1003PAB180 datasheet, PDF - EEWORLD Datasheet

1003PAB180: DescriptionSilicon Controlled Rectifier, 1570000mA I(T), 1800V V(DRM),; CategoryAnalog mixed-signal IC Trigger device; File Size293KB，3 Pages; ManufacturerNihon Inter Electronics Corporation; Websitehttp://www.niec.co.jp

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1003PAB180 Overview

Silicon Controlled Rectifier, 1570000mA I(T), 1800V V(DRM),

Parameter Name	Attribute value
package instruction	DISK BUTTON, O-XXDB-X4
Reach Compliance Code	unknown
ECCN code	EAR99
Critical rise rate of minimum off-state voltage	200 V/us
Maximum DC gate trigger current	200 mA
Maximum DC gate trigger voltage	3 V
JESD-30 code	O-XXDB-X4
Maximum leakage current	120 mA
On-state non-repetitive peak current	16000 A
Number of terminals	4
Maximum on-state current	1570000 A
Maximum operating temperature	125 °C
Minimum operating temperature	-45 °C
Package body material	UNSPECIFIED
Package shape	ROUND
Package form	DISK BUTTON
Certification status	Not Qualified
Off-state repetitive peak voltage	1800 V
surface mount	YES
Terminal form	UNSPECIFIED
Terminal location	UNSPECIFIED
Trigger device type	SCR
Base Number Matches	1

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