H11D1X, H11D2X, H11D3X, H11D4X
H11D1, H11D2, H11D3, H11D4
HIGH VOLTAGE OPTICALLY
COUPLED ISOLATOR
PHOTOTRANSISTOR OUTPUT
'X' SPECIFICATIONAPPROVALS
VDE 0884 in 3 available lead forms : -
- STD
-
G form
-
SMD approved to CECC 00802
1.2
Dimensions in mm
2.54
7.0
6.0
1
2
3
6
5
4
DESCRIPTION
The H11D series of optically coupled isolators
consist of infrared light emitting diode and
NPN silicon photo transistor in a standard 6 pin
dual in line plastic package.
FEATURES
Options :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
High Isolation Voltage (5.3kV
RMS
,7.5kV
PK
)
High BV
CER
( 300V - H11D1, H11D2 )
( 200V - H11D3, H11D4 )
All electrical parameters 100% tested
Custom electrical selections available
APPLICATIONS
DC motor controllers
Industrial systems controllers
Measuring instruments
Signal transmission between systems of
different potentials and impedances
7.62
6.62
7.62
4.0
3.0
0.5
13°
Max
0.26
3.0
0.5
3.35
ABSOLUTEMAXIMUMRATINGS
(25°C unless otherwise specified)
Storage Temperature
-55°C to + 150°C
Operating Temperature
-55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUTDIODE
Forward Current
Reverse Voltage
Power Dissipation
OUTPUT TRANSISTOR
Collector-emitter Voltage BV
CER
H11D1, H11D2
H11D3, H11D4
Collector-base Voltage BV
CBO
H11D1, H11D2
H11D3, H11D4
Emitter-collector Voltage BV
ECO
Collector Current
Power Dissipation
POWER DISSIPATION
(R
BE
= 1MΩ
)
300V
200V
300V
200V
6V
100mA
150mW
60mA
6V
100mW
OPTION SM
SURFACE MOUNT
OPTION G
7.62
0.6
0.1
10.46
9.86
1.25
0.75
0.26
10.16
Total Power Dissipation
250mW
(derate linearly 2.67mW/°C above 25°C)
ISOCOM COMPONENTS 2004 LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, TS25 1UD England
Tel: (01429)863609 Fax : (01429) 863581 e-mail
sales@isocom.co.uk http://www.isocom.com
14/8/08
DB91077
ELECTRICAL CHARACTERISTICS ( T
A
= 25°C Unless otherwise noted )
PARAMETER
Input
Forward Voltage (V
F
)
Reverse Current (I
R
)
Output
Collector-emitter Breakdown (BV
CER
)
H11D1, H11D2
H11D3, H11D4
Collector-base Breakdown (BV
CBO
)
H11D1, H11D2
H11D3, H11D4
Emitter-collector Breakdown (BV
ECO
)
Collector-emitter Dark Current (I
CER
)
H11D1, H11D2
300
200
300
200
6
100
250
100
250
MIN TYP MAX UNITS
1.2
1.5
10
V
μA
V
V
V
V
V
nA
μA
nA
μA
TEST CONDITION
I
F
= 10mA
V
R
= 6V
I
C
= 1mA, R
BE
= 1MΩ
( note 2 )
I
C
= 100μA
I
E
= 100μA
V
CE
= 200V,R
BE
=1MΩ
V
CE
= 200V,R
BE
=1MΩ,
T
A
=100°C
V
CE
= 100V,R
BE
=1MΩ
V
CE
= 100V,R
BE
=1MΩ,
T
A
=100°C
10mA I
F
, 10V V
CE
,
R
BE
= 1MΩ
10mA I
F
, 0.5mA I
C
,
R
BE
= 1MΩ
See note 1
See note 1
V
IO
= 500V (note 1)
V
CC
= 10V, I
C
= 2mA,
R
L
= 100Ω
,
fig 1
H11D3, H11D4
Coupled
Current Transfer Ratio (CTR)
Collector-emitter Saturation VoltageV
CE(SAT)
Input to Output Isolation Voltage V
ISO
Input-output Isolation Resistance R
ISO
Turn-on Time
ton
Turn-off Time
toff
20
0.4
5300
7500
5x10
10
5
5
%
V
V
RMS
V
PK
Ω
μs
μs
Note 1
Note 2
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory.
V
CC
Input
R
L
= 100Ω
Output
Output
10%
t
r
t
f
t
on
t
off
10%
90%
90%
FIG 1
14/8/08
DB91077m-AAS/A3
Collector Power Dissipation vs. Ambient Temperature
400
Collector power dissipation P
C
(mW)
Relative current transfer ratio
Relative Current Transfer Ratio vs.
Forward Current ( normalised to 10mA I
F
)
10
300
1.0
200
0.1
V
CE
= 10V
R
BE
= 1MΩ
T
A
= 25°C
0.01
1
2
5
10
20
50
100
0
-30
0
25
50
75
100
125
Ambient temperature T
A
( °C )
Forward Current vs. Ambient Temperature
80
70
60
50
40
30
20
10
-30
0
25
50
75
100
125
Relative current transfer ratio
Forward current I
F
(mA)
Forward current I
F
(mA)
Relative Current Transfer Ratio
vs. Ambient Temperature
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
-30
Normalised to V
CE
= 10V ,
I
F
= 10mA , R
BE
= 1MΩ ,
T
A
= 25°C
I
F
= 20mA
I
F
= 10mA
I
F
= 5mA
Ambient temperature T
A
( °C )
0
25
50
75
Ambient temperature T
A
( °C )
Collector-base Current vs.
Ambient Temperature
100
Forward Voltage vs. Forward Current
800
Collector-base current I
CBO
(μA)
1.4
Forward voltage V
F
(V)
700
600
500
400
300
200
100
0
-30
0
V
CB
= 10V
I
F
= 50mA
1.3
1.2
1.1
1.0
0.9
0.8
0.1 0.2
T
A
= -55°C
T
A
= +25°C
V
CB
= 200V V
CB
= 10V V
CB
= 10V
I
F
= 10mA I
F
= 10mA I
F
= 5mA
T
A
= +100°C
0.5
1
2
5 10
20
50
25
50
75
100
Forward current I
F
(mA)
14/8/08
Ambient temperature T
A
( °C )
DB91077m-AAS/A3
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