FHT3357 datasheet, PDF - EEWORLD Datasheet

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FHT3357: DescriptionRF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, SOT-89, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size86KB，1 Pages; ManufacturerFenghua (HK) Electronics Ltd.

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FHT3357 Overview

RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, SOT-89, 3 PIN

FHT3357 Parametric

Parameter Name	Attribute value
Maker	Fenghua (HK) Electronics Ltd.
Parts packaging code	SOT-89
package instruction	SMALL OUTLINE, R-PSSO-F3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	LOW NOISE
Maximum collector current (IC)	0.1 A
Collector-based maximum capacity	1 pF
Collector-emitter maximum voltage	12 V
Configuration	SINGLE
highest frequency band	ULTRA HIGH FREQUENCY BAND
JESD-30 code	R-PSSO-F3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	SINGLE
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	6500 MHz
Base Number Matches	1

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RF Transistors

DESCRIPTION & FEATURES

概述及特點

High Frequency Low Noise Amplifier

高頻½雜訊放大

PIN ASSIGNMENT

引腳說明

PIN NAME

FUNCTION

PIN NUMBER

引腳序號

管腳符號

功½

SOT-89

B

1

BASE

C

2

COLLECTOR

E

3

EMITTER

MAXIMUM RATINGS(T

a

=25℃)

最大額定值

CHARACTERISTIC

特性參數

Symbol

符號

Collector-Base Voltage

集電極-基極電壓

V

CBO

Collector-Emitter Voltage

集電極-發射極電壓

V

CEO

Emitter-Base Voltage

發射極-基極電壓

V

EBO

Collector Current—Continuous

集電極電流-連續

I

C

THERMAL CHARACTERISTICS

熱特性

CHARACTERISTIC

特性參數

Symbol

符號

Collector Power Dissipation

集電極耗散功率

P

c

T

j

,

Junction and Storage Temperature結溫和儲存溫度

T

stg

DEVICE MARKING

打標

h

FE

（1）FHT3356R23=R23（50~100）

，FHT3356R24=R24（80~160）

，

FHT3356R25=R25（125~250）

FHT3357

SOT-89

Rating

額定值

20

12

3.0

100

Max

最大值

1.2

150，

-55 ~150

Unit

單½

Vdc

mAdc

Unit

單½

W

℃

ELECTRICAL CHARACTERISTICS

電特性

(T

A

=25℃ unless otherwise noted

如無特殊說明，溫度為

25℃)

Symbol

Test Condition

Characteristic

特性參數

符號

測試條件

Collector Cutoff Current

V

CB

=10V，I

E

=0

I

CBO

集電極截止電流

Emitter Cutoff Current

V

EB

=1V, I

C

=0

I

EBO

發射極截止電流

Collector-Emitter Breakdown Voltage

Min

最小值

—

12

20

3.0

50

—

Type

典型值

—

120

6.5

0.65

9

1.1

1.8

Max

最大值

1.0

—

300

—

1.0

—

3.0

Unit

單½

µA

V

—

GH

Z

pF

dB

集電極-發射極擊穿電壓

Collector- Base Breakdown Voltage

V

(BR)CEO

V

(BR)CBO

V

(BR)EBO

h

FE

f

T

C

re

|S

21e

|

2

NF

I

C

=1.0mA

I

C

=10µA

I

E

=10µA

V

CE

=10V,I

C

=20mA

V

CE

=10V,I

C

=20mA

V

CB

=10V，I

E

=0,

f=1MH

Z

V

CE

=10V，I

C

=20mA,

f=1.0GH

Z

V

CE

=10V，I

C

=7mA,

f=1.0GH

Z

V

CE

=10V，I

C

=40mA,

f=1.0GH

Z

集電極-基極擊穿電壓

Emitter-Base Breakdown Voltage

發射極-基極擊穿電壓

DC Current Gain

直流電流增益

Transition Frequency

特微頻率

Feed-Back Capacitance

回饋電容

Insertion Power Gain

插入功率增益

Nose Factor雜訊係數

1

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Shortcut: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

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