EDI8LM32513C20AI datasheet, PDF

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EDI8LM32513C20AI: DescriptionSRAM Module, 512KX32, 20ns, CMOS, PQCC68,; Categorystorage storage; File Size126KB，6 Pages; ManufacturerEDI [Electronic devices inc.]

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EDI8LM32513C20AI Overview

SRAM Module, 512KX32, 20ns, CMOS, PQCC68,

EDI8LM32513C20AI Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	EDI [Electronic devices inc.]
Reach Compliance Code	unknown
Maximum access time	20 ns
Other features	TTL COMPATIBLE INPUT OUTPUT
I/O type	COMMON
JESD-30 code	S-PQCC-J68
JESD-609 code	e0
memory density	16777216 bit
Memory IC Type	SRAM MODULE
memory width	32
Number of functions	1
Number of terminals	68
word count	524288 words
character code	512000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	512KX32
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	QCCJ
Encapsulate equivalent code	LDCC68,1.0SQ
Package shape	SQUARE
Package form	CHIP CARRIER
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Certification status	Not Qualified
Maximum standby current	0.04 A
Minimum standby current	4.75 V
Maximum slew rate	0.72 mA
Maximum supply voltage (Vsup)	5.25 V
Minimum supply voltage (Vsup)	4.75 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	J BEND
Terminal pitch	1.27 mm
Terminal location	QUAD
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

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EDI8LM32513C20AI Related Products

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Description	SRAM Module, 512KX32, 20ns, CMOS, PQCC68,	SRAM Module, 512KX32, 12ns, CMOS, PQCC68,	SRAM Module, 512KX32, 20ns, CMOS, PQCC68,	SRAM Module, 512KX32, 20ns, CMOS, PQCC68,	SRAM Module, 512KX32, 15ns, CMOS, PQCC68,	SRAM Module, 512KX32, 15ns, CMOS, PQCC68,	SRAM Module, 512KX32, 15ns, CMOS, PQCC68,
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Maker	EDI [Electronic devices inc.]	EDI [Electronic devices inc.]	EDI [Electronic devices inc.]	EDI [Electronic devices inc.]	EDI [Electronic devices inc.]	EDI [Electronic devices inc.]	EDI [Electronic devices inc.]
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown
Maximum access time	20 ns	12 ns	20 ns	20 ns	15 ns	15 ns	15 ns
Other features	TTL COMPATIBLE INPUT OUTPUT	TTL COMPATIBLE INPUT OUTPUT	TTL COMPATIBLE INPUT OUTPUT	TTL COMPATIBLE INPUT OUTPUT	TTL COMPATIBLE INPUT OUTPUT	TTL COMPATIBLE INPUT OUTPUT	TTL COMPATIBLE INPUT OUTPUT
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 code	S-PQCC-J68	S-PQCC-J68	S-PQCC-J68	S-PQCC-J68	S-PQCC-J68	S-PQCC-J68	S-PQCC-J68
JESD-609 code	e0	e0	e0	e0	e0	e0	e0
memory density	16777216 bit	16777216 bit	16777216 bit	16777216 bit	16777216 bit	16777216 bit	16777216 bit
Memory IC Type	SRAM MODULE	SRAM MODULE	SRAM MODULE	SRAM MODULE	SRAM MODULE	SRAM MODULE	SRAM MODULE
memory width	32	32	32	32	32	32	32
Number of functions	1	1	1	1	1	1	1
Number of terminals	68	68	68	68	68	68	68
word count	524288 words	524288 words	524288 words	524288 words	524288 words	524288 words	524288 words
character code	512000	512000	512000	512000	512000	512000	512000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	85 °C	70 °C	125 °C	70 °C	85 °C	125 °C	70 °C
Minimum operating temperature	-40 °C	-	-55 °C	-	-40 °C	-55 °C	-
organize	512KX32	512KX32	512KX32	512KX32	512KX32	512KX32	512KX32
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	QCCJ	QCCJ	QCCJ	QCCJ	QCCJ	QCCJ	QCCJ
Encapsulate equivalent code	LDCC68,1.0SQ	LDCC68,1.0SQ	LDCC68,1.0SQ	LDCC68,1.0SQ	LDCC68,1.0SQ	LDCC68,1.0SQ	LDCC68,1.0SQ
Package shape	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE
Package form	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
power supply	5 V	5 V	5 V	5 V	5 V	5 V	5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum standby current	0.04 A	0.04 A	0.04 A	0.04 A	0.04 A	0.04 A	0.04 A
Minimum standby current	4.75 V	4.75 V	4.75 V	4.75 V	4.75 V	4.75 V	4.75 V
Maximum slew rate	0.72 mA	0.8 mA	0.72 mA	0.72 mA	0.8 mA	0.8 mA	0.8 mA
Maximum supply voltage (Vsup)	5.25 V	5.25 V	5.25 V	5.25 V	5.25 V	5.25 V	5.25 V
Minimum supply voltage (Vsup)	4.75 V	4.75 V	4.75 V	4.75 V	4.75 V	4.75 V	4.75 V
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V	5 V
surface mount	YES	YES	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	INDUSTRIAL	COMMERCIAL	MILITARY	COMMERCIAL	INDUSTRIAL	MILITARY	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	J BEND	J BEND	J BEND	J BEND	J BEND	J BEND	J BEND
Terminal pitch	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm
Terminal location	QUAD	QUAD	QUAD	QUAD	QUAD	QUAD	QUAD
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Base Number Matches	1	1	1	1	1	1	1

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