Memory ICs
BR9080 / BR9080F / BR9080RFV /
BR9016 / BR9016F / BR9016RFV
8k, 16k bit EEPROMs for direct
connection to serial ports
BR9080 / BR9080F / BR9080RFV /
BR9016 / BR9016F / BR9016RFV
The BR9080 and BR9016 series are serial EEPROMs that can be connected directly to a serial port and can be erased
and written electrically. Writing and reading is performed in word units, using four types of operation commands.
Communication occurs though CS, SK, DI, and DO pins, WC pin control is used to initiate a write disabled state, enabling
these EEPROMs to be used as one-time ROMs. During writing, operation is checked via the internal status check.
Applications
Movie, camera, cordless telephones, car stereos, VCRs, TVs, DIP switches, and other battery-powered equipment
requiring low voltage and low current
Features
1) BR9080 / F / RFV (8k bit): 512 words
×16
bits
BR9016 / F / RFV (16k bit): 1024 words
×
16bits
2) Single power supply operation
3) Serial data input and output
4) Automatic erase-before-write
5) Low current consumption
Active (5V) : 5mA (max.)
Standby (5V) : 3µA (max.)
6) Noise filter built into SK pin
7) Write protection when V
CC
is low
8) Compact DIP8 / SOP8 / SSOP-B8 packages
9) High reliability CMOS process
10) 100,000 ERASE / WRITE cycles
11) 10 years Data Retention
Block diagram
INSTRUCTION DECODE
R/B
CS
CONTROL
CLOCK GENERATION
DETECT
SUPPLY
VOLTAGE
WRITE
DISABLE
HIGH
VOLTAGE
GENERATOR
SK
WC
DI
INSTRACTION
REGISTER
ADD
BUFFER
9bit
ADD
DECORDER
9bit
8,192 bit
EEPROM
DO
DATA
REGISTER
16bit
R/W
AMPS
16bit
Memory ICs
Pin descriptions
V
CC
R/B
WC
GND
WC
BR9080 / BR9080F / BR9080RFV /
BR9016 / BR9016F / BR9016RFV
GND
DO
DI
V
CC
R / B WC GND
CS
SK
DI
DO
R/B
V
CC
CS
SK
CS
SK
DI
DO
BR9016 : DIP8
BR9016F : SOP8
Fig.1
BR9016RFV : SSOP8
Pin No.
DIP / SSOP
1
2
3
4
5
6
7
8
SOP
3
4
5
6
7
8
1
2
Pin name
CS
SK
DI
DO
GND
WC
R/B
V
CC
Chip Select Control
Serial Data Clock Input
Function
Op code, address, Serial Data Input
Serial Data Output
Ground 0V
Write Control Input
READY / BUSY Output
Power supply
Absolute maximum ratings
(Ta=25°C)
Parameter
Supply voltage
Symbol
V
CC
DIP8
Power dissipation
Pd
SOP8
SSOP-B8
Storage temperature
Operation temperature
Input voltage
Tstg
Topr
−
−40∼+85
−0.3∼V
CC
+0.3
Limits
−0.3∼+7.0
500
∗
1
350
∗
2
300
∗
3
°C
°C
V
mW
Unit
V
−65∼+125
∗
1 Reduced by 5.0mW for each increase in Ta of 1
°
C over 25
°
C.
∗2
Reduced by 3.5mW for each increase in Ta of 1
°
C over 25
°
C.
∗3
Reduced by 3.0mW for each increase in Ta of 1
°
C over 25
°
C.
Recommended operating conditions
(Ta=25°C)
Parameter
Power supply voltage
Input voltage
WRITE
READ
V
IN
Symbol
V
CC
Min.
2.7
2.7
0
Typ.
−
−
−
Max.
5.5
5.5
V
CC
Unit
V
V
V
Memory ICs
Electrical characteristics
BR9080 / BR9080F / BR9080RFV /
BR9016 / BR9016F / BR9016RFV
BR9080 / F / RFV, BR9016 / F / RFV: 5V (Unless otherwise noted, Ta=−40∼85°C, V
CC
=2.7V∼5.5V)
Parameter
Input low level voltage 1
Input high level voltage 1
Input low level voltage 2
Input high level voltage 2
Output low level voltage
Output high level voltage
Input leak current
Output leak current
Consumption current
during operation
Standby current
SK frequency
Symbol
V
IL1
V
IH1
V
IL2
V
IH2
V
OL
V
OH
I
LI
I
LO
I
CC1
I
CC2
I
SB
f
SK
Min.
−
0.7×V
CC
−
0.8×V
CC
0
V
CC
−0.4
−1
−1
−
−
−
−
Typ.
−
−
−
−
−
−
−
−
−
−
−
−
Max.
