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2N4856A

Description
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-18
CategoryDiscrete semiconductor    The transistor   
File Size64KB,1 Pages
ManufacturerInterFET
Websitehttp://www.interfet.com/
Environmental Compliance
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2N4856A Overview

Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-18

2N4856A Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Reach Compliance Codeunknown
Shell connectionGATE
ConfigurationSINGLE
Maximum drain-source on-resistance25 Ω
FET technologyJUNCTION
JEDEC-95 codeTO-18
JESD-30 codeO-MBCY-W3
Number of components1
Number of terminals3
Operating modeDEPLETION MODE
Maximum operating temperature150 °C
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeN-CHANNEL
Maximum power consumption environment1.8 W
Maximum power dissipation(Abs)0.36 W
Certification statusNot Qualified
surface mountNO
Terminal formWIRE
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
B-16
01/99
2N4856A, 2N4857A, 2N4858A, 2N4859A, 2N4860A, 2N4861A
N-Channel Silicon Junction Field-Effect Transistor
¥ Choppers
¥ Commutators
¥ Analog Switches
Absolute maximum ratings at T
A
= 25¡C
2N4856A, 2N4857A, 2N4858A
Reverse Gate Source Voltage
– 40 V
Reverse Gate Drain Voltage
– 40 V
Continuous Device Dissipation
1.8 W
Continuous Forward Gate Current
50 mA
Power Derating
10 mA/°C
2N4859A, 2N4860A, 2N4861A
– 30 V
– 30 V
1.8 W
50 mA
10 mA/°C
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
2N4856A, 2N4857A, 2N4858A
Gate Source Breakdown Voltage
2N4859A, 2N4860A, 2N4861A
Gate Reverse Current
2N4856A, 2N4857A, 2N4858A
Gate Reverse Current
2N4859A, 2N4860A, 2N4861A
Gate Source Cutoff Voltage
Drain Saturation Current (Pulsed)
Drain Cutoff Current
Drain Source ON Voltage
Dynamic Electrical Characteristics
Common Source ON Resistance
Common Source Input Capacitance
Common Source Reverse
Transfer Capacitance
Switching Characteristics
Turn ON Delay Time
t
d(on)
r
ds(on)
C
iss
C
rss
V
(BR)GSS
V
(BR)GSS
I
GSS
I
GSS
V
GS(OFF)
I
DSS
I
D(OFF)
V
DS(ON)
2N4856A
2N4859A
Min
Max
– 40
– 30
– 250
– 500
– 250
– 500
–4
50
250
500
0.75
(20)
– 10
2N4857A
2N4860A
Min
Max
– 40
– 30
– 250
– 500
– 250
– 500
–2
20
–6
100
250
500
0.5
(10)
2N4858A
2N4861A
Min
Max
– 40
– 30
– 250
– 500
– 250
– 500
– 0.8
8
–4
80
250
500
0.5
(5)
Unit
V
V
pA
nA
pA
nA
V
mA
pA
nA
V
(mA)
Process NJ132
Test Conditions
I
G
= – 1 µA, V
DS
= ØV
I
G
= – 1 µA, V
DS
= ØV
V
GS
= – 20V, V
DS
= ØV
V
GS
= – 20V, V
DS
= ØV
V
GS
= – 15V, V
DS
= ØV
V
GS
= – 15V, V
DS
= ØV
V
DS
= 15V, I
D
= 0.5 nA
V
DS
= 15V, V
GS
= ØV
V
DS
= 15V, V
GS
= – 10V
V
DS
= 15V, V
GS
= – 10V
V
GS
= ØV, I
D
= ( )
T
A
= 150°C
T
A
= 150°C
T
A
= 150°C
25
10
4
40
10
3.5
60
10
3.5
pF
pF
V
GS
= ØV, I
D
= Ø A
V
DS
= ØV, V
GS
= – 10V
V
DS
= ØV, V
GS
= – 10V
f = 1 kHz
f = 1 MHz
f = 1 MHz
5
(20)
[–10]
3
(20)
[–10]
25
(20)
[–10]
6
(10)
[– 6]
4
(10)
[– 6]
40
(10)
[– 6]
8
(5)
[– 4]
8
(5)
[– 4]
80
(5)
[– 4]
ns
(mA)
[V]
ns
(mA)
[V]
ns
(mA)
[V]
V
DD
= 10V, V
GS
= ØV
I
D(ON)
= ( )
V
GS(OFF)
= [ ]
Rise Time
t
r
Turn OFF Delay Time
t
d(off)
(2N4856A, 2N4859A)
R
L
= 464Ω
(2N4857A, 2N4860A)
R
L
= 953Ω
(2N4858A, 2N486A1)
R
L
= 1910Ω
TOÐ18 Package
See Section G for Outline Dimensions
Surface Mount
SMP4856A, SMP4857A, SMP4858A,
SMP4859A, SMP4860A, SMP4861A
Pin Configuration
1 Source, 2 Drain, 3 Gate & Case
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
www.interfet.com

2N4856A Related Products

2N4856A 2N4859A 2N4857A 2N4858A 2N4860A 2N4861A SMP4857A SMP4860A SMP4858A
Description Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-18 Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-18 Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-18 Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-18 Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-18 Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-18 Power Field-Effect Transistor, 40ohm, 1-Element, N-Channel, Silicon, Junction FET, TO-236 Power Field-Effect Transistor, 40ohm, 1-Element, N-Channel, Silicon, Junction FET, TO-236 Power Field-Effect Transistor, 60ohm, 1-Element, N-Channel, Silicon, Junction FET, TO-236
Reach Compliance Code unknown unknow unknown unknown unknown unknown unknown unknown unknown
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Maximum drain-source on-resistance 25 Ω 25 Ω 40 Ω 60 Ω 40 Ω 60 Ω 40 Ω 40 Ω 60 Ω
FET technology JUNCTION JUNCTION JUNCTION JUNCTION JUNCTION JUNCTION JUNCTION JUNCTION JUNCTION
JEDEC-95 code TO-18 TO-18 TO-18 TO-18 TO-18 TO-18 TO-236 TO-236 TO-236
JESD-30 code O-MBCY-W3 O-MBCY-W3 O-MBCY-W3 O-MBCY-W3 O-MBCY-W3 O-MBCY-W3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
Number of components 1 1 1 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material METAL METAL METAL METAL METAL METAL PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND ROUND ROUND RECTANGULAR RECTANGULAR RECTANGULAR
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO NO NO YES YES YES
Terminal form WIRE WIRE WIRE WIRE WIRE WIRE GULL WING GULL WING GULL WING
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM DUAL DUAL DUAL
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Shell connection GATE GATE GATE GATE GATE GATE - - -
Operating mode DEPLETION MODE - DEPLETION MODE DEPLETION MODE - - DEPLETION MODE DEPLETION MODE DEPLETION MODE
Maximum power consumption environment 1.8 W 1.8 W 1.8 W 1.8 W 1.8 W 1.8 W - - -
Maximum power dissipation(Abs) 0.36 W 0.36 W 0.36 W 0.36 W 0.36 W 0.36 W - - -
Base Number Matches 1 1 1 1 1 1 - - -
package instruction - CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
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