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30KP43AE3

Description
Trans Voltage Suppressor Diode, 30000W, 43V V(RWM), Unidirectional, 1 Element, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-2
CategoryDiscrete semiconductor    diode   
File Size2MB,4 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Environmental Compliance
Download Datasheet Parametric View All

30KP43AE3 Overview

Trans Voltage Suppressor Diode, 30000W, 43V V(RWM), Unidirectional, 1 Element, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-2

30KP43AE3 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerMicrosemi
package instructionROHS COMPLIANT, PLASTIC PACKAGE-2
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum breakdown voltage52.8 V
Minimum breakdown voltage47.8 V
Breakdown voltage nominal value50.3 V
Shell connectionISOLATED
Maximum clamping voltage71 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak reverse power dissipation30000 W
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation1.61 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage43 V
surface mountNO
technologyAVALANCHE
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
Filter circuit after rectification
Filter circuit after rectification...
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