID)	65.7 A
Maximum drain-source on-resistance	0.016 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G2
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	138 W
Maximum pulsed drain current (IDM)	263 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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BUK7516-55A

N-channel TrenchMOS standard level FET

Rev. 02 — 26 January 2011

Product data sheet

1. Product profile

1.1 General description

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using TrenchMOS technology. This product has been designed and qualified to

the appropriate AEC standard for use in automotive critical applications.

1.2 Features and benefits



AEC Q101 compliant



Low conduction losses due to low

on-state resistance



Suitable for standard level gate drive

sources



Suitable for thermally demanding

environments due to 175 °C rating

1.3 Applications



12 V and 24 V loads



Automotive and general purpose

power switching



Motors, lamps and solenoids

1.4 Quick reference data

Table 1.

Symbol

tot

Quick reference data

Parameter

drain-source

voltage

drain current

total power

dissipation

drain-source

on-state

resistance

Conditions

≥

25 °C; T

≤

175 °C

= 10 V; T

= 25 °C;

see

Figure 1;

see

Figure 3

= 25 °C; see

Figure 2

Min

Typ

Max Unit

65.7 A

138

Static characteristics

DSon

= 10 V; I

= 25 A;

= 175 °C; see

Figure 12;

see

Figure 13

= 10 V; I

= 25 A;

= 25 °C; see

Figure 12;

see

Figure 13

Avalanche ruggedness

DS(AL)S

non-repetitive

= 49 A; V

sup

≤

55 V;

drain-source

= 50

Ω;

= 10 V;

avalanche energy T

j(init)

= 25 °C; unclamped

120

mΩ

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