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1N2366B

Description
Rectifier Diode, 1 Phase, 1 Element, 10A, 1600V V(RRM), Silicon, DO-4,
CategoryDiscrete semiconductor    diode   
File Size383KB,4 Pages
ManufacturerSemitronics Corp.
Download Datasheet Parametric View All

1N2366B Overview

Rectifier Diode, 1 Phase, 1 Element, 10A, 1600V V(RRM), Silicon, DO-4,

1N2366B Parametric

Parameter NameAttribute value
Reach Compliance Codeunknow
applicationPOWER
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)2 V
JEDEC-95 codeDO-4
JESD-30 codeO-MUPM-D1
Maximum non-repetitive peak forward current25 A
Number of components1
Phase1
Number of terminals1
Maximum operating temperature150 °C
Maximum output current10 A
Package body materialMETAL
Package shapeROUND
Package formPOST/STUD MOUNT
Certification statusNot Qualified
Maximum repetitive peak reverse voltage1600 V
surface mountNO
Terminal formSOLDER LUG
Terminal locationUPPER
Base Number Matches1
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