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AP2603Y

Description
P CHANNEL ENHANCEMENT MODE POWER MOSFET
File Size73KB,4 Pages
ManufacturerETC
Download Datasheet View All

AP2603Y Overview

P CHANNEL ENHANCEMENT MODE POWER MOSFET

AP2603Y
Advanced Power
Electronics Corp.
Simple Drive Requirement
Small Package Outline
Surface Mount Device
SOT-26
D
D
D
D
S
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
G
-20V
65mΩ
-5.0A
I
D
Description
D
Advanced Power MOSFETs utilized advanced processing techniques
to achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
The SOT-26 package is universally used for all commercial-industrial
applications.
G
S
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
3
Pulsed Drain Current
1,2
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Rating
-20
±12
-5
-4
-20
2
0.016
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient
3
Max.
Value
62.5
Unit
℃/W
Data and specifications subject to change without notice
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