IR210DG12HCBPBF datasheet, PDF

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IR210DG12HCBPBF: DescriptionRectifier Diode, 1 Phase, 1 Element, 1200V V(RRM), Silicon, WAFER; CategoryDiscrete semiconductor diode; File Size241KB，3 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/; Environmental Compliance

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IR210DG12HCBPBF Overview

Rectifier Diode, 1 Phase, 1 Element, 1200V V(RRM), Silicon, WAFER

IR210DG12HCBPBF Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	International Rectifier （ Infineon ）
Parts packaging code	WAFER
package instruction	O-XUUC-N
Reach Compliance Code	compliant
ECCN code	EAR99
application	HIGH POWER
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JESD-30 code	O-XUUC-N
Number of components	1
Phase	1
Number of terminals	1
Package body material	UNSPECIFIED
Package shape	ROUND
Package form	UNCASED CHIP
Peak Reflow Temperature (Celsius)	260
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	1200 V
surface mount	YES
Terminal form	NO LEAD
Terminal location	UPPER
Maximum time at peak reflow temperature	40
Base Number Matches	1

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Bulletin I0133J 05/99

IR210DG..HCB SERIES

HIGH POWER RECTIFIER DIODES

Junction Size:

Wafer Size:

RRM

Class:

Passivation Process:

Square 210 mils

600 and 1200 V

Glassivated MESA

Reference IR Packaged Part:

40HF Series

Major Ratings and Characteristics

Parameters

RRM

Maximum Forward Voltage

Reverse Breakdown Voltage Range

Units

1000 mV

600 and 1200 V

Test Conditions

= 25°C I

= 25A

= 25°C I

= 100µA

(1)

Nitrogen flow on die edge.

Mechanical Characteristics

Nominal Back Metal Composition, Thickness

Nominal Front Metal Composition, Thickness

Chip Dimensions

Wafer Diameter

Wafer Thickness

Maximum Width of Sawing Line

Reject Ink Dot Size

Ink Dot Location

Recommended Storage Environment

Cr - Ni - Ag (1 KA - 4 KA - 6 KA)

210 x 210 mils (see drawing)

100 mm, with std. < 110 > flat

300 µm

130 µm

0.25 mm diameter minimum

See drawing

Storage in original container, in dessicated

nitrogen, with no contamination

IR210DG12HCBPBF Related Products

	IR210DG12HCBPBF	IR210DG06HCBPBF
Description	Rectifier Diode, 1 Phase, 1 Element, 1200V V(RRM), Silicon, WAFER	Rectifier Diode, 1 Phase, 1 Element, 600V V(RRM), Silicon, WAFER
Is it lead-free?	Lead free	Lead free
Is it Rohs certified?	conform to	conform to
Maker	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）
Parts packaging code	WAFER	WAFER
package instruction	O-XUUC-N	O-XUUC-N
Reach Compliance Code	compliant	compliant
ECCN code	EAR99	EAR99
application	HIGH POWER	HIGH POWER
Configuration	SINGLE	SINGLE
Diode component materials	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE
JESD-30 code	O-XUUC-N	O-XUUC-N
Number of components	1	1
Phase	1	1
Number of terminals	1	1
Package body material	UNSPECIFIED	UNSPECIFIED
Package shape	ROUND	ROUND
Package form	UNCASED CHIP	UNCASED CHIP
Peak Reflow Temperature (Celsius)	260	260
Certification status	Not Qualified	Not Qualified
Maximum repetitive peak reverse voltage	1200 V	600 V
surface mount	YES	YES
Terminal form	NO LEAD	NO LEAD
Terminal location	UPPER	UPPER
Maximum time at peak reflow temperature	40	40

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