CBR1-D060SBK datasheet, PDF - EEWORLD Datasheet

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CBR1-D060SBK: DescriptionBridge Rectifier Diode, 1 Phase, 1A, 600V V(RRM), Silicon,; CategoryDiscrete semiconductor diode; File Size30KB，2 Pages; ManufacturerCentral Semiconductor

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CBR1-D060SBK Overview

Bridge Rectifier Diode, 1 Phase, 1A, 600V V(RRM), Silicon,

CBR1-D060SBK Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Central Semiconductor
package instruction	R-PDSO-G4
Reach Compliance Code	not_compliant
ECCN code	EAR99
Configuration	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON
Diode type	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1.1 V
JESD-30 code	R-PDSO-G4
JESD-609 code	e0
Maximum non-repetitive peak forward current	50 A
Number of components	4
Phase	1
Number of terminals	4
Maximum operating temperature	150 °C
Minimum operating temperature	-65 °C
Maximum output current	1 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	600 V
Maximum reverse current	0.00001 µA
surface mount	YES
Terminal surface	Tin/Lead (Sn80Pb20)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

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Reach Compliance Code	not_compliant	not_compliant	unknown	unknown	not_compliant	not_compliant	not_compliant	_compli
ECCN code	EAR99	EAR99	EAR99	3A001.A.2.C	EAR99	EAR99	EAR99	EAR99
Number of terminals	4	4	5	18	4	4	4	4
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	CERAMIC	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	NO	NO	YES	YES	YES	YES
Terminal location	DUAL	DUAL	SINGLE	DUAL	DUAL	DUAL	DUAL	DUAL
Is it lead-free?	Contains lead	Lead free	-	-	Lead free	Lead free	Contains lead	Contains lead
Is it Rohs certified?	incompatible	conform to	-	-	conform to	conform to	incompatible	incompatible
Maker	Central Semiconductor	Central Semiconductor	-	-	Central Semiconductor	Central Semiconductor	Central Semiconductor	Central Semiconductor
package instruction	R-PDSO-G4	R-PDSO-G4	-	DIP, DIP18,.3	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4
Configuration	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	-	-	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON	SILICON	-	-	SILICON	SILICON	SILICON	SILICON
Diode type	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	-	-	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1.1 V	1.1 V	-	-	1.1 V	1.1 V	1.1 V	1.1 V
JESD-30 code	R-PDSO-G4	R-PDSO-G4	-	R-PDIP-T18	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4
JESD-609 code	e0	e3	-	-	e3	e3	e0	e0
Maximum non-repetitive peak forward current	50 A	50 A	-	-	50 A	50 A	50 A	50 A
Number of components	4	4	-	-	4	4	4	4
Phase	1	1	-	-	1	1	1	1
Maximum operating temperature	150 °C	150 °C	-	125 °C	150 °C	150 °C	150 °C	150 °C
Minimum operating temperature	-65 °C	-65 °C	-	-55 °C	-65 °C	-65 °C	-65 °C	-65 °C
Maximum output current	1 A	1 A	-	-	1 A	1 A	1 A	1 A
Package shape	RECTANGULAR	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	-	IN-LINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	260	-	-	260	260	NOT SPECIFIED	NOT SPECIFIED
Maximum repetitive peak reverse voltage	600 V	600 V	-	-	1000 V	200 V	200 V	1000 V
Maximum reverse current	0.00001 µA	0.00001 µA	-	-	0.00001 µA	0.00001 µA	0.00001 µA	0.00001 µA
Terminal surface	Tin/Lead (Sn80Pb20)	Matte Tin (Sn)	-	-	Matte Tin (Sn)	Matte Tin (Sn)	Tin/Lead (Sn80Pb20)	Tin/Lead (Sn80Pb20)
Terminal form	GULL WING	GULL WING	-	THROUGH-HOLE	GULL WING	GULL WING	GULL WING	GULL WING
Maximum time at peak reflow temperature	NOT SPECIFIED	10	-	-	10	10	NOT SPECIFIED	NOT SPECIFIED

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