IBM014400MT1-70 datasheet, PDF

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IBM014400MT1-70: DescriptionFast Page DRAM, 1MX4, 70ns, CMOS, PDSO20, 0.300 INCH, PLASTIC, TSOP-26/20; Categorystorage storage; File Size270KB，25 Pages; ManufacturerIBM; Websitehttp://www.ibm.com

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IBM014400MT1-70 Overview

Fast Page DRAM, 1MX4, 70ns, CMOS, PDSO20, 0.300 INCH, PLASTIC, TSOP-26/20

IBM014400MT1-70 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	IBM
Parts packaging code	TSOP
package instruction	TSOP2, TSOP20/26,.36
Contacts	20
Reach Compliance Code	unknown
ECCN code	EAR99
access mode	FAST PAGE
Maximum access time	70 ns
Other features	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH
I/O type	COMMON
JESD-30 code	R-PDSO-G20
JESD-609 code	e0
length	17.14 mm
memory density	4194304 bit
Memory IC Type	FAST PAGE DRAM
memory width	4
Number of functions	1
Number of ports	1
Number of terminals	20
word count	1048576 words
character code	1000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	1MX4
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP2
Encapsulate equivalent code	TSOP20/26,.36
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Certification status	Not Qualified
refresh cycle	1024
Maximum seat height	1.2 mm
self refresh	YES
Maximum standby current	0.00015 A
Maximum slew rate	0.07 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal pitch	1.27 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
width	7.62 mm
Base Number Matches	1

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IBM0144001M x 410/10, 5.0V. IBM014400P1M x 410/10, 3.3V, LP, SR. IBM014400M1M x 410/10, 5.0V, LP, SR. IBM014400B1M x 410/10, 3.3V.

IBM014400 IBM014400M

IBM014400B IBM014400P

1M x 4 10/10 DRAM

Features

• 1,048,576 word by 4 bit organization

• Power Supply: 3.3

0.3V or 5.0

0.5V

• Standard Power (SP) and Low Power (LP)

• 1024 Refresh Cycles

- 16 ms Refresh Rate (SP version)

- 128 ms Refresh Rate (LP version)

• High Performance:

-60

RAC

CAC

RAS Access Time

CAS Access Time

Column Address Access Time

Cycle Time

Fast Page Mode Cycle Time

60ns

15ns

30ns

110ns

40ns

-70

70ns

18ns

35ns

130ns

40ns

• Power Dissipation

- Active (max)

- 85 mA / 70 mA (5.0V)

- 95 mA / 80 mA (3.3V)

- Standby Current: TTL Inputs (max)

- 2.0 mA (SP version)

- 1.0 mA (LP version)

- Standby Current: CMOS Inputs (max)

- 1.0 mA (SP version)

- 0.15 mA (LP version)

• Fast Page Mode

• RAS Only, and CAS before RAS Refresh

• Hidden Refresh

• Self-Refresh (LP version only)

• Packages: SOJ-26/20 (300mil)

TSOP-26/20 (300mil)

Description

The IBM014400 is a fast-page dynamic RAM orga-

nized 1,048,576 words by 4 bits. The devices are

fabricated in IBM’s 4M-bit Shrink 2 CMOS silicon

gate technology. The circuits and process have

been designed to provide high performance, low

power dissipation, and high reliability. The devices

operate with either a 5.0V

0.5V or 3.3V

0.3V

power supply and are offered in a plastic 26/20 pin

SOJ (300mil) or TSOP (300mil) package. Refresh-

ing may be accomplished by means of a CAS before

RAS refresh cycle (CBR) that internally generates

the refresh address. RAS - only refresh cycles can

also refresh all memory locations. Self-Refresh

mode is entered by holding RAS low for

≥

100µS

during a CBR cycle. Detection of this long RAS time

during a CBR cycle starts an internal oscillator that

maintains data integrity without external clocking.

Self-Refresh mode is included as a standard feature

for Low Power devices (IBM014400M and

IBM014400P). Self Refresh operating current is

≤

170µA (max) and typically

≤

100µA. All low power

devices support Extended Data Retention of 128ms,

eight times (8x) the retention supported by IBM’s

standard power devices.

Pin Assignments

I/O0

I/O1

RAS

Vss

I/O3

I/O2

CAS

Pin Description

A0 - A9

I/O0 - I/O3

RAS

CAS

Address Input

Data Input/Output

Row Address Strobe

Column Address Strobe

Read/Write Input

Output Enable

Power (5.0V or 3.3V)

Ground

Vcc

27H4339

SA14-4219-04

Revised 6/96

Use is further subject to the provisions at the end of this document.

Page 1 of 24

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