DG417/418/419
Vishay Siliconix
Precision CMOS Analog Switches
FEATURES
D
D
D
D
D
D
D
"15-V
Analog Signal Range
On-Resistance—r
DS(on)
: 20
W
Fast Switching Action—t
ON
: 100 ns
Ultra Low Power Requirements—P
D
:35 nW
TTL and CMOS Compatible
MiniDIP and SOIC Packaging
44-V Supply Max Rating
BENEFITS
D
Wide Dynamic Range
D
Low Signal Errors and Distortion
D
Break-Before-Make
Switching Action
D
Simple Interfacing
D
Reduced Board Space
D
Improved Reliability
APPLICATIONS
D
D
D
D
D
D
Precision Test Equipment
Precision Instrumentation
Battery Powered Systems
Sample-and-Hold Circuits
Military Radios
Guidance and Control
Systems
D
Hard Disk Drives
DESCRIPTION
The DG417/418/419 monolithic CMOS analog switches were
designed to provide high performance switching of analog
signals. Combining low power, low leakages, high speed, low
on-resistance and small physical size, the DG417 series is
ideally suited for portable and battery powered industrial and
military applications requiring high performance and efficient
use of board space.
high voltage silicon gate (HVSG) process. Break-before-make
is guaranteed for the DG419, which is an SPDT configuration.
An epitaxial layer prevents latchup.
Each switch conducts equally well in both directions when on,
and blocks up to the power supply level when off.
To achieve high-voltage ratings and superior switching
performance, the DG417 series is built on Vishay Siliconix’s
The DG417 and DG418 respond to opposite control logic
levels as shown in the Truth Table.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG417
Dual-In-Line and SOIC
S
NC
GND
V+
1
2
3
4
Top View
8
7
6
5
D
V–
0
IN
V
L
1
ON
OFF
OFF
ON
TRUTH TABLE
Logic
DG417
DG418
Logic “0” =
v
0.8 V, Logic “1” =
w
2.4 V
DG419
Dual-In-Line and SOIC
D
S
1
GND
V+
1
2
3
4
Top View
8
7
6
5
S
2
V–
IN
V
L
TRUTH TABLE DG419
Logic
0
1
SW
1
ON
OFF
SW
2
OFF
ON
Logic “0” =
v
0.8 V, Logic “1” =
w
2.4 V
Document Number: 70051
S-52433—Rev. E, 06-Sep-99
www.vishay.com
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DG417/418/419
Vishay Siliconix
ORDERING INFORMATION
Temp Range
DG417/418
8-Pin Plastic MiniDIP
–40 to 85 C
40 85_C
8-Pin Narrow SOIC
DG417DJ
DG418DJ
DG417DY
DG418DY
DG417AK, DG417AK/883, 5962-90701MPA
DG418AK, DG418AK/883, 5962-90702MPA
Package
Part Number
–55 to 125_C
8-Pin CerDIP
DG419
–40 to 85_C
–55 to 125_C
8-Pin Plastic MiniDIP
8-Pin Narrow SOIC
8-Pin CerDIP
DG419DJ
DG419DY
DG419AK, DG419AK/883, 5962-90703MPA
NOTE: SMD product is dual marked with /883 number.
ABSOLUTE MAXIMUM RATINGS
Voltages Referenced to V–
V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 V
GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V
V
L
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . (GND –0.3 V) to (V+) + 0.3 V
Digital Inputs
a
V
S
, V
D
. . . . . . . . . . . . . . . . . . . . . . . . . . (V–) –2 V to (V+) + 2 V
or 30 mA, whichever occurs first
Current, (Any Terminal) Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA
Current (S or D) Pulsed 1 ms, 10% duty cycle . . . . . . . . . . . . . . . . . . 100 mA
Storage Temperature
(AK Suffix) . . . . . . . . . . . . . . . . . . –65 to 150_C
(DJ, DY Suffix) . . . . . . . . . . . . . . –65 to 125_C
Power Dissipation (Package)
b
8-Pin Plastic MiniDIP
c
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400 mW
8-Pin Narrow SOIC
d
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400 mW
8-Pin CerDIP
e
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600 mW
Notes:
a. Signals on S
X
, D
X
, or IN
X
exceeding V+ or V– will be clamped by internal
diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 6 mW/_C above 75_C
d. Derate 6.5 mW/_C above 75_C
e. Derate 12 mW/_C above 75_C
SCHEMATIC DIAGRAM (TYPICAL CHANNEL)
V+
S
V
L
V–
V
IN
Level
Shift/
Drive
V+
GND
D
V–
FIGURE 1.
