HMC407MS8G
/
407MS8GE
v03.1006
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 5 - 7 GHz
Typical Applications
This amplifier is ideal for use as a power
amplifier for 5 - 7 GHz applications:
• UNII
• HiperLAN
Features
Gain: 15 dB
Saturated Power: +29 dBm
28% PAE
Supply Voltage: +5V
Power Down Capability
No External Matching Required
11
LINEAR & POWER AMPLIFIERS - SMT
Functional Diagram
General Description
The HMC407MS8G & HMC407MS8GE are high
efficiency GaAs InGaP Heterojunction Bipolar
Transistor (HBT) MMIC Power amplifiers which
operate between 5 and 7 GHz. The amplifier requires
no external matching to achieve operation and is
thus truly 50 Ohm matched at input and output. The
amplifier is packaged in a low cost, surface mount
8 leaded package with an exposed base for im-
proved RF and thermal performance. The amplifier
provides 15 dB of gain, +29 dBm of saturated power
at 28% PAE from a +5V supply voltage. Power down
capability is available to conserve current consum-
ption when the amplifier is not in use.
Electrical Specifi cations,
T
A
= +25° C, Vs = 5V, Vpd = 5V
Parameter
Frequency Range
Gain
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Noise Figure
Supply Current (Icq)
Control Current (Ipd)
Switching Speed
Vpd = 0V/5V
Vpd = 5V
tON, tOFF
32
21
10
Min.
Typ.
5-7
15
0.025
12
15
25
29
37
5.5
0.002 / 230
7
30
36
22
18
0.035
12
Max.
Min.
Typ.
5.6 - 6.0
15
0.025
12
15
25
29
40
5.5
0.002 / 230
7
30
18
0.035
Max.
Units
GHz
dB
dB/ °C
dB
dB
dBm
dBm
dBm
dB
mA
mA
ns
11 - 28
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC407MS8G
/
407MS8GE
v03.1006
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 5 - 7 GHz
Broadband Gain & Return Loss
20
15
10
RESPONSE (dB)
5
0
-5
-10
-15
-20
-25
2
3
4
5
6
7
8
9
10
FREQUENCY (GHz)
Gain vs. Temperature
20
16
S21
S11
S22
GAIN (dB)
12
+25 C
+85 C
-40 C
8
11
7
7.5
8
4
0
4
4.5
5
5.5
6
6.5
FREQUENCY (GHz)
Input Return Loss vs. Temperature
0
Output Return Loss vs. Temperature
0
+25 C
+85 C
-40 C
RETURN LOSS (dB)
RETURN LOSS (dB)
-5
+25 C
+85 C
-40 C
-5
-10
-10
-15
-15
-20
-20
4
4.5
5
5.5
6
6.5
7
7.5
8
FREQUENCY (GHz)
-25
4
4.5
5
5.5
6
6.5
7
7.5
8
FREQUENCY (GHz)
P1dB vs. Temperature
34
Psat vs. Temperature
34
30
P1dB (dBm)
Psat (dBm)
30
26
26
+25 C
+85 C
-40 C
22
+25 C
+85 C
-40 C
22
18
18
14
4
4.5
5
5.5
6
6.5
7
7.5
8
FREQUENCY (GHz)
14
4
4.5
5
5.5
6
6.5
7
7.5
8
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11 - 29
LINEAR & POWER AMPLIFIERS - SMT
HMC407MS8G
/
407MS8GE
v03.1006
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 5 - 7 GHz
Power Compression @ 5.8 GHz
30
Pout (dBm), GAIN (dB), PAE (%)
25
20
15
10
5
0
0
4
8
12
16
20
INPUT POWER (dBm)
Pout (dBm)
Gain (dB)
PAE (%)
Output IP3 vs. Temperature
44
39
34
IP3 (dBm)
29
24
19
14
4
4.5
5
5.5
6
6.5
7
7.5
8
FREQUENCY (GHz)
+25 C
+85 C
-40 C
11
LINEAR & POWER AMPLIFIERS - SMT
Noise Figure vs. Temperature
10
Gain & Power vs. Supply Voltage
18
30
8
NOISE FIGURE (dB)
16
28
P1dB, Psat (dBm)
GAIN (dB)
6
14
26
4
+25C
+85C
-40C
12
24
2
10
22
0
5
5.5
6
FREQUENCY (GHz)
6.5
7
8
4.75
5
Vcc SUPPLY VOLTAGE (Vdc)
20
5.25
Reverse Isolation vs. Temperature
0
Power Down Isolation
0
-10
ISOLATION (dB)
+25 C
+85 C
-40 C
-10
ISOLATION (dB)
7
7.5
8
-20
-20
-30
-40
-30
-50
4
4.5
5
5.5
6
6.5
FREQUENCY (GHz)
-40
4
5
6
FREQUENCY (GHz)
7
8
11 - 30
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC407MS8G
/
407MS8GE
v03.1006
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 5 - 7 GHz
Gain, Power & Quiescent
Supply Current vs. Vpd @ 5.8 GHz
30
GAIN (dB), P1dB (dBm), Psat (dBm)
250
Absolute Maximum Ratings
Collector Bias Voltage (Vcc1, Vcc2)
Control Voltage (Vpd)
+5.5 Vdc
+5.5 Vdc
+20 dBm
150 °C
2W
32 °C/W
-65 to +150 °C
25
P1dB
Psat
Gain
Icq
200
RF Input Power (RFIN)(Vs = Vpd = +5Vdc)
Junction Temperature
20
150
Icq (mA)
Continuous Pdiss (T = 85 °C)
(derate 31 mW/°C above 85 °C)
Thermal Resistance
(junction to ground paddle)
Storage Temperature
Operating Temperature
15
100
11
LINEAR & POWER AMPLIFIERS - SMT
11 - 31
10
50
5
2.5
3
3.5
4
Vpd (Vdc)
4.5
0
5
-40 to +85 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
5. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO
PCB RF GROUND.
Package Information
Part Number
HMC407MS8G
HMC407MS8GE
Package Body Material
Low Stress Injection Molded Plastic
RoHS-compliant Low Stress Injection Molded Plastic
Lead Finish
Sn/Pb Solder
100% matte Sn
MSL Rating
MSL1
MSL1
[1]
Package Marking
[3]
H407
XXXX
H407
XXXX
[2]
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC407MS8G
/
407MS8GE
v03.1006
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 5 - 7 GHz
Pin Descriptions
Pin Number
Function
Description
Interface Schematic
1
Vcc1
Power supply voltage for the first amplifier stage. An external bypass capacitor
of 330 pF is required as shown in the application schematic.
11
LINEAR & POWER AMPLIFIERS - SMT
2
Vpd
Power control pin. For maximum power, this pin should be connected to 5V. A
higher voltage is not recommended. For lower die current, this voltage can be
reduced.
3, 6, 7
GND
Ground: Backside of package has exposed metal ground slug that must be
connected to ground thru a short path. Vias under the device are required.
This pin is AC coupled
and matched to 50 Ohms.
This pin is AC coupled
and matched to 50 Ohms.
4
RFIN
5
RFOUT
8
Vcc2
Power supply voltage for the output amplifier stage. An external bypass
capacitor of 330 pF is required. This capacitor should be placed no more than
20 mils form package lead.
Application Circuit
Note 1: Vcc1 and Vcc2 may be connected to a common Vcc.
Note 2: C2 should be located < 0.020” from Pin 8 (Vcc2).
11 - 32
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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