INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
BUT11AFI
DESCRIPTION
·High
Voltage
·High
Speed Switching
·
APPLICATIONS
·Converters
·Inverters
·Switching
regulators
·Motor
control systems
ABSOLUTE MAXIMUM RATINGS (T
a
=25
℃
)
SYMBOL
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
B
PARAMETER
Collector-Emitter Voltage V
BE
= 0
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current
w
.cn
i
em
cs
.is
w
w
VALUE
1000
450
9
UNIT
V
V
V
5
A
10
2
4
35
150
-65~150
A
A
A
W
℃
℃
I
BM
P
C
T
j
T
stg
Base Current-Peak
Collector Power Dissipation
@T
C
=25℃
Junction Temperature
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
3.57
UNIT
℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
CE(
sat
)
V
BE(
sat
)
I
CES
I
EBO
h
FE-1
h
FE-2
PARAMETER
Collector-Emitter Sustaining Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain
CONDITIONS
I
C
= 0.1A; I
B
= 0
I
C
= 2.5A; I
B
= 0.5A
I
C
= 2.5A; I
B
= 0.5A
V
CE
= 1000V; V
BE
= 0
V
CE
= 1000V; V
BE
= 0; T
j
= 125℃
V
EB
= 9V; I
C
= 0
I
C
= 5mA; V
CE
= 5V
MIN
450
BUT11AFI
TYP.
MAX
UNIT
V
1.5
1.3
1.0
2.0
10
V
V
mA
mA
Switching Times; Resistive Load
Turn-on Time
Storage Time
Fall Time
t
on
t
s
t
f
w
em
cs
.is
w
w
I
C
= 0.5A; V
CE
= 5V
I
C
= 2.5A; I
B1
= -I
B2
= 0.5A;
V
CC
= 250V
.cn
i
10
10
35
35
1.0
4.0
0.8
μs
μs
μs
isc Website：www.iscsemi.cn
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