PD-93858A
IRHM9260
JANSR2N7426
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-254AA)
Product Summary
Part Number
IRHM9260
IRHM93260
Radiation Level
100 kRads(Si)
300 kRads(Si)
RDS(on)
0.160
0.160
I
D
-27A
-27A
QPL Part Number
JANSR2N7426
JANSF2N7426
200V, P-CHANNEL
REF: MIL-PRF-19500/660
RAD-Hard HEXFET TECHNOLOGY
TO-254AA
Description
IR HiRel RAD--Hard HEXFET technology provides high performance
power MOSFETs for space applications. This technology
has over a decade of proven performance and reliability in
satellite applications. These devices have been characterized
for both Total Dose and Single Event Effects (SEE). The
combination of low Rdson and low gate charge reduces
the power losses in switching applications such as DC to
DC converters and motor control. These devices retain all
of the well established advantages of MOSFETs such as
voltage control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
Features
Single Event Effect (SEE) Hardened
Neutron Tolerant
Identical Pre- and Post-Electrical Test Conditions
Repetitive Avalanche Ratings
Dynamic dv/dt Ratings
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Electrically Isolated
Ceramic Package
Light Weight
ESD Rating: Class 3A per MIL-STD-750, Method 1020
Absolute Maximum Ratings
Parameter
I
D
@ V
GS
= -12V, T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Lead Temperature
Weight
For Footnotes refer to the page 2.
1
-27
-17
-108
250
2.0
± 20
500
-27
25
-9.0
-55 to + 150
I
D
@ V
GS
= -12V, T
C
= 100°C Continuous Drain Current
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (0.063 in. /1.6 mm from case for 10s)
9.3 (Typical)
g
2016-07-01
IRHM9260
JANSR2N7426
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
BV
DSS
BV
DSS
/T
J
R
DS(on)
V
GS(th)
Gfs
I
DSS
I
GSS
Q
G
Q
GS
Q
GD
t
d(on)
tr
t
d(off)
t
f
Ls +L
D
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
-200 –––
––– -0.28
–––
-2.0
13
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
V
V/°C
Test Conditions
V
GS
= 0V, I
D
= -1.0mA
Reference to 25°C, I
D
= -1.0mA
––– 0.160
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
6.8
6220
903
150
-4.0
–––
-25
-250
-100
100
300
60
70
37
83
140
172
–––
–––
–––
–––
V
GS
= -12V, I
D
= -17A
V
S
µA
nA
nC
V
DS
= V
GS
, I
D
= -1.0mA
V
DS
= -15V, I
D
= -17A
V
DS
= -160V, V
GS
= 0V
V
DS
= -160V,V
GS
= 0V,T
J
=125°C
V
GS
= -20V
V
GS
= 20V
I
D
= -27A
V
DS
= -100V
V
GS
= -12V
V
DD
= -100V
I
D
= -27A
R
G
= 2.35
V
GS
= -12V
Measured from Drain lead (6mm / 0.25 in
from package) to Source lead (6mm/ 0.25 in
from package) with Source wire internally
bonded from Source pin to Drain pad
ns
nH
V
GS
= 0V
pF
V
DS
= -25V
ƒ = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
-27
-108
-3.3
600
10
A
V
ns
µC
Test Conditions
T
J
= 25°C,I
S
= -27A, V
GS
= 0V
T
J
= 25°C,I
F
= -27A,V
DD
≤
-50V
di/dt = -100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Thermal Resistance
Parameter
R
JC
R
CS
R
JA
Junction-to-Case
Case -to-Sink
Junction-to-Ambient (Typical socket mount)
Min.
–––
–––
–––
Typ.
–––
0.21
–––
Max.
0.50
–––
48
Units
°C/W
Footnotes:
Repetitive Rating; Pulse width limited by maximum junction temperature.
DD
= -50V, starting T
J
= 25°C, L =3.3mH, Peak I
L
= -27A, V
GS
= -12V
V
I
SD
-27A, di/dt
-280A/µs, V
DD
-200V, T
J
150°C
Pulse width
300 µs; Duty Cycle
2%
Total Dose Irradiation with V
GS
Bias.
-12 volt V
GS
applied and V
DS
= 0 during irradiation per MIL-STD-750, Method 1019, condition A.
Total Dose Irradiation with V
DS
Bias.
-160 volt V
DS
applied and V
GS
= 0 during irradiation per MlL-STD-750, Method 1019, condition A.
2
2016-07-01
IRHM9260
JANSR2N7426
Radiation Characteristics
Pre-Irradiation
IR HiRel Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance
program at IR Hirel is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose
(per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using
the same drive circuitry and test conditions in order to provide a direct comparison.
