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BC327-16

Description
Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, PLASTIC PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size253KB,3 Pages
ManufacturerMicro Commercial Components (MCC)
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BC327-16 Overview

Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, PLASTIC PACKAGE-3

BC327-16 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeTO-92
package instructionCYLINDRICAL, O-PBCY-T3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)0.8 A
Collector-emitter maximum voltage45 V
ConfigurationSINGLE
Minimum DC current gain (hFE)100
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power dissipation(Abs)0.625 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal transition frequency (fT)260 MHz
VCEsat-Max0.7 V
Base Number Matches1
MCC
Micro Commercial Components
TM
  omponents
20736 Marilla
Street Chatsworth

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$ %    !"#
BC327
BC327-16/25/40
BC328
BC328-16/25/40
PNP
Plastic-Encapsulate
Transistors
TO-92
A
E
Features
Capable of 0.625Watts of Power Dissipation.
Collector-current : -0.8A
Collector-base Voltage :V
CBO
=-50V(BC327) , V
CBO
=-30V(BC328)
Case Material: Molded Plastic.
Classification Rating 94V-0
UL Flammability
Maximum Ratings
Operating temperature : -55 to +150
Storage temperature : -55 to +150
Electrical Characteristics @ 25
Symbol
Parameter
Unless Otherwise Specified
Min
Max
---
-45
-25
---
-50
-30
-5.0
Vdc
Units
Vdc
OFF CHARACTERISTICS
V
(BR)CEO
Collector-Emitter Breakdown Voltage
(I
C
=-10mAdc, I
B
=0)
BC327
BC328
Collector-Base Breakdown Voltage
(I
C
=-100µAdc, I
E
=0)
BC327
BC328
Collector-Emitter Breakdown Voltage
(I
E
=-10µAdc, I
C
=0)
Collector Cutoff Current
(V
CB
=-45Vdc,I
E
=0)
BC327
(V
CB
=-25Vdc,I
E
=0)
BC328
Collector Cutoff Current
BC327
(V
CE
=-40Vdc,I
B
=0)
(V
CE
=-20Vdc,I
B
=0)
BC328
Emitter Cutoff Current
(V
EB
=-4.0Vdc, I
C
=0)
DC Current Gain
(I
C
=-100mAdc, V
CE
=-1.0Vdc)
DC Current Gain
(I
C
=-300mAdc, V
CE
=-1.0Vdc)
Collector-Emitter Saturation Voltage
(I
C
=-500mAdc, I
B
=-50mAdc)
Base-Emitter Saturation Voltage
(I
C
=-500mAdc,I
B
=-50mAdc)
Current-Gain-Bandwidth Product
(V
CE
=5.0V, f=100MHz, I
C
=10mA)
Classification
h
FE(1)
Marking Code
16
100~250
A 011
B
V
(BR)CBO
V
(BR)EBO
I
CBO
---
Vdc
µAdc
C
---
---
---
---
---
-0.1
-0.1
µAdc
-0.2
-0.2
-0.1
I
CEO
I
EBO
µAdc
1
2
3
D
ON CHARACTERISTICS
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE(sat)
100
40
---
---
630
---
-0.7
-1.2
---
---
Vdc
Vdc
1.COLLECTOR
2.BASE
3.EMITTER
G
SMALL SIGNAL CHARACTERISTICS
f
T
260
---
MHz
INCHES
MIN
.170
.170
.550
.010
.130
.010
DIMENSIONS
MM
MIN
4.33
4.30
13.97
0.36
3.30
2.44
hFE CLASSIFICATION
25
160~400
B 001
40
250~630
C 001
DIM
A
B
C
D
E
G
MAX
.190
.190
.590
.020
.160
.104
MAX
4.83
4.83
14.97
0.56
3.96
2.64
NOTE
www.mccsemi.com
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2007/03/01
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