1N4454
Vishay Semiconductors
formerly General Semiconductor
Small-Signal Diode
DO-204AH (DO-35 Glass)
Reverse Voltage
100V
Forward Current
150mA
Features
• Silicon Epitaxial Planar Diode
• Fast switching diode
Mechanical Data
Case:
DO-35 Glass Case
Weight:
approx. 0.13g
Packaging Codes/Options:
F2/10K per Ammo tape (52mm), 50K/box
F3/10K per 13” reel (52mm tape), 50K/box
Dimensions in inches
and (millimeters)
Maximum Ratings and Thermal Characteristics
(T
Parameter
Reverse voltage
Peak reverse voltage
Maximum average rectified current half wave rectification
with resistive load at T
amb
= 25°C and f
≥
50Hz
(1)
Surge forward current at t < 1s and T
j
= 25°C
Maximum power dissipation at T
amb
= 25°C
(1)
Thermal resistance junction to ambient air
(1)
Maximum junction temperature
Storage temperature range
Symbol
V
R
V
RM
I
F(AV)
I
FSM
P
tot
R
θJA
T
J
T
S
A
= 25°C unless otherwise noted)
Limit
75
100
150
500
500
350
175
–65 to +175
Unit
V
V
mA
mA
mW
°C/W
°C
°C
Electrical Characteristics
(T
Parameter
A
= 25°C unless otherwise noted)
Symbol
V
F
I
R
V
(BR)R
C
tot
t
rr
η
v
Min.
–
–
100
–
–
0.45
Max.
1.0
100
5
–
2
4
–
Unit
V
nA
µA
V
pF
ns
–
Maximum forward voltage drop at I
F
= 10mA
Leakage current
at V
R
= 50V
at V
R
= 75V
Reverse breakdown voltage tested with 100µA pulses
Capacitance at V
F
= V
R
= 0V
Reverse recovery time
from I
F
= 10mA to I
R
= 1mA, V
R
= 6V, R
L
= 100Ω
Rectification efficiency at f = 100MHz, V
RF
= 2V
Note:
(1) Valid provided that leads at a distance of 8mm from case are kept at ambient temperature
Document Number 88110
13-May-02
www.vishay.com
1
1N4454
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves
(T
A
= 25°C unless otherwise noted)
mA
10
3
Forward Characteristics
Ω
10
4
Dynamic Forward Resistance
vs Forward Current
10
2
T
J
= 100°C
10
3
T
J
= 25°C
T
J
= 25°C
f = 1.0 kHz
10
r
F
10
2
10
2V
1
10
–
2
I
F
1
10
–1
10
–2
0
1
10
–
1
1
10
10
2
mA
V
F
I
F
mW
1000
Admissible Power Dissipation
vs Ambient Temperature
1.1
Relative Capacitance
vs Reverse Voltage
800
P
tot
C
tot
(V
R
)
1.0
C
tot
(0V)
600
0.9
400
0.8
200
0.7
0
0
100
200°C
0
2
4
6
T
J
= 25°C
f = 1.0MHz
8
10V
T
amb
V
R
nA
10
4
Leakage Current
vs Junction Temperature
A
100
Admissible Repetitive Peak
Forward Current vs Pulse Duration
I v = t
p
/T
T = 1/f
p
I
FRM
10
3
I
R
10
n=0
0.1
0.2
I
FRM
t
p
t
T
10
2
V
R
= 20V
1
10
0.5
1
0
100
200°C
0.1
10
–
5
10
–
4
10
–
3
10
–
2
10
–
1
1
10s
T
j
www.vishay.com
2
t
p
Document Number 88110
13-May-02
Analogue and Mixed Signal
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