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Document Number: 70051
S-52433—Rev. E, 06-Sep-99
DG417/418/419
Vishay Siliconix
SPECIFICATIONS
a
Test Conditions
Unless Otherwise Specified
Parameter
Analog Switch
Analog Signal Range
e
Drain-Source
On-Resistance
V
ANALOG
r
DS(on)
I
S(off)
Switch
S i h Off
Leakage Current
V+ = 16.5 V, V– = –16.5 V
16 5 V V
16 5
V
D
=
#15.5
V
V
S
=
"15.5
V
DG417
DG418
DG419
DG417
DG418
DG419
I
S
= –10 mA, V
D
=
"12.5
V
V+ = 13.5 V, V– = –13.5 V
Full
Room
Full
Room
Full
Room
Full
Room
Full
Room
Full
Room
Full
20
–0.1
–0.1
–0.1
–0.4
–0.4
–0.25
–20
–0.25
–20
–0.75
–60
–0.4
–40
–0.75
–60
–15
15
35
45
0.25
20
0.25
20
0.75
60
0.4
40
0.75
60
–0.25
–5
–0.25
–5
–0.75
–12
–0.4
–10
–0.75
–12
–15
15
35
45
0.25
5
0.25
5
0.75
12
0.4
10
0.75
12
nA
A
V
W
A Suffix
–55 to 125_C
D Suffix
–40 to 85_C
Symbol
V+ = 15 V, V– = –15 V
V
L
= 5 V, V
IN
= 2.4 V, 0.8 V
f
Temp
b
Typ
c
Min
d
Max
d
Min
d
Max
d
Unit
I
D(off)
Channel On
Leakage Current
L k
C
t
I
D(on)
V+ = 16.5 V, V– = –16.5 V
,
V
S
= V
D
=
"15.5
V
15 5
Digital Control
Input Current
V
IN
Low
Input Current
V
IN
High
I
IL
I
IH
Full
Full
0.005
0.005
–0.5
–0.5
0.5
0.5
–0.5
–0.5
0.5
mA
0.5
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Transition Time
Break-Before-Make
Time Delay
Charge Injection
Source Off
Capacitance
Drain Off Capacitance
Channel On
Capacitance
t
ON
t
OFF
t
TRANS
t
D
Q
C
S(off)
f = 1 MHz, V
S
= 0 V
C
D(off)
C
D(on)
DG417
DG418
DG417
DG418
DG419
R
L
= 300
W
, C
L
= 35 pF
V
S
=
"10
V
See Switching Ti
S S it hi Time
Test Circuit
R
L
= 300
W
, C
L
= 35 pF
V
S1
=
"10
V
V
S2
=
#10
V
R
L
= 300
W
, C
L
= 35 pF
V
S1
= V
S2
=
"10
V
C
L
= 10 nF, V
gen
= 0 V, R
gen
= 0
W
DG417
DG418
DG417
DG418
DG419
Room
Full
Room
Full
Room
Full
Room
Room
Room
Room
Room
Room
13
60
8
8
30
35
5
100
60
175
250
145
210
175
250
5
pC
175
250
145
210
175
250
ns
DG419
pF
pF
,
f = 1 MHz, V
S
= 0 V
Power Supplies
Positive Supply
Current
Negative Supply
Current
Logic Supply Current
Ground Current
I+
I–
I
L
I
GND
V
16 5
V+ = 16 5 V V– = –16.5 V
16.5 V, V
V
IN
= 0 or 5 V
Room
Full
Room
Full
Room
Full
Room
Full
0.001
–0.001
0.001
–0.000
1
–1
–5
1
5
–1
–5
–1
–5
1
5
–1
–5
1
5
A
mA
1
5
Document Number: 70051
S-52433—Rev. E, 06-Sep-99
www.vishay.com
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FaxBack 408-970-5600
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DG417/418/419
