ISP817X,
ISP817
HIGH DENSITY MOUNTING
PHOTOTRANSISTOR
OPTICALLY COUPLED ISOLATORS
APPROVALS
UL recognised, File No. E91231 under
Package System 'EE'
'X' SPECIFICATION APPROVALS
VDE 0884 in 3 available lead form : -
- STD
- G form
- SMD approved to CECC 00802
DESCRIPTION
The ISP817 series of optically coupled isolators
consist of infrared light emitting diodes and NPN
silicon photo transistors in space efficient dual in
line plastic packages.
FEATURES
Options :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
High Current Transfer Ratio (50% min)
High Isolation Voltage (5.3kV
RMS
,7.5kV
PK
)
High BV
CEO
( 80Vmin )
All electrical parameters 100% tested
Custom electrical selections available
APPLICATIONS
Computer terminals
Industrial systems controllers
Measuring instruments
Signal transmission between systems of
different potentials and impedances
ISP817X
ISP817
2.54
7.0
6.0
1.2
5.08
4.08
4.0
3.0
0.5
0.5
3.35
1
2
Dimensions in mm
4
3
7.62
13°
Max
3.0
0.26
SURFACE MOUNT
OPTION SM
OPTION G
7.62
10.46
9.86
0.6
0.1
1.25
0.75
0.26
10.16
ISOCOMCOMPONENTSLTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1UD
Tel: (01429) 863609 Fax :(01429) 863581
16/2/11
DB92275
ABSOLUTEMAXIMUMRATINGS
(25°C unless otherwise specified)
Storage Temperature
-55°C to +125°C
Operating Temperature
-30°C to +100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUTDIODE
Forward Current
Reverse Voltage
Power Dissipation
OUTPUT TRANSISTOR
Collector-emitter Voltage BV
CEO
Emitter-collector Voltage BV
ECO
Collector Current
Power Dissipation
POWER DISSIPATION
Total Power Dissipation
200mW
80V
6V
50mA
150mW
50mA
6V
70mW
(derate linearly 2.67mW/°C above 25°C)
ELECTRICAL CHARACTERISTICS ( T
A
= 25°C Unless otherwise noted )
PARAMETER
Input
Forward Voltage (V
F
)
Reverse Current (I
R
)
Output
Collector-emitter Breakdown (BV
CEO
) 80
Emitter-collector Breakdown (BV
ECO
) 6
Collector-emitter Dark Current (I
CEO
)
Current Transfer Ratio (CTR) (Note 2)
GB
BL
A
B
C
D
Collector-emitter Saturation VoltageV
CE (SAT)
Input to Output Isolation Voltage V
ISO
50
100
200
80
130
200
300
600
600
600
160
260
400
600
0.2
%
%
%
%
%
%
%
V
V
RMS
7500
Input-output Isolation Resistance R
ISO
5x10
10
Output Rise Time tr
4
Output Fall Time tf
3
Note 1
Note 2
PK
MIN TYP MAX UNITS
1.2
1.4
10
V
μA
V
V
nA
TEST CONDITION
I
F
= 20mA
V
R
= 4V
I
C
= 1mA
I
E
= 100μA
V
CE
= 20V
5mA I
F
, 5V V
CE
5mA I
F
, 5V V
CE
5mA I
F
, 5V V
CE
5mA I
F
, 5V V
CE
5mA I
F
, 5V V
CE
5mA I
F
, 5V V
CE
5mA I
F
, 5V V
CE
20mA I
F
, 1mA I
C
See note 1
See note 1
V
IO
= 500V (note 1)
V
CE
= 2V ,
I
C
= 2mA, R
L
= 100Ω
100
Coupled
5300
18
18
Ω
μs
μs
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory.
16/2/11
DB92275
Collector Power Dissipation vs. Ambient Temperature
200
Collector power dissipation P
C
(mW)
Collector-emitter saturation voltage V
CE(SAT)
(V)
Collector-emitter Saturation
Voltage vs. Forward Current
=1mA
3mA
5mA
10mA
6
5
4
3
2
1
0
15mA
150
100
50
0
-30
0
25
50
75
100
125
Ambient temperature T
A
( °C )
Forward Current vs. Ambient Temperature
60
0
Ic
T
A
= 25°C
5
10
15
Forward current I
F
(mA)
Collector Current vs. Collector-emitter Voltage
50
50mA
30mA
Collector current I
C
(mA)
T
A
= 25°C
50
Forward current I
F
(mA)
40
30
20
10
0
20mA
15mA
10mA
40
30
20
10
0
-30
0
25
50
75
100
125
Ambient temperature T
A
( °C )
Collector-emitter Saturation
Voltage vs. Ambient Temperature
0.14
I
F
= 20mA
I
C
= 1mA
0.12
0.10
0.08
0.06
0.04
0.02
0
-30
0
25
50
75
100
Ambient temperature T
A
( °C )
I
F
= 5mA
0
2
4
6
8
10
Collector-emitter voltage V
CE
( V )
Current Transfer Ratio vs. Forward Current
320
Current transfer ratio CTR (%)
Collector-emitter saturation voltage V
CE(SAT)
(V)
280
240
200
160
120
80
40
0
1
2
5
10
20
50
Forward current I
F
(mA)
DB92275
V
CE
= 5V
T
A
= 25°C
16/2/11
京公网安备 11010802033920号
EEWORLD
