®
BAR 18
BAS70-04 06
SMALL SIGNAL SCHOTTKY DIODES
K
N.C.
A
A1
K2
K1
A2
BAR18
BAS70-04
K
A1
A
K1
A2
K2
DESCRIPTION
Low turn-on and high breakdown voltage diodes in-
tended for ultrafast switching and UHF detectors in
hybrid micro circuits.
BAS70-05
SOT-23
(Plastic)
BAS70-06
ABSOLUTE RATINGS
(limiting values)
Symbol
V
RRM
I
F
P
tot
T
stg
Tj
T
L
Parameter
Repetitive peak reverse voltage
Continuous forward current
Power dissipation (note 1)
Maximum storage temperature range
Maximum operating junction temperature *
Maximum temperature for soldering during 10s
Tamb = 25°C
Value
70
70
250
- 65 to +150
150
260
Unit
V
mA
mW
°C
°C
°C
Note 1:
for double diodes, Ptot is the total dissipation of both diodes
* :
dPtot
1
thermal runaway condition for a diode on its own heatsink
<
dTj
Rth
(
j
−
a
)
THERMAL RESISTANCE
Symbol
R
th (j-a)
Parameter
Junction to ambient (*)
Value
500
Unit
°C/W
(*) Mounted on epoxy board with recommended pad layout.
December 2001 - Ed: 3A
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BAR 18 / BAS70-04 06
ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS
Symbol
V
BR
V
F
*
I
R
**
Pulse test:
Test Conditions
Tj = 25°C
Tj = 25°C
Tj = 25°C
I
R
= 10µA
I
F
= 1mA
V
R
= 50V
Min.
70
Typ.
Max.
Unit
V
410
200
mV
nA
* tp = 380µs,
δ
< 2%
** tp = 5 ms,
δ
< 2%
DYNAMIC CHARACTERISTICS
Symbol
C
τ*
Test Conditions
Tj = 25°C V
R
= 0V
Tj = 25°C
I
F
= 5mA
F = 1MHz
Krakauer Method
Min.
Typ.
Max.
2
100
Unit
pF
ps
* Effective carrier life time.
Fig. 1-1:
Forward voltage drop versus forward
current (low level).
IFM(A)
2.0E-2
1.8E-2
1.6E-2
1.4E-2
1.2E-2
1.0E-2
8.0E-3
6.0E-3
4.0E-3
2.0E-3
0.0E+0
0.0
Fig. 1-2:
Forward voltage drop versus forward
current (high level).
IFM(A)
7E-2
Tj=100°C
Typical values
Tj=100°C
Typical values
1E-2
Tj=25°C
Maximum values
Tj=25°C
Maximum values
Tj=25°C
Typical values
1E-3
Tj=25°C
Typical values
VFM(V)
0.2
0.4
0.6
0.8
1.0
1.2
VFM(V)
1E-4
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
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BAR 18 / BAS70-04 06
Fig. 2:
Reverse leakage current versus reverse
voltage applied (typical values).
IR(µA)
1E+1
Tj=100°C
Fig. 3:
Reverse leakage current versus junction
temperature (typical values)
IR(µA)
5E+2
1E+2
VR=70V
1E+0
1E+1
1E-1
Tj=25°C
1E+0
1E-1
1E-2
VR(V)
1E-3
0
5 10 15 20 25 30 35 40 45 50 55 60 65 70
Tj(°C)
1E-2
0
25
50
75
100
125
150
Fig. 4:
Junction capacitance versus reverse voltage
applied (typical values).
C(pF)
2.0
1.0
F=1MHz
Tj=25°C
Fig. 5:
Relative variation of thermal impedance
junction to ambient versus pulse duration (alumine
substrate 10mm*8mm*0.5mm).
Zth(j-a)/Rth(j-a)
1.00
δ
= 0.5
δ
= 0.2
0.10
δ
= 0.1
T
0.1
VR(V)
1
10
100
Single pulse
tp(s)
1E-2
1E-1
1E+0
δ
=tp/T
tp
0.01
1E-3
1E+1
1E+2
Fig. 6:
Thermal resistance junction to ambient ver-
sus copper surface under each lead (Epoxy printed
circuit board FR4, copper thickness: 35µm).
Rth(j-a) (°C/W)
350
300
250
200
S(Cu) (mm²)
150
0
5
10
15
20
25
30
35
40
45
50
P=0.25W
3/4
BAR 18 / BAS70-04 06
PACKAGE MECHANICAL DATA
SOT23 (Plastic)
E
A
DIMENSIONS
REF.
Millimeters
Min.
A
A1
0.89
0
0.3
0.085
2.75
0.85
1.7
1.2
2.1
0.35
0.6 typ.
0.65
Inches
Min.
0.035
0
0.012
0.003
0.108
0.033
0.067
0.047
0.083
0.014
e
B
e1
D
Max.
1.4
0.1
0.51
0.18
3.04
1.05
2.1
1.6
2.75
Max.
0.055
0.004
0.02
0.007
0.12
0.041
0.083
0.063
0.108
0.026
S
A1
B
c
D
L
e
e1
E
H
L
c
H
0.024 typ.
S
FOOTPRINT DIMENSIONS
0.9
0.035
0.9
0.035
1.1
0.043
2.35
0.92
1.9
0.075
1.45
0.037
mm
inch
0.9
0.035
Ordering type
BAR18
BAS70-04
BAS70-05
BAS70-06
s
Marking
D76
D96
D97
D98
1.1
0.043
Package
SOT-23
SOT-23
SOT-23
SOT-23
Weight
0.01g
0.01g
0.01g
0.01g
Base qty
3000
3000
3000
3000
Delivery mode
Tape & reel
Tape & reel
Tape & reel
Tape & reel
Epoxy meets UL94,V0
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use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
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approval of STMicroelectronics.
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© 2001 STMicroelectronics - Printed in Italy - All rights reserved.
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