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IXTM10P45

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size1MB,12 Pages
ManufacturerIXYS
Download Datasheet Parametric View All

IXTM10P45 Overview

Transistor

IXTM10P45 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerIXYS
Reach Compliance Codeunknown
ConfigurationSingle
Maximum drain current (Abs) (ID)10 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-609 codee0
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Polarity/channel typeP-CHANNEL
Maximum power dissipation(Abs)200 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Base Number Matches1
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