CLY32-00ES datasheet, PDF - EEWORLD Datasheet

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CLY32-00ES: DescriptionRF Small Signal Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, HERMETIC SEALED, MWP-25, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size583KB，9 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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CLY32-00ES Overview

RF Small Signal Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, HERMETIC SEALED, MWP-25, 3 PIN

CLY32-00ES Parametric

Parameter Name	Attribute value
Maker	Infineon
package instruction	FLANGE MOUNT, R-CDFM-F2
Contacts	3
Reach Compliance Code	compliant
ECCN code	EAR99
Shell connection	SOURCE
Configuration	SINGLE
Minimum drain-source breakdown voltage	14 V
Maximum drain current (Abs) (ID)	1.4 A
Maximum drain current (ID)	1.4 A
FET technology	METAL SEMICONDUCTOR
highest frequency band	C BAND
JESD-30 code	R-CDFM-F2
JESD-609 code	e3
Number of components	1
Number of terminals	2
Operating mode	DEPLETION MODE
Maximum operating temperature	175 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	6.75 W
Minimum power gain (Gp)	11 dB
Certification status	Not Qualified
Guideline	ESA/SCC 5614/006
surface mount	YES
Terminal surface	MATTE TIN
Terminal form	FLAT
Terminal location	DUAL
transistor applications	AMPLIFIER
Transistor component materials	GALLIUM ARSENIDE
Base Number Matches	1

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CLY32

HiRel

C-Band GaAs Power-MESFET

•

HiRel

Discrete and Microwave Semiconductor

For professional power amplifiers

For frequencies from 100 MHz to 6 GHz

Hermetically sealed microwave power package

Low thermal resistance for

high voltage application

Power added efficiency > 53 %

Space Qualified

ESA/SCC Detail Spec. No.: 5614/006,

Type Variant No.s 01 to 03

ESD: Electrostatic discharge

sensitive device, observe handling precautions!

Type

Marking

Ordering Code

Pin Configuration

Package

CLY32-00 (ql)

CLY32-05 (ql)

CLY32-10 (ql)

see below

MWP-25

CLY32-nn: specifies output power level (see electrical characteristics)

(ql) Quality Level:

P: Professional Quality,

H: High Rel Quality,

S: Space Quality,

ES: ESA Space Quality,

Ordering Code:

Q62702L100

on request

Q62702L120

(see order instructions for ordering example)

Semiconductor Group

1 of 10

Draft D, September 99

CLY32-00ES Related Products

	CLY32-00ES	CLY32-05H	CLY32-00S	CLY32-10P	CLY32-10S
Description	RF Small Signal Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, HERMETIC SEALED, MWP-25, 3 PIN	RF Small Signal Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, HERMETIC SEALED, MWP-25, 3 PIN	RF Small Signal Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, HERMETIC SEALED, MWP-25, 3 PIN	RF Small Signal Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, HERMETIC SEALED, MWP-25, 3 PIN	RF Small Signal Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, HERMETIC SEALED, MWP-25, 3 PIN
Maker	Infineon	Infineon	Infineon	Infineon	Infineon
package instruction	FLANGE MOUNT, R-CDFM-F2	FLANGE MOUNT, R-CDFM-F2	FLANGE MOUNT, R-CDFM-F2	FLANGE MOUNT, R-CDFM-F2	FLANGE MOUNT, R-CDFM-F2
Contacts	3	3	3	3	3
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99
Shell connection	SOURCE	SOURCE	SOURCE	SOURCE	SOURCE
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum drain-source breakdown voltage	14 V	14 V	14 V	14 V	14 V
Maximum drain current (Abs) (ID)	1.4 A	1.4 A	1.4 A	1.4 A	1.4 A
Maximum drain current (ID)	1.4 A	1.4 A	1.4 A	1.4 A	1.4 A
FET technology	METAL SEMICONDUCTOR	METAL SEMICONDUCTOR	METAL SEMICONDUCTOR	METAL SEMICONDUCTOR	METAL SEMICONDUCTOR
highest frequency band	C BAND	C BAND	C BAND	C BAND	C BAND
JESD-30 code	R-CDFM-F2	R-CDFM-F2	R-CDFM-F2	R-CDFM-F2	R-CDFM-F2
JESD-609 code	e3	e3	e3	e3	e3
Number of components	1	1	1	1	1
Number of terminals	2	2	2	2	2
Operating mode	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE
Maximum operating temperature	175 °C	175 °C	175 °C	175 °C	175 °C
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power consumption environment	6.75 W	6.75 W	6.75 W	6.75 W	6.75 W
Minimum power gain (Gp)	11 dB	11.5 dB	11 dB	11.5 dB	11.5 dB
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Guideline	ESA/SCC 5614/006	ESA/SCC 5614/006	ESA/SCC 5614/006	ESA/SCC 5614/006	ESA/SCC 5614/006
surface mount	YES	YES	YES	YES	YES
Terminal surface	MATTE TIN	MATTE TIN	MATTE TIN	MATTE TIN	MATTE TIN
Terminal form	FLAT	FLAT	FLAT	FLAT	FLAT
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	GALLIUM ARSENIDE	GALLIUM ARSENIDE	GALLIUM ARSENIDE	GALLIUM ARSENIDE	GALLIUM ARSENIDE
Base Number Matches	1	1	1	1	1

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