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11DF4TA2B2

Description
Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon
CategoryDiscrete semiconductor    diode   
File Size126KB,1 Pages
ManufacturerNihon Inter Electronics Corporation
Websitehttp://www.niec.co.jp
Download Datasheet Parametric Compare View All

11DF4TA2B2 Overview

Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon

11DF4TA2B2 Parametric

Parameter NameAttribute value
package instructionO-PALF-W2
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeO-PALF-W2
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-40 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Certification statusNot Qualified
Maximum repetitive peak reverse voltage400 V
Maximum reverse recovery time0.03 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1

11DF4TA2B2 Related Products

11DF4TA2B2 11DF4TA2B5
Description Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon
package instruction O-PALF-W2 O-PALF-W2
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
Shell connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode component materials SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE
JESD-30 code O-PALF-W2 O-PALF-W2
Number of components 1 1
Number of terminals 2 2
Maximum operating temperature 150 °C 150 °C
Minimum operating temperature -40 °C -40 °C
Maximum output current 1 A 1 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND
Package form LONG FORM LONG FORM
Certification status Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 400 V 400 V
Maximum reverse recovery time 0.03 µs 0.03 µs
surface mount NO NO
Terminal form WIRE WIRE
Terminal location AXIAL AXIAL
Base Number Matches 1 1
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