FINAL
Am29F016
16 Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only,
Sector Erase Flash Memory
DISTINCTIVE CHARACTERISTICS
s
5.0 Volt
±
10% for read and write operations
— Minimizes system level power requirements
s
Compatible with JEDEC-standards
— Pinout and software compatible with
single-power-supply Flash
— Superior inadvertent write protection
s
48-pin TSOP pinout
s
Minimum 100,000 write/erase cycles
guaranteed
s
High performance
— 90 ns maximum access time
s
Sector erase architecture
— Uniform sectors of 64 Kbytes each
— Any combination of sectors can be erased.
Also supports full chip erase
s
Group sector protection
— Hardware method that disables any combina-
tion of sector groups from write or erase opera-
tions (a sector group consists of 4 adjacent
sectors of 64 Kbytes each)
s
Embedded Erase Algorithms
— Automatically pre-programs and erases the
chip or any sector
s
Embedded Program Algorithms
Advanced
Micro
Devices
— Automatically programs and verifies data at
specified address
s
Data
Polling and Toggle Bit feature for
detection of program or erase cycle
completion
s
Ready/Busy output (RY/BY)
— Hardware method for detection of program or
erase cycle completion
s
Erase Suspend/Resume
— Supports
reading or programming
data to a
sector not being erased
s
Low power consumption
— 40 mA maximum active read current
— 60 mA maximum program/erase current
s
Enhanced power management for standby
mode
— <1
µA
typical standby current
— Standard access time from standby mode
s
Hardware
RESET
pin
— Resets internal state machine to the read mode
GENERAL DESCRIPTION
The Am29F016 is a 16 Mbit, 5.0 Volt-only Flash memory
organized as 2 Megabytes of 8 bits each. The 2 Mbytes
of data is divided into 32 sectors of 64 Kbytes for flexible
erase capability. The 8 bits of data will appear on
DQ0–DQ7. The Am29F016 is offered in a 48-pin TSOP
package. This device is designed to be programmed
in-system with the standard system 5.0 Volt VCC supply.
12.0 Volt VPP is not required for program or erase opera-
tions. The device can also be reprogrammed in stan-
dard EPROM programmers.
The standard Am29F016 offers access times of 90 ns,
120 ns, and 150 ns allowing operation of high-speed
microprocessors without wait states. To eliminate bus
contention the device has separate chip enable (CE),
write enable (WE), and output enable (OE) controls.
The Am29F016 is entirely command set compatible with
the JEDEC single-power-supply Flash standard. Com-
mands are written to the command register using
standard microprocessor write timings. Register con-
tents serve as input to an internal state-machine which
controls the erase and programming circuitry. Write
cycles also internally latch addresses and data needed
for the programming and erase operations. Reading
data out of the device is similar to reading from 12.0 Volt
Flash or EPROM devices.
1-232
Publication#
18805
Rev.
C
Amendment
/0
Issue Date:
November 1995
AMD
GENERAL DESCRIPTION (continued)
The Am29F016 is programmed by executing the pro-
gram command sequence. This will invoke the Embed-
ded Program Algorithm which is an internal algorithm
that automatically times the program pulse widths and
verifies proper cell margin. Erase is accomplished by
executing the erase command sequence. This will in-
voke the Embedded Erase Algorithm which is an inter-
nal algorithm that automatically preprograms the array if
it is not already programmed before executing the erase
operation. During erase, the device automatically times
the erase pulse widths and verifies proper cell margin.
This device also features a sector erase architecture.
This allows for sectors of memory to be erased and
reprogrammed without affecting the data contents of
other sectors. A sector is typically erased and verified
within one second. The Am29F016 is erased when
shipped from the factory.
The Am29F016 device also features hardware sector
group protection. This feature will disable both program
and erase operations in any combination of eight sector
groups of memory.
A sector group consists of four adja-
cent sectors grouped in the following pattern: sectors
0–3, 4–7, 8–11, 12–15, 16–19, 20–23, 24–27, and
28–31.
AMD has implemented an Erase Suspend feature that
enables the user to put erase on hold for any period of
time to read data from, or program data to, a sector that
was not being erased. Thus, true background erase can
be achieved.
The device features single 5.0 Volt power supply opera-
tion for both read and write functions. Internally gener-
ated and regulated voltages are provided for the
program and erase operations. A low VCC detector auto-
matically inhibits write operations during power transi-
tions. The end of program or erase is detected by the
RY/BY pin,
Data
Polling of DQ7, or by the Toggle Bit I
(DQ6). Once the end of a program or erase cycle has
been completed, the device automatically resets to the
read mode.
The Am29F016 also has a hardware
RESET
pin. When
this pin is driven low, execution of any Embedded Pro-
gram Algorithm or Embedded Erase Algorithm will be
terminated. The internal state machine will then be reset
into the read mode. The
RESET
pin may be tied to the
system reset circuitry. Therefore, if a system reset
occurs during the Embedded Program Algorithm or
Embedded Erase Algorithm, the device will be automati-
cally reset to the read mode and will have erroneous
data stored in the address locations being operated on.
These locations will need re-writing after the Reset.
Resetting the device will enable the system’s
microprocessor to read the boot-up firmware from the
Flash memory.
AMD’s Flash technology combines years of Flash
memory manufacturing experience to produce the
highest levels of quality, reliability and cost effective-
ness. The Am29F016 memory electrically erases all
bits within a sector simultaneously via Fowler-Nordheim
tunneling. The bytes are programmed one byte at a
time using the EPROM programming mechanism of hot
electron injection.
Flexible Sector-Erase Architecture
Thirty two 64 Kbyte sectors
8 sector groups each of which consists of 4 adja-
cent sectors in the following pattern: sectors 0–3,
4–7, 8–11, 12–15, 16–19, 20–23, 24–27, and
28–31.
Individual-sector or multiple-sector erase capability
Sector group protection is user-definable
SA31
SA30
SA29
SA28
64 Kbyte
64 Kbyte
64 Kbyte
64 Kbyte
1FFFFFh
1EFFFFh
1DFFFFh
1CFFFFh
1BFFFFh
1AFFFFh
19FFFFh
18FFFFh
17FFFFh
16FFFFh
15FFFFh
14FFFFh
13FFFFh
12FFFFh
32 Sectors Total
11FFFFh
10FFFFh
0FFFFFh
0EFFFFh
0DFFFFh
0CFFFFh
0BFFFFh
0AFFFFh
09FFFFh
08FFFFh
07FFFFh
06FFFFh
05FFFFh
04FFFFh
SA3
SA2
SA1
SA0
64 Kbyte
64 Kbyte
64 Kbyte
64 Kbyte
03FFFFh
02FFFFh
01FFFFh
00FFFFh
000000h
18805C-1
Sector
Group
7
Sector
Group
0
Am29F016
1-233
Power technology
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