DQ28C256-300 datasheet, PDF - EEWORLD Datasheet

DQ28C256-300: DescriptionEEPROM, 32KX8, 300ns, Parallel, CMOS, CDIP28; Categorystorage storage; File Size280KB，8 Pages; ManufacturerLSC/CSI; Websitehttps://lsicsi.com

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DQ28C256-300 Overview

EEPROM, 32KX8, 300ns, Parallel, CMOS, CDIP28

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	LSC/CSI
package instruction	DIP, DIP28,.6
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum access time	300 ns
Other features	AUTOMATIC WRITE;PAGE WRITE
command user interface	NO
Data polling	YES
Durability	10000 Write/Erase Cycles
JESD-30 code	R-GDIP-T28
JESD-609 code	e0
memory density	262144 bit
Memory IC Type	EEPROM
memory width	8
Number of functions	1
Number of terminals	28
word count	32768 words
character code	32000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	32KX8
Output characteristics	3-STATE
Package body material	CERAMIC, GLASS-SEALED
encapsulated code	DIP
Encapsulate equivalent code	DIP28,.6
Package shape	RECTANGULAR
Package form	IN-LINE
page size	64 words
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Programming voltage	5 V
Certification status	Not Qualified
Maximum standby current	0.0002 A
Maximum slew rate	0.06 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
switch bit	NO
Base Number Matches	1

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