1N4150T26R datasheet, PDF - EEWORLD Datasheet

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1N4150T26R: Description0.2A, 75V, SILICON, SIGNAL DIODE, DO-35; CategoryDiscrete semiconductor diode; File Size41KB，2 Pages; ManufacturerTexas Instruments; Websitehttp://www.ti.com.cn/

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1N4150T26R Overview

0.2A, 75V, SILICON, SIGNAL DIODE, DO-35

1N4150T26R Parametric

Parameter Name	Attribute value
package instruction	O-LALF-W2
Reach Compliance Code	unknow
ECCN code	EAR99
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1 V
JEDEC-95 code	DO-35
JESD-30 code	O-LALF-W2
Maximum non-repetitive peak forward current	4 A
Number of components	1
Number of terminals	2
Maximum operating temperature	175 °C
Maximum output current	0.2 A
Package body material	GLASS
Package shape	ROUND
Package form	LONG FORM
Maximum power dissipation	0.5 W
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	75 V
Maximum reverse current	0.1 µA
Maximum reverse recovery time	0.006 µs
surface mount	NO
Terminal form	WIRE
Terminal location	AXIAL
Base Number Matches	1

1N4150T26R Related Products

	1N4150T26R	RNC20TA270.1%I	0522710779_V01	0522711779_V01	1N4150T50R	FDLL4150S62Z	FDLL4150D87Z	FDLL4150L99Z
Description	0.2A, 75V, SILICON, SIGNAL DIODE, DO-35	Fixed Resistor, Thin Film, 0.1W, 27ohm, 100V, 0.1% +/-Tol, 5ppm/Cel, Surface Mount, 0805, CHIP	Easy-On FFC/FPC Connector, 1.00mm Pitch, Slider Series, Right-Angle, Bottom Contact, 3.00mm Height, 7 Circuits, Tin-Bismuth Plating	Easy-On FFC/FPC Connector, 1.00mm Pitch, Slider Series, Right-Angle, Bottom Contact, 3.00mm Height, 17 Circuits, Tin-Bismuth Plating	0.2A, 75V, SILICON, SIGNAL DIODE, DO-35	0.2A, 75V, SILICON, SIGNAL DIODE	0.2A, SILICON, SIGNAL DIODE	0.2A, SILICON, SIGNAL DIODE
package instruction	O-LALF-W2	CHIP	-	-	O-LALF-W2	O-LELF-R2	O-LELF-R2	O-LELF-R2
Reach Compliance Code	unknow	not_compliant	-	-	unknown	unknown	unknow	unknow
ECCN code	EAR99	EAR99	-	-	EAR99	EAR99	EAR99	EAR99
Shell connection	ISOLATED	-	-	-	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Configuration	SINGLE	-	-	-	SINGLE	SINGLE	SINGLE	SINGLE
Diode component materials	SILICON	-	-	-	SILICON	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	-	-	-	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	1 V	-	-	-	1 V	1 V	1 V	1 V
JESD-30 code	O-LALF-W2	-	-	-	O-LALF-W2	O-LELF-R2	O-LELF-R2	O-LELF-R2
Maximum non-repetitive peak forward current	4 A	-	-	-	4 A	4 A	4 A	4 A
Number of components	1	-	-	-	1	1	1	1
Number of terminals	2	2	-	-	2	2	2	2
Maximum operating temperature	175 °C	155 °C	-	-	175 °C	175 °C	175 °C	175 °C
Maximum output current	0.2 A	-	-	-	0.2 A	0.2 A	0.2 A	0.2 A
Package body material	GLASS	-	-	-	GLASS	GLASS	GLASS	GLASS
Package shape	ROUND	RECTANGULAR PACKAGE	-	-	ROUND	ROUND	ROUND	ROUND
Package form	LONG FORM	SMT	-	-	LONG FORM	LONG FORM	LONG FORM	LONG FORM
Maximum power dissipation	0.5 W	-	-	-	0.5 W	0.5 W	0.5 W	0.5 W
Certification status	Not Qualified	-	-	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum reverse current	0.1 µA	-	-	-	0.1 µA	0.1 µA	0.1 µA	0.1 µA
Maximum reverse recovery time	0.006 µs	-	-	-	0.006 µs	0.006 µs	0.006 µs	0.006 µs
surface mount	NO	YES	-	-	NO	YES	YES	YES
Terminal form	WIRE	-	-	-	WIRE	WRAP AROUND	WRAP AROUND	WRAP AROUND
Terminal location	AXIAL	-	-	-	AXIAL	END	END	END

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