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DATA SHEET
dbook, halfpage
M3D302
BZA408B
Quadruple bidirectional ESD
transient voltage suppressor
Product data sheet
Supersedes data of 1998 Jun 05
1998 Oct 15
NXP Semiconductors
Product data sheet
Quadruple bidirectional ESD transient
voltage suppressor
FEATURES
•
ESD rating >15 kV, according to IEC1000-4-2
•
SOT457 surface mount package
•
Non-clamping range:
−5
V to +5 V
•
Channel separation: >70 dB
•
Low reverse current: <100 nA
•
Low diode capacitance: <75 pF.
APPLICATIONS
•
Protection of equipment, connected to data and
transmission lines, against voltage surges caused by
electrostatic discharge e.g:
– Computers and peripherals
– Audio and video equipment
– Communication systems
– Medical equipment
– Portable electronics.
DESCRIPTION
4-bit wide monolithic bidirectional ESD transient voltage
suppressor in a six lead SOT457 (SC-74) package.
1
Top view
2
3
1
handbook, halfpage
BZA408B
PINNING
PIN
1
2, 5
3
4
6
cathode 1
ground
cathode 2
cathode 3
cathode 4
DESCRIPTION
6
5
4
5
4
6
2
3
MAM409
Marking code:
Z8.
Fig.1 Simplified outline (SOT457) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
−
−
−65
−65
MIN.
MAX.
UNIT
Per diode
(pin 2 and / or 5 connected to ground)
I
ZSM
P
ZSM
T
stg
T
j
non-repetitive peak reverse current
non-repetitive peak power
storage temperature
junction temperature
t
p
= 1 ms; square pulse; see Fig.2
t
p
= 1 ms; square pulse
2
20
+150
+150
A
W
°C
°C
1998 Oct 15
2
NXP Semiconductors
Product data sheet
Quadruple bidirectional ESD transient
voltage suppressor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
PARAMETER
thermal resistance from junction to soldering point
CONDITIONS
one or more diodes loaded
BZA408B
VALUE
340
UNIT
K/W
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
−
I
test
= 5 mA
t
p
= 1 ms; I
ZSM
= 2 A
V
R
= V
RWM
see Fig.3
V
R
= 0; f = 1 MHz
V
R
= 5 V; f = 1 MHz
α
ch (p to p)
Note
1.
α
ch (p to p)
is measured as follows: a
−7
dBs sinewave of 400 Hz is connected to e.g. pin 6 and a
−7
dBs sinewave of
1 kHz to pin 1. The 1 kHz signal of pin 1 is measured on pin 6 by means of a spectrum analyser with an input
impedance of 1 MΩ. So
α
ch (p to p)
equals the 1 kHz level on pin 1 minus the 1 kHz level on pin 6. For the 400 Hz
signal the same measurement is done in the opposite way.
pin to pin channel separation
note 1; see Fig.4
−
−
70
75
55
−
pF
pF
dB
5.5
−
−
MIN.
MAX.
UNIT
Per diode
(pin 2 and / or 5 connected to ground)
V
RWM
V
R
V
ZSM
I
R
C
d
working reverse voltage
reverse voltage
non-repetitive peak reverse voltage
reverse current
diode capacitance
5
−
10
100
V
V
V
nA
1998 Oct 15
3
NXP Semiconductors
Product data sheet
Quadruple bidirectional ESD transient
voltage suppressor
GRAPHICAL DATA
BZA408B
handbook, halfpage
10
MGR557
handbook, halfpage
80
MGR558
IZSM
(A)
Cd
(pF)
60
1
40
10
−1
10
−2
10
−1
20
1
tp (ms)
10
0
1
2
3
4
VR (V)
5
T
j
= 25
°C;
f = 1 MHz.
Fig.2
Maximum non-repetitive peak reverse
current as a function of pulse time.
Fig.3
Diode capacitance as a function of reverse
voltage; typical values.
handbook, full pagewidth
coaxial cable with
SMB connector
SPECTRUM
ANALYZER
1 MΩ
SIGNAL
GENERATOR
600
Ω
f = 1 kHz
−7
dBs
1
DUT
6
SIGNAL
GENERATOR
600
Ω
f = 400 Hz
−7
dBs
2
5
3
4
MGR556
Fig.4 Channel separation measurement setup.
1998 Oct 15
4
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