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3SK223-UIO-A

Description
UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, MINIMOLD PACKAGE-4
CategoryDiscrete semiconductor    The transistor   
File Size52KB,6 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Environmental Compliance
Download Datasheet Parametric View All

3SK223-UIO-A Overview

UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, MINIMOLD PACKAGE-4

3SK223-UIO-A Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
package instructionSMALL OUTLINE, R-PDSO-G4
Contacts4
Reach Compliance Codeunknown
Other featuresLOW NOISE
ConfigurationSINGLE
Maximum drain current (ID)0.025 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)0.03 pF
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-PDSO-G4
JESD-609 codee6
Number of components1
Number of terminals4
Operating modeDUAL GATE, ENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Minimum power gain (Gp)17 dB
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN BISMUTH
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
3SK223
RF AMPLIFIER FOR CATV TUNER
N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR
4 PINS MINI MOLD
FEATURES
• The Characteristic of Cross-Modulation is good.
CM = 101 dB
µ
TYP. @ f = 470 MHz, G
R
= –30 dB
• Low Noise Figure:
• High Power Gain:
• Enhancement Type.
2.9±0.2
(1.8)
PACKAGE DIMENSIONS
(Unit: mm)
2.8
–0.3
+0.2
+0.2
+0.2
0.4
–0.3
NF2 = 0.9 dB TYP. (f = 55 MHz)
G
PS
= 20 dB TYP. (f = 470 MHz)
0.85 0.95
1.5
–0.3
2
3
0.4
–0.3
0.4
–0.3
0.16
–0.3
+0.2
+0.2
NF1 = 2.2 dB TYP. (f = 470 MHz)
• Suitable for use as RF amplifier in CATV tuner.
• Automatically Mounting:
• Small Package:
Embossed Type Taping
4 Pins Mini Mold
1
+0.2
4
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Drain to Source Voltage
Gate1 to Source Voltage
Gate2 to Source Voltage
Gate1 to Drain Voltage
Gate2 to Drain Voltage
Drain Current
Total Power Dissipation
Channel Temperature
Storage Temperature
*1
R
L
10 kΩ
V
DSX
V
G1S
V
G2S
V
G1D
V
G2D
I
D
P
D
T
ch
T
stg
±8
18
(±10)
*1
18
18
25
200
125
–55 to +125
±8
(±10)
*1
V
V
V
V
mA
mW
°C
°C
1.1
0.8
0.6
–0.3
V
+0.2
–0.3
0 to 0.1
1. Source
2. Drain
3. Gate 2
4. Gate 1
PRECAUTION
Avoid high static voltages or electric fields so that this device would not suffer from any damage due to those voltage
or fields.
Document No. P10575EJ2V0DS00 (2nd edition)
(Previous No. TD-2268)
Date Published August 1995 P
Printed in Japan
+0.2
(1.9)
©
1989
1993
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