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59C11-I/SM

Description
64 X 16 4-WIRE SERIAL EEPROM, PDSO8, 0.207 INCH, PLASTIC, SOIC-8
Categorystorage    storage   
File Size133KB,8 Pages
ManufacturerMicrochip
Websitehttps://www.microchip.com
Download Datasheet Parametric View All

59C11-I/SM Overview

64 X 16 4-WIRE SERIAL EEPROM, PDSO8, 0.207 INCH, PLASTIC, SOIC-8

59C11-I/SM Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeSOIC
package instruction0.207 INCH, PLASTIC, SOIC-8
Contacts8
Reach Compliance Codenot_compliant
ECCN codeEAR99
Other featuresAUTOMATIC WRITE; DATA RETENTION > 40 YEARS
Spare memory width8
Maximum clock frequency (fCLK)1 MHz
Data retention time - minimum200
Durability1000000 Write/Erase Cycles
JESD-30 codeR-PDSO-G8
JESD-609 codee0
length5.28 mm
memory density1024 bit
Memory IC TypeEEPROM
memory width16
Number of functions1
Number of terminals8
word count64 words
character code64
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize64X16
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeSOP
Encapsulate equivalent codeSOP8,.3
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Parallel/SerialSERIAL
power supply5 V
Certification statusNot Qualified
Maximum seat height2.03 mm
Serial bus type4-WIRE
Maximum standby current0.0001 A
Maximum slew rate0.004 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch1.27 mm
Terminal locationDUAL
width5.207 mm
Maximum write cycle time (tWC)15 ms
write protectSOFTWARE
Base Number Matches1
59C11
1K 5.0V CMOS Serial EEPROM
FEATURES
• Low power CMOS technology
• Pin selectable memory organization
- 128 x 8 or 64 x 16 bit organization
• Single 5 volt only operation
• Self timed WRITE, ERAL and WRAL cycles
• Automatic erase before WRITE
• RDY/BSY status information during WRITE
• Power on/off data protection circuitry
• 1,000,000 ERASE/WRITE cycles guaranteed
• Data Retention > 200 Years
• 8-pin DIP or SOIC package
• Available for extended temperature ranges:
- Commercial: 0˚C to +70˚C
- Industrial: -40˚C to +85˚C
- Automotive: -40˚C to +125˚C
PACKAGE TYPE
DIP
CS
CLK
DI
DO
1
2
3
4
8
7
6
5
V
CC
RDY/BSY
ORG
V
SS
59C11
SOIC
1
2
3
4
8
7
6
5
CS
CLK
V
CC
RDY/BSY
ORG
V
SS
DESCRIPTION
DI
59C11
The Microchip Technology Inc. 59C11 is a 1K bit Elec-
trically Erasable PROM. The device is configured as
128 x 8 or 64 x 16, selectable externally by means of
the control pin ORG. Advanced CMOS technology
makes this device ideal for low power nonvolatile mem-
ory applications. The 59C11 is available in the stan-
dard 8-pin DIP and a surface mount SOIC package.
DO
BLOCK DIAGRAM
V
CC
V
SS
ORG
MEMORY
ARRAY
128 x 8 or
64 x 16
ADDRESS
DECODER
DATA REGISTER
DI
MODE
DECODE
LOGIC
OUTPUT
BUFFER
DO
CS
RDY/BSY
CLK
CLOCK
GENERATOR
©
1995 Microchip Technology Inc.
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