Table1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Parameter
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
R
DS(on)
V
SD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Source
On-State Resistance (TO-254AA)
Diode Forward Voltage
100 kRads (Si)
1
Min.
-200
-2.0
–––
–––
–––
–––
–––
–––
Max.
–––
-4.0
-100
100
-25
0.154
0.160
-3.3
300 kRads (Si)
2
Min.
-200
-2.0
–––
–––
–––
–––
–––
–––
Max.
–––
-5.0
-100
100
-25
0.154
0.160
-3.3
V
V
nA
nA
µA
V
V
GS
= 0V, I
D
= -1.0mA
V
DS
= V
GS
, I
D
= -1.0mA
V
GS
= -20V
V
GS
= 20V
V
DS
= -160V, V
GS
= 0V
V
GS
= -12V, I
D
= -17A
V
GS
= -12V, I
D
= -17A
V
GS
= 0V, I
D
= -27A
Units
Test Conditions
1. Part numbers IRHM9260 (JANSR2N7426)
2. Part numbers IRHM93260 (JANSF2N7426)
IR HiRel radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects
(SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
Ion
Cu
Br
LET
(MeV/(mg/cm
2
))
28.0
36.8
Energy
(MeV)
285
305
Range
(µm)
43.0
39.0
V
DS
(V)
@V
GS
=0V
-200
-200
@V
GS
=5V
-200
-200
@V
GS
=10V
-200
-125
@V
GS
=15V
-200
-75
@V
GS
=20V
–––
–––
-250
-200
VDS
-150
-100
-50
0
0
5
10
VGS
15
20
Cu
Br
Fig a.
Typical Single Event Effect, Safe Operating Area
For Footnotes, refer to the page 2.
3
2016-07-01
IRHM9260
JANSR2N7426
Pre-Irradiation
1000
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
BOTTOM -5.0V
TOP
1000
-I
D
, Drain-to-Source Current (A)
-I
D
, Drain-to-Source Current (A)
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
BOTTOM -5.0V
TOP
100
100
-5.0V
20µs PULSE WIDTH
T
J
= 25
°
C
1
10
100
-5.0V
20µs PULSE WIDTH
T
J
= 150
°
C
1
10
100
10
10
-V
DS
, Drain-to-Source Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
1000
Fig 2.
Typical Output Characteristics
2.5
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= -27A
-I
D
, Drain-to-Source Current (A)
2.0
T
J
= 25
°
C
1.5
100
T
J
= 150
°
C
1.0
0.5
10
V DS= -50V
20µs PULSE WIDTH
5
6
7
8
9
10
11
12
0.0
-60 -40 -20
V
GS
= -12V
0
20
40
60
80 100 120 140 160
-V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature
(
°
C)
Fig 3.
Typical Transfer Characteristics
10000
Fig 4.
Normalized On-Resistance Vs. Temperature
20
-V
GS
, Gate-to-Source Voltage (V)
8000
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd ,
C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
I
D
= -27A
16
V
DS
= 160V
V
DS
= 100V
V
DS
= 40V
C, Capacitance (pF)
6000
Ciss
12
4000
8
2000
Coss
Crss
1
10
100
4
0
0
FOR TEST CIRCUIT
SEE FIGURE 13
0
50
100
150
200
250
300
-V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
4
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
2016-07-01
IRHM9260
JANSR2N7426
Pre-Irradiation
1000
1000
-I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
100
T
J
= 150
°
C
10
-I
D
, Drain Current (A)
I
100
100us
T
J
= 25
°
C
1
10
1ms
10ms
0.1
0.0
V
GS
= 0 V
1.0
2.0
3.0
4.0
5.0
1
T
C
= 25 ° C
T
J
= 150 ° C
Single Pulse
10
100
1000
-V
SD
,Source-to-Drain Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode Forward Voltage
E
AS
, Single Pulse Avalanche Energy (mJ)
30
Fig 8.
Maximum Safe Operating Area
1200
TOP
BOTTOM
25
1000
ID
-12A
-17A
-27A
-I
D
, Drain Current (A)
20
800
15
600
10
400
5
200
0
0
25
50
75
100
125
150
25
50
75
100
125
150
T
C
, Case Temperature ( °C)
Starting T
J
, Junction Temperature
(
°
C)
Fig 9.
Maximum Drain Current Vs. Case Temperature
Fig 10.
Maximum Avalanche Energy
Vs. Drain Current
1
Thermal Response (Z
thJC
)
D = 0.50
0.20
0.10
0.05
0.02
0.01
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.0001
0.001
0.01
0.1
1
10
0.1
0.01
SINGLE PULSE
(THERMAL RESPONSE)
0.001
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
5
2016-07-01
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