0.3×V
CC
−
0.2×V
CC
−
0.4
V
CC
1
1
5
3
3
2
Unit
V
V
V
V
V
V
µA
µA
mA
mA
µA
MHz
DI pin
DI pin
CS, SK, WC pin
CS, SK, WC pin
I
OL
=2.1mA
I
OH
=−0.4mA
V
IN
=0V∼V
CC
V
OUT
=0V∼V
CC
, CS=V
CC
f
SK
=2MHz tE / W=10ms (WRITE)
f
SK
=2MHz (READ)
CS / SK / DI / WC=V
CC
DO, R / B=OPEN
−
Conditions
BR9080 / F / RFV, BR9016 / F / RFV: 3V (Unless otherwise noted, Ta=−40∼85°C, V
CC
=2.7V∼5.5V)
Parameter
Input low level voltage 1
Input high level voltage 1
Input low level voltage 2
Input high level voltage 2
Output low level voltage
Output high level voltage
Input leak current
Output leak current
Consumption current
during operation
Standby current
SK frequency
Symbol
V
IL1
V
IH1
V
IL2
V
IH2
V
OL
V
OH
I
LI
I
LO
I
CC1
I
CC2
I
SB
f
SK
Min.
−
0.7×V
CC
−
0.8×V
CC
0
V
CC
−0.4
−1
−1
−
−
−
−
Typ.
−
−
−
−
−
−
−
−
−
−
−
−
Max.
0.3×V
CC
−
0.2×V
CC
−
0.4
V
CC
1
1
3
750
2
2
Unit
V
V
V
V
V
V
µA
µA
mA
µA
µA
MHz
DI pin
DI pin
CS, SK, WC pin
CS, SK, WC pin
I
OL
=100µA
I
OH
=−100µA
V
IN
=0V∼V
CC
V
OUT
=0V∼V
CC
, CS=V
CC
f
SK
=2MHz tE / W=10ms (WRITE)
f
SK
=2MHz (READ)
CS / SK / DI / WC=V
CC
DO, R / B=OPEN
−
Conditions
Not designed for radiation resistance
Memory ICs
BR9080 / BR9080F / BR9080RFV /
BR9016 / BR9016F / BR9016RFV
Operating timing characteristics
BR9080 / F / RFV, BR9016 / F / RFV (Unless otherwise noted, Ta=−40∼85°C, V
CC
=2.7V∼5.5V)
Parameter
CS setup time
CS hold time
Data setup time
Data hold time
DO rise delay time
DO fall delay time
Self-timing programming cycle
CS minimum high level time
READY / BUSY display valid time
Symbol
f
CSS
t
CSH
t
DIS
t
DIH
t
PD1
t
PD0
t
E / W
t
CS
t
SV
t
OH
t
WH
t
WL
t
WCS
t
WCH
Min.
100
100
100
100
−
−
−
250
−
0
250
250
0
0
Typ.
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Max.
−
−
−
−
150
150
10
−
150
150
−
−
−
−
Unit
ns
ns
ns
ns
ns
ns
ms
ns
ns
ns
ns
ns
ns
ms
Time when DO goes HIGH-Z (via CS)
Data clock high level time
Data clock low level time
Write control setup time
Write control hold time
Timing chart
Synchronous Data Input Output Timing
CS
t
CS
t
WH
t
CSS
t
CSH
t
DIH
SK
t
WL
t
DIS
DI
t
PD
DO
t
PD
t
OH
WC
Fig.2
· Input data are clocked in to DI at the rising edge of the clock (SK).
· Output data will toggle on the falling edge of the SK clock.
· The WC pin does not have any effect on the READ, EWEN and EWDS operations.
Memory ICs
Circuit operation
(1) Command mode
BR9080
Instruction
Read (READ)
Write (WRITE)
BR9080 / BR9080F / BR9080RFV /
BR9016 / BR9016F / BR9016RFV
Start Bit
1010
1010
1010
1010
Op Code
100 A0
010 A0
0011
0000
Address
A1 A2 A3 A4 A5 A6 A7 A8
A1 A2 A3 A4 A5 A6 A7 A8
Data
D0 D1
−
D14 D15
Erase / Write enable (EWEN)
Erase / Write disable
(EWDS)
∗
: Means either V
IH
or V
IL
Address and data are transferred from LSB.
∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗
∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗
BR9016
Instruction
Read (READ)
Write (WRITE)
Start Bit
1010
1010
1010
1010
Op Code
10 A0 A1
01 A0 A1
0011
0000
Address
A2 A3 A4 A5 A6 A7 A8 A9
A2 A3 A4 A5 A6 A7 A8 A9
Data
D0 D1
−
D14 D15
Erase / Write enable (EWEN)
Erase / Write disable
(EWDS)
∗
: Means either V
IH
or V
IL
Address and data are transferred from LSB.
∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗
∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗
(2) Writing enabled / disabled
H
SK
L
H
1
4
8
ENABLE
=
11
DISABLE
=
00
12
16
CS
L
H
DI
L
1
0
1
0
0
0
HIGH-Z
DO
H
R/B
WC
High or LOW
Fig.3
1) When CS is “HIGH” during power up, BR9080 / F / RFV, BR9016 / F / RFV comes up in the erase / write disabled
(EWDS) state. In order to be programmable, it must receive an enable (EWEN) instruction.
The device remains programmable until a disable (EWDS) instruction is entered, or until it is powered down.
2) It is unnecessary to add the clock after 16th clock.
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