591-7602-107 datasheet, PDF - EEWORLD Datasheet

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591-7602-107: DescriptionPhoto Transistor, 900nm, 0.015A I(C); CategoryLED optoelectronic/LED photoelectric; File Size20KB，1 Pages; ManufacturerDIALIGHT; Websitehttps://www.dialight.com

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591-7602-107 Overview

Photo Transistor, 900nm, 0.015A I(C)

591-7602-107 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	DIALIGHT
Reach Compliance Code	compliant
Coll-Emtr Bkdn Voltage-Min	35 V
Configuration	SINGLE
Maximum dark power	200 nA
Infrared range	YES
JESD-609 code	e0
Nominal photocurrent	0.025 mA
Installation features	THROUGH HOLE MOUNT
Number of functions	1
Maximum on-state current	0.015 A
Maximum operating temperature	100 °C
Minimum operating temperature	-55 °C
Optoelectronic device types	PHOTO TRANSISTOR
peak wavelength	900 nm
shape	SQUARE
size	3 mm
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Base Number Matches	1

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3mm

Prism

CBI

Infrared Detector

True Surface Mount LED

4.3

[.170]

2.8

[.112]

2.8

[.112]

5.0

[.198]

COLLECTOR ID

6.1

[.240]

Dialight

591-7602-1xx

Part No.*

591-7602-1xx

Configuration

900 nm Phototransistor

2.1

[.082]

3.2

[.125]

MAX

Applications

[.004] MAX. BELOW

SURFACE A

SOLDER

PLATED

3.0

[.120]

LED LEAD

SOLDERING

SURFACE A

• Control and drive circuits

• Copiers

• Proximity Sensors

• Data Links

COLLECTOR

2.00

1.75 [.079]

[.069]

4.00

[.157]

1.50 Ø

[.059]

16.00

[.630]

3.05 [.120]

Note: Traces front to back

and masked.

2.4

[.094]

Benefits

2.0

[.079]

2.0

[.079]

7.5

[.295]

8.00

[.315]

DIRECTION OF FEED

1.2

[.047]

RECOMMENDED PC BOARD

LAYOUT

Dimensions in mm [inches]

• Small Package conserves space

• NPN Silicon Phototransistor switching

• Increased sensing range from narrow beam

• High Photosensitivity with day light filtering

• Long product life due to reliable components

• No measurable degredation

• Meets UL 94V-0 requirements

• Vibration and shock resistant

• Economical handling with 7 and 13 inch reels

U.S. Patent RE 34,254; foreign patents pending

Characteristics (T

= 25°C)

= 950 nm

Wavelength of Maximum Sensitivity

Radiant Sensitive Area Dimensions

Full Angle (2Θ 1/2)

Dark Current (VCEO = 25 V, E = 0)

Photocurrent (EE = 0.5 mW/cm

, VCE = 5 V)

900 nm

0.1 x 0.1 in.

30°

1 (≤ 200) nA

≥

µA

* ORDERING INFORMATION

Absolute Maximum Ratings at 25°C Ambient

Collector-Emitter Voltage

Collector Current

Peak Collector Current (t < 10 s)

Power Dissipation

Thermal Resistance, Junction to Ambient Mounting on PC Board

Operating & Storage Temperature

35 V

15 mA

75 mA

165 mW

450° C/W

–55° C to +100°C

591-7602-1xx

packaging option

20 pieces on tape

7" reel, 600 pcs/reel

13" reel, 2300 pcs/reel

2-14

Dialight Corporation • 1913 Atlantic Avenue • Manasquan, NJ 08736 • TEL: (732) 223-9400 • FAX: (732) 223-8788 • www.dialight.com

591-7602-107 Related Products

	591-7602-107	591-7602-102	591-7602-113
Description	Photo Transistor, 900nm, 0.015A I(C)	Photo Transistor, 900nm, 0.015A I(C)	Photo Transistor, 900nm, 0.015A I(C)
Is it lead-free?	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible	incompatible
Reach Compliance Code	compliant	compliant	compliant
Coll-Emtr Bkdn Voltage-Min	35 V	35 V	35 V
Configuration	SINGLE	SINGLE	SINGLE
Maximum dark power	200 nA	200 nA	200 nA
Infrared range	YES	YES	YES
JESD-609 code	e0	e0	e0
Nominal photocurrent	0.025 mA	0.025 mA	0.025 mA
Installation features	THROUGH HOLE MOUNT	SURFACE MOUNT	SURFACE MOUNT
Number of functions	1	1	1
Maximum on-state current	0.015 A	0.015 A	0.015 A
Maximum operating temperature	100 °C	100 °C	100 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C
Optoelectronic device types	PHOTO TRANSISTOR	PHOTO TRANSISTOR	PHOTO TRANSISTOR
peak wavelength	900 nm	900 nm	900 nm
shape	SQUARE	SQUARE	SQUARE
size	3 mm	3 mm	3 mm
surface mount	NO	YES	YES
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Base Number Matches	1	1	1
Maximum power dissipation	-	0.165 W	0.165 W

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