DATA SHEET
MOS FIELD EFFECT TRANSISTOR
3SK222
RF AMPLIFIER FOR FM TUNER AND VHF TV TUNER
N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR
4 PINS MINI MOLD
FEATURES
• The Characteristic of Cross-Modulation is good.
CM = 92 dB
µ
TYP. @ f = 200 MHz, G
R
= –30 dB
PACKAGE DIMENSIONS
(Unit: mm)
0.4
+0.1
–0.05
1.5
+0.2
–0.1
2.8
+0.2
–0.3
• Low Noise Figure:
• High Power Gain:
• Enhancement Type.
NF1 = 1.2 dB TYP. (f = 200 MHz)
NF2 = 1.0 dB TYP. (f = 55 MHz)
G
PS
= 23 dB TYP. (f = 200 MHz)
(1.8)
0.85 0.95
2.9±0.2
2
• Automatically Mounting:
• Small Package:
Embossed Type Taping
4 Pins Mini Mold
1
5°
5°
Drain to Source Voltage
Gate1 to Source Voltage
Gate2 to Source Voltage
Gate1 to Drain Voltage
Gate2 to Drain Voltage
Drain Current
Total Power Dissipation
Channel Temperature
Storage Temperature
*1
R
L
≥
10 kΩ
V
DSX
V
G1S
V
G2S
V
G1D
V
G2D
I
D
P
D
T
ch
T
stg
±8
18
(±10)
*1
18
18
25
200
125
–55 to +125
±8
(±10)
*1
V
1.1
0.8
V
V
V
V
mA
mW
°C
°C
+0.2
–0.1
0.4
+0.1
–0.05
0.16
+0.1
–0.06
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
0.6
+0.1
–0.05
5°
0 to 0.1
5°
1.
2.
3.
4.
Source
Drain
Gate 2
Gate 1
PRECAUTION
Avoid high static voltages or electric fields so that this device would not suffer from any damage due to those voltage
or fields.
Document No. P10574EJ2V0DS00 (2nd edition)
(Previous No. TD-2267)
Date Published August 1995 P
Printed in Japan
4
(1.9)
• Suitable for use as RF amplifier in FM tuner and VHF TV tuner.
3
0.4
+0.1
–0.05
©
1989
1993
3SK222
ELECTRICAL CHARACTERISTICS (T
A
= 25
°
C)
CHARACTERISTIC
Drain to Source Breakdown
Voltage
Drain Current
Gate1 to Source Cutoff
Voltage
Gate2 to Source Cutoff
Voltage
Gate1 Reverse Current
Gate2 Reverse Current
Forward Transfer
Admittance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Power Gain
Noise Figure 1
Noise Figure 2
G
PS
NF1
NF2
21.0
23.0
1.2
1.0
2.0
2.0
dB
dB
dB
V
DS
= 6 V, V
G2S
= 4 V, I
D
= 10 mA
f = 200 MHz
V
DS
= 6 V, V
G2S
= 4 V, I
D
= 10 mA
f = 55 MHz
C
iss
C
DSS
C
rss
3.6
1.0
4.3
1.5
0.02
5.0
2.0
0.03
pF
pF
pF
SYMBOL
BV
DSX
MIN.
18
TYP.
MAX.
UNIT
V
TEST CONDITIONS
V
G1S
= V
G2S
= –2 V, I
D
= 10
µ
A
V
DS
= 6 V, V
G2S
= 3 V, V
G1S
= 0.75 V
V
DS
= 6 V, V
G2S
= 3 V, I
D
= 10
µ
A
V
DS
= 6 V, V
G2S
= 3 V, I
D
= 10
µ
A
V
DS
= 0, V
G2S
= 0, V
G1S
=
±8
V
V
DS
= 0, V
G1S
= 0, V
G2S
=
±8
V
V
DS
= 5 V, V
G2S
= 4 V, I
D
= 10 mA
f = 1 kHz
V
DS
= 6 V, V
G2S
= 3 V, I
D
= 10 mA
f = 1 MHz
I
DSX
V
G1S(off)
0.01
0
8.0
+1.0
mA
V
V
G2S(off)
0
+1.0
±20
±20
V
I
G1SS
I
G2SS
|y
fs
|
15
19.5
nA
nA
mS
I
DSX
Classification
Class
Marking
I
DSX
(mA)
V21/VBA*
V21
0.01 to 3.0
V22/VBB*
V22
1.0 to 8.0
*
Old specification/New specification
2
3SK222
TYPICAL CHARACTERISTICS (T
A
= 25
°
C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
P
T
– Total Power Dissipation – mW
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
400
300
200
100
I
D
– Drain Current – mA
25
20
15
10
5
0
3
6
9
V
G2S
= 3 V
V
G1S
= 1.8 V
1.6 V
1.4 V
1.2 V
1.0 V
0.8 V
0.6 V
12
15
V
DS
– Drain to Source Voltage – V
0
25
50
75
100
125
T
A
– Ambient Temperature – °C
|y
fs
| – Forward Transfer Admittance – mS
DRAIN CURRENT vs.
