CMS-S040-040L
S
CHOTTKY
B
ARRIER
D
IODE
Features :
* Extremely low forward volts
* Guard ring protection
* Low reverse leakage current
Chip size(A):
1.016 * 1.016 mm
2
Bond Pad
size(B) :
0.889 * 0.889 mm
2
A
Thickness :
300µm
±
20µm
Metalization :
Anode Ti/Ni/Ag
B
Metalization :
Cathode Ti/Ni/Ag
Electrical Characteristics
Sym.
Spec. Limit
Unit
Maximum Instantaneous Forward Volt
°
at IF : 1.0Amp. 25 C
VF max
0.40
Volt
Minimum Instantaneous Reverse Voltage
°
at IR : 300 uA 25 C
VR min.
43
Volt.
Minimum Non-repetitive Peak Surge current at 25 C
°
IFSM
40
Amp
Storage Temperature
TSTG
-65 to +125
°
C
HsinChu Headquarter
5F, No. 11, Park Avenue II,
Science-Based Industrial Park,
HsinChu City, Taiwan
TEL:
+886-3-567 9979
FAX:
+886-3-567 9909
Sales & Marketing
11F, No. 306-3, SEC. 1, Ta Tung Road,
Hsichih, Taipei Hsien 221, Taiwan
TEL:
FAX:
+886-2-8692 1591
+886-2-8692 1596
2002/04/24
Rev. 1
Champion Microelectronic Corporation
Page 1
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