Vishay Siliconix
SPECIFICATIONS
a
FOR UNIPOLAR SUPPLIES
Test Conditions
Unless Otherwise Specified
Parameter
Analog Switch
Analog Signal Range
e
Drain-Source
On-Resistance
V
ANALOG
r
DS(on)
I
S
= –10 mA, V
D
= 3.8 V
V+ = 10.8 V
Full
Room
40
0
12
0
12
V
W
A Suffix
–55 to 125_C
D Suffix
–40 to 85_C
Symbol
V+
V = 12 V V = 0 V
V, V–
V
L
= 5 V, V
IN
= 2.4 V, 0.8 V
f
Temp
b
Typ
c
Min
d
Max
d
Min
d
Max
d
Unit
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Break-Before-Make
Time Delay
Charge Injection
t
ON
t
OFF
t
D
Q
R
L
= 300
W
, C
L
= 35 p , V
S
= 8 V
pF,
S S it hi Ti
See Switching Time T t Circuit
Test Ci it
R
L
= 300
W
, C
L
= 35 pF
DG419
Room
Room
Room
Room
110
40
60
5
pC
ns
C
L
= 10 nF, V
gen
= 0 V, R
gen
= 0
W
Power Supplies
Positive Supply
Current
Negative Supply
Current
Logic Supply Current
Ground Current
I+
I–
I
L
I
GND
V+ 13.2 V,
V = 13 2 V V
L
= 5 25 V
5.25
V
IN
= 0 or 5 V
Room
Room
Room
Room
0.001
–0.001
0.001
–0.001
mA
A
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25_C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f.
V
IN
= input voltage to perform proper function.
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Document Number: 70051
S-52433—Rev. E, 06-Sep-99
DG417/418/419
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
r
DS(on)
vs. V
D
and Supply Voltage
I
D
= –10 mA
40
30
"8
V
30
"10
V
"12
V
20
"15
V
r DS(on)(
W
)
r DS(on)(
W
)
25_C
–55_C
10
"5
V
T
A
= 125_C
50
40
r
DS(on)
vs. Temperature
20
"20
V
10
0
–20
–15
–10
–5
0
5
10
15
20
0
–15
–10
–5
0
5
10
15
V
D
– Drain Voltage (V)
V
D
– Drain Voltage (V)
Leakage Currents vs. Analog Voltage
30
V+ = 15 V
V– = –15 V
V
L
= 5 V
DG417/418: I
D(off)
, I
S(off)
DG419: I
S(off)
100
0
Q (pC)
I (pA)
200
Drain Charge Injection
V+ = 16.5 V
V– = –16.5 V
V
L
= 5 V
V
IN
= 0 V
C
L
= 10 nF
1 nF
20
150
10
500 pF
50
–10
DG417/418: I
D(on)
DG419: I
D(off)
, I
D(on)
0
100 pF
–20
–30
–15
–10
–5
0
5
10
15
–50
–15
–10
–5
0
5
10
15
V
D
or V
S
– Drain or Source Voltage (V)
V
S
– Source Voltage (V)
Input Switching Threshold vs. Supply Voltages
3.5
3.0
2.5
V TH (V)
2.0
1.5
1.0
0.5
0
(V+)
5
10
15
20
25
30
35
40
V
L
= 5 V
V
L
= 7 V
Document Number: 70051
S-52433—Rev. E, 06-Sep-99
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FaxBack 408-970-5600
4-5
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