GATE1 TO SOURCE VOLTAGE
25
20
15
10
5
0
0.5
1.0
1.5
2.0
2.0 V
1.5 V
1.0 V
2.5
V
DS
= 6 V
V
G2S
= 4 V
3.5 V
3.0 V
2.5 V
FORWARD TRANSFER ADMITTANCE vs.
GATE1 TO SOURCE VOLTAGE
40
32
24
16
8
1.0 V
0
0.5
1.0
1.5
2.0
2.5
V
G2S
= 4 V
3.0 V 3.5 V
2.0 V 2.5 V
1.5 V
V
DS
= 6 V
f = 1 kHz
I
D
– Drain Current – mA
V
G1S
– Gate1 to Source Voltage – V
V
G1S
– Gate1 to Source Voltage – V
|y
fs
| – Forward Transfer Admittance – mS
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
40
32
24
16
8
0
1.0 V
4
1.5 V
8
2.0 V
12
16
20
V
G2S
= 4 V
3.5 V
3.0 V
2.5 V
V
DS
= 6 V
f = 1 kHz
C
iss
– Input Capacitance – pF
INPUT CAPACITANCE vs.
GATE2 TO SOURCE VOLTAGE
7.0
I
D
= 10 mA
(at V
DS
= 6 V
V
G2S
= 4 V)
f = 1 MHz
6.0
5.0
4.0
3.0
I
D
– Drain Current – mA
2.0
–1.0
0
1.0
2.0
3.0
4.0
V
G2S
– Gate2 to Source Voltage – V
3
3SK222
OUTPUT CAPACITANCE vs.
GATE2 TO SOURCE VOLTAGE
2.5
C
OSS
– Output Capacitance – pF
I
D
= 10 mA
(at V
DS
= 6 V
V
G2S
= 4 V)
f = 1 MHz
10
POWER GAIN AND NOISE FIGURE vs.
GATE2 TO SOURCE VOLTAGE
I
D
= 10 mA
DS
=
20 (at VV
G2S
6 V V)
=4
f = 200 MHz
G
PS
– Power Gain – dB
10
G
PS
1.5
N
F
– Noise Figure – dB
2.0
5
0
1.0
–10
NF
0
2.0
4.0
6.0
8.0
0.5
–20
0
–1.0
0
1.0
2.0
3.0
4.0
0
–2.0
V
G2S
– Gate2 to Source Voltage – V
V
G2S
– Gate2 to Source Voltage – V
4
3SK222
NF TEST CIRCUIT AT f = 55 MHz
V
G2S
V
DS
RFC
2.2 kΩ
Ferrite
Beads
1 500 pF
1 500 pF
1 000 pF
INPUT
3.3 kΩ
50
Ω
27 pF
47 kΩ
1 000 pF
OUTPUT
47 kΩ
27 pF
3.3 kΩ
50
Ω
V
G1S
G
PS
AND NF TEST CIRCUIT AT f = 200 MHz
V
G2S
1 000 pF
22 kΩ
1 000 pF
Ferrite Beads
INPUT
50
Ω
1 000 pF
22 kΩ
L
3
7 pF
L
1
15 pF
15 pF
L
2
1 000 pF
1 000 pF
7 pF OUTPUT
50
Ω
1 000 pF
1 000 pF
V
G1S
V
DS
L
1
:
φ
0.6 mm U.E.W
φ
7 mm 3 T
L
2
:
φ
0.6 mm U.E.W
φ
7 mm 3 T
L
3
: RFC 2.2
µ
H
5
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