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BN1L4L-A

Description
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
CategoryDiscrete semiconductor    The transistor   
File Size123KB,2 Pages
ManufacturerNEC Electronics
Download Datasheet Parametric Compare View All

BN1L4L-A Overview

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon

BN1L4L-A Parametric

Parameter NameAttribute value
MakerNEC Electronics
package instructionIN-LINE, R-PSIP-T3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresBUILT-IN BIAS RESISTOR RATIO IS 0.46
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)90
JESD-30 codeR-PSIP-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum off time (toff)5000 ns
Maximum opening time (tons)1000 ns
Base Number Matches1

BN1L4L-A Related Products

BN1L4L-A
Description Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
Maker NEC Electronics
package instruction IN-LINE, R-PSIP-T3
Reach Compliance Code unknown
ECCN code EAR99
Other features BUILT-IN BIAS RESISTOR RATIO IS 0.46
Maximum collector current (IC) 0.1 A
Collector-emitter maximum voltage 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 90
JESD-30 code R-PSIP-T3
Number of components 1
Number of terminals 3
Package body material PLASTIC/EPOXY
Package shape RECTANGULAR
Package form IN-LINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED
Polarity/channel type PNP
Certification status Not Qualified
surface mount NO
Terminal form THROUGH-HOLE
Terminal location SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED
transistor applications SWITCHING
Transistor component materials SILICON
Maximum off time (toff) 5000 ns
Maximum opening time (tons) 1000 ns
Base Number Matches 1

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