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CMMR1-02BK

Description
Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, SOD-123F, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size72KB,2 Pages
ManufacturerCentral Semiconductor
Download Datasheet Parametric View All

CMMR1-02BK Overview

Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, SOD-123F, 2 PIN

CMMR1-02BK Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerCentral Semiconductor
Parts packaging codeSOD
package instructionSOD-123F, 2 PIN
Contacts2
Manufacturer packaging codeSOD-123F
Reach Compliance Codenot_compliant
ECCN codeEAR99
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
JESD-30 codeR-PDSO-F2
JESD-609 codee0
Maximum non-repetitive peak forward current30 A
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Certification statusNot Qualified
Maximum repetitive peak reverse voltage200 V
surface mountYES
Terminal surfaceTIN LEAD
Terminal formFLAT
Terminal locationDUAL
Base Number Matches1
CMMR1 SERIES
SURFACE MOUNT
GENERAL PURPOSE
SILICON RECTIFIER
1.0 AMP, 200 THRU 1000 VOLTS
Central
TM
Semiconductor Corp.
DESCRIPTION:
The Central Semiconductor CMMR1 Series of
High Current Density Rectifiers, in a SOD-123F
surface mount package are designed for all types
of commercial, industrial computer and
automotive applications.
MARKING CODES:
CMMR1-02:
C02F
CMMR1-04:
C04F
CMMR1-06:
C06F
CMMR1-10:
C10F
SOD-123F CASE
MAXIMUM RATINGS:
(TA=25°C unless otherwise noted)
CMMR1 CMMR1
-02
-04
200
200
140
400
400
280
1.0
30
-65 to +150
65
CMMR1 CMMR1
-06
-10
UNITS
600
600
420
1000
1000
700
V
V
V
A
A
°C
°C/W
SYMBOL
Peak Repetitive Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Forward Current (TL=75°C)
Peak Forward Surge Current (8.3ms)
Operating and Storage
Junction Temperature
Typical Thermal resistance
TJ,Tstg
Θ
JA
VRRM
VR
VR(RMS)
IO
IFSM
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
SYMBOL
VF
IR
IR
CJ
TEST CONDITIONS
IF=1.0A
VR=Rated VRRM
VR=Rated VRRM, TA=125°C
VR=4.0V, f=1.0MHz
4.0
MIN
TYP
MAX
1.1
10
50
UNITS
V
μA
μA
pF
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