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HJ31C

Description
NPN EPITAXIAL PLANAR TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size32KB,3 Pages
ManufacturerHSMC
Websitehttp://www.hsmc.com.tw/
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HJ31C Overview

NPN EPITAXIAL PLANAR TRANSISTOR

HJ31C Parametric

Parameter NameAttribute value
MakerHSMC
package instruction,
Reach Compliance Codeunknow
Maximum collector current (IC)3 A
ConfigurationSingle
Minimum DC current gain (hFE)10
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)15 W
surface mountYES
Nominal transition frequency (fT)3 MHz
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE9010
Issued Date : 1996.02.14
Revised Date : 2002.03.04
Page No. : 1/3
HI41C
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HI41C is designed for use in general purpose amplifier and
switching applications.
Absolute Maximum Ratings
(Ta=25°C)
TO-251
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
°C
Junction Temperature .................................................................................................... +150
°C
Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) ..................................................................................... 20 W
Maximum Voltages and Currents
BVCBO Collector to Base Voltage..................................................................................... 100 V
BVCEO Collector to Emitter Voltage.................................................................................. 100 V
BVEBO Emitter to Base Voltage............................................................................................ 5 V
IC Collector Current............................................................................................................... 6 A
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICES
ICEO
IEBO
*VCE(sat)
*VBE(on)
*hFE1
*hFE2
fT
Min.
100
100
5
-
-
-
-
-
30
15
3
Typ.
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
10
50
500
1.5
2
-
75
-
Unit
V
V
V
uA
uA
uA
V
V
-
-
MHz
Test Conditions
IC=1mA, IE=0
IC=30mA, IB=0
IC=1mA, IC=0
VCE=100V, VEB=0
VCE=60V, IB=0
VEB=5V, IC=0
IC=6A, IB=600mA
VCE=4V, IC=6A
VCE=4V, IC=300mA
VCE=4V, IC=3A
VCE=10V, IC=500mA, f=1MHz
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
HI41C
HSMC Product Specification

HJ31C Related Products

HJ31C HI41C
Description NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR
Maker HSMC HSMC
Reach Compliance Code unknow unknow
Maximum collector current (IC) 3 A 6 A
Configuration Single Single
Minimum DC current gain (hFE) 10 15
Maximum operating temperature 150 °C 150 °C
Polarity/channel type NPN NPN
Maximum power dissipation(Abs) 15 W 20 W
surface mount YES NO
Nominal transition frequency (fT) 3 MHz 3 MHz
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