71V33S25PF datasheet, PDF - EEWORLD Datasheet

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71V33S25PF: DescriptionDual-Port SRAM, 2KX16, 25ns, CMOS, PQFP100, 14 X 14 MM, 1.40 MM HEIGHT, MO-136BR, TQFP-100; Categorystorage storage; File Size993KB，18 Pages; ManufacturerIDT (Integrated Device Technology)

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71V33S25PF Overview

Dual-Port SRAM, 2KX16, 25ns, CMOS, PQFP100, 14 X 14 MM, 1.40 MM HEIGHT, MO-136BR, TQFP-100

71V33S25PF Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	IDT (Integrated Device Technology)
package instruction	LFQFP, QFP100,.63SQ,20
Reach Compliance Code	not_compliant
Maximum access time	25 ns
I/O type	COMMON
JESD-30 code	S-PQFP-G100
JESD-609 code	e0
length	14 mm
memory density	32768 bit
Memory IC Type	DUAL-PORT SRAM
memory width	16
Humidity sensitivity level	3
Number of functions	1
Number of ports	2
Number of terminals	100
word count	2048 words
character code	2000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	2KX16
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	LFQFP
Encapsulate equivalent code	QFP100,.63SQ,20
Package shape	SQUARE
Package form	FLATPACK, LOW PROFILE, FINE PITCH
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	240
power supply	3.3 V
Certification status	Not Qualified
Maximum seat height	1.6 mm
Maximum standby current	0.005 A
Minimum standby current	3 V
Maximum slew rate	0.2 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn85Pb15)
Terminal form	GULL WING
Terminal pitch	0.5 mm
Terminal location	QUAD
Maximum time at peak reflow temperature	20
width	14 mm
Base Number Matches	1

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71V33S25PF Related Products

	71V33S25PF	71V33L55PF	71V33L35PF	71V33S25J
Description	Dual-Port SRAM, 2KX16, 25ns, CMOS, PQFP100, 14 X 14 MM, 1.40 MM HEIGHT, MO-136BR, TQFP-100	Dual-Port SRAM, 2KX16, 55ns, CMOS, PQFP100, 14 X 14 MM, 1.40 MM HEIGHT, MO-136BR, TQFP-100	Dual-Port SRAM, 2KX16, 35ns, CMOS, PQFP100, 14 X 14 MM, 1.40 MM HEIGHT, MO-136BR, TQFP-100	Dual-Port SRAM, 2KX16, 25ns, CMOS, PQCC68, 0.050 INCH PITCH, PLASTIC, MS-018AE, LCC-68
Is it lead-free?	Contains lead	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible
package instruction	LFQFP, QFP100,.63SQ,20	LFQFP, QFP100,.63SQ,20	LFQFP, QFP100,.63SQ,20	QCCJ, LDCC68,1.0SQ
Reach Compliance Code	not_compliant	not_compliant	not_compliant	not_compliant
Maximum access time	25 ns	55 ns	35 ns	25 ns
I/O type	COMMON	COMMON	COMMON	COMMON
JESD-30 code	S-PQFP-G100	S-PQFP-G100	S-PQFP-G100	S-PQCC-J68
JESD-609 code	e0	e0	e0	e0
length	14 mm	14 mm	14 mm	24.2062 mm
memory density	32768 bit	32768 bit	32768 bit	32768 bit
Memory IC Type	DUAL-PORT SRAM	DUAL-PORT SRAM	DUAL-PORT SRAM	DUAL-PORT SRAM
memory width	16	16	16	16
Humidity sensitivity level	3	3	3	1
Number of functions	1	1	1	1
Number of ports	2	2	2	2
Number of terminals	100	100	100	68
word count	2048 words	2048 words	2048 words	2048 words
character code	2000	2000	2000	2000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C
organize	2KX16	2KX16	2KX16	2KX16
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	LFQFP	LFQFP	LFQFP	QCCJ
Encapsulate equivalent code	QFP100,.63SQ,20	QFP100,.63SQ,20	QFP100,.63SQ,20	LDCC68,1.0SQ
Package shape	SQUARE	SQUARE	SQUARE	SQUARE
Package form	FLATPACK, LOW PROFILE, FINE PITCH	FLATPACK, LOW PROFILE, FINE PITCH	FLATPACK, LOW PROFILE, FINE PITCH	CHIP CARRIER
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Peak Reflow Temperature (Celsius)	240	240	240	225
power supply	3.3 V	3.3 V	3.3 V	3.3 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	1.6 mm	1.6 mm	1.6 mm	4.572 mm
Maximum standby current	0.005 A	0.003 A	0.003 A	0.005 A
Minimum standby current	3 V	3 V	3 V	3 V
Maximum slew rate	0.2 mA	0.17 mA	0.165 mA	0.2 mA
Maximum supply voltage (Vsup)	3.6 V	3.6 V	3.6 V	3.6 V
Minimum supply voltage (Vsup)	3 V	3 V	3 V	3 V
Nominal supply voltage (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V
surface mount	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal surface	Tin/Lead (Sn85Pb15)	Tin/Lead (Sn85Pb15)	Tin/Lead (Sn85Pb15)	Tin/Lead (Sn85Pb15)
Terminal form	GULL WING	GULL WING	GULL WING	J BEND
Terminal pitch	0.5 mm	0.5 mm	0.5 mm	1.27 mm
Terminal location	QUAD	QUAD	QUAD	QUAD
Maximum time at peak reflow temperature	20	20	20	30
width	14 mm	14 mm	14 mm	24.2062 mm
Base Number Matches	1	1	1	1
Maker	IDT (Integrated Device Technology)	-